公开(公告)号：US11316486B2

公开(公告)日：2022-04-26

申请号：US16858013

申请日：2020-04-24

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Kazuaki Deguchi

IPC: H03F3/191 ,  H03F3/24 ,  H03F3/195 ,  H03F3/21 ,  H03F1/56 ,  H04B1/04

Abstract: A high frequency circuit includes a transmit terminal and a transmit and receive terminal, a power amplifier that amplifies a high frequency signal inputted from the transmit terminal and outputs the high frequency signal toward the transmit and receive terminal, and an output matching circuit that is positioned on a signal path connecting the power amplifier and the transmit and receive terminal and that optimizes the output load impedance of the power amplifier. The output matching circuit includes a matching circuit coupled to an output terminal of the power amplifier, another matching circuit, and a switch that changes a connection between the matching circuits. The power amplifier and the switch are formed at a single semiconductor IC. The matching circuits are formed outside the semiconductor IC.

公开(公告)号：US11962274B2

公开(公告)日：2024-04-16

申请号：US17401539

申请日：2021-08-13

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Tsutomu Oonaro ,  Masamichi Tokuda ,  Makoto Tabei ,  Kazuaki Deguchi ,  Takayuki Kawano

IPC: H03F1/30 ,  H03F1/02 ,  H03F3/21

CPC classification number: H03F1/301 ,  H03F1/0211 ,  H03F3/21 ,  H03F2200/447 ,  H03F2200/451

Abstract: An amplifier device includes an amplifier including cascade-connected power amplifiers in a plurality of stages and a bias circuit configured to supply bias currents to the amplifier. A bias current supplied to a power amplifier in the first stage of the power amplifiers in the plurality of stages exhibits a positive temperature characteristic. A bias current supplied to a power amplifier in the final stage exhibits a negative temperature characteristic.