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    Power amplifier circuit and semiconductor device
    2.
    发明授权
    Power amplifier circuit and semiconductor device 有权

    公开(公告)号：US11601102B2

    公开(公告)日：2023-03-07

    申请号：US17168618

    申请日：2021-02-05

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Hiroaki Tokuya ,  Hideyuki Sato ,  Fumio Harima ,  Kenichi Shimamoto ,  Satoshi Tanaka ,  Takayuki Kawano ,  Ryoki Shikishima ,  Atsushi Kurokawa

    IPC: H03F1/30 ,  H03F3/24 ,  H01L23/00 ,  H03F3/195

    Abstract: A power amplifier circuit includes a first transistor disposed on a semiconductor substrate; a second transistor disposed on the semiconductor substrate and configured to supply a bias current based on a first current which is a part of a control current to the first transistor; a third transistor disposed on the semiconductor substrate and having a collector configured to be supplied with a second current which is a part of the control current and an emitter configured to output a third current based on the second current; a first bump electrically connected to an emitter of the first transistor and disposed so as to overlap a first disposition area in which the first transistor is disposed in plan view of the semiconductor substrate; and a second bump disposed so as to overlap a second disposition area in which the third transistor is disposed in the plan view.

    Power amplifier circuit
    3.
    发明授权
    Power amplifier circuit 有权

    公开(公告)号：US11456707B2

    公开(公告)日：2022-09-27

    申请号：US16724894

    申请日：2019-12-23

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Shunsuke Kobayashi ,  Takayuki Kawano

    IPC: H03F3/04 ,  H03F1/30 ,  H03F1/02 ,  H03F3/213 ,  H03F3/45 ,  H03F1/32 ,  H04B1/04

    Abstract: A power amplifier circuit includes a power amplifier that amplifies the power of a high frequency signal, a power amplifier temperature detector circuit that includes a temperature detection element, the temperature detection element being thermally coupled with the power amplifier, a bias control signal generator circuit that generates a bias control signal for the power amplifier based on a temperature detection signal outputted from the power amplifier temperature detector circuit, and a regulator circuit that stabilizes the temperature detection signal. The power amplifier, the power amplifier temperature detector circuit, and the regulator circuit are formed in a first integrated circuit, and the bias control signal generator circuit is formed in a second integrated circuit. The substrate material (for example, GaAs) of the first integrated circuit has a higher cutoff frequency than the substrate material (for example, SOI) of the second integrated circuit.

    CONTACT UNIT AND INSPECTION JIG
    5.
    发明申请
    CONTACT UNIT AND INSPECTION JIG 有权
    联系单位和检查大

    公开(公告)号：US20160282386A1

    公开(公告)日：2016-09-29

    申请号：US15077993

    申请日：2016-03-23

    Applicant: Yokowo Co., Ltd. ,  Murata Manufacturing Co., Ltd.

    Inventor： Takahiro Nagata ,  Takeshi Todoroki ,  Takahiro Nakamura ,  Yoshinori Ishikawa ,  Takayuki Kawano ,  Kazuhisa Honma

    IPC: G01R1/067 ,  G01R31/28

    CPC classification number: G01R1/06755 ,  G01R1/0466

    Abstract: A block has a planar portion abutting a back side of a contact region of a flexible substrate, and a recess that is concave with respect to the planar portion. An electronic component mounted on the flexible substrate is located within the recess. When viewed from a direction perpendicular to the planar portion, the recess is located at a position near a power supply bump, except at a position overlapping the power supply bump, or the recess is filled with a filler. The planar portion of the block abuts only the back side of the power supply bump.

    Abstract translation: 块具有邻接柔性基板的接触区域的背面的平面部分和相对于平面部分是凹的凹部。 安装在柔性基板上的电子部件位于凹部内。 当从垂直于平面部分的方向观察时，凹部位于靠近电源凸块的位置处，除了在与电源凸块重叠的位置处，或者凹部填充有填充物。 块的平面部分仅抵靠电源凸块的背面。

    Bias circuit and electronic circuit
    7.
    发明授权
    Bias circuit and electronic circuit 有权

    公开(公告)号：US11558049B2

    公开(公告)日：2023-01-17

    申请号：US17212135

    申请日：2021-03-25

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Hideyo Yamashiro ,  Takayuki Kawano

    IPC: H03K17/60

    Abstract: A bias circuit supplies bias voltage to a linear detector circuit. The bias circuit includes a transistor including a collector terminal, an emitter terminal, and a base terminal; a resistance element having one end connected to the collector terminal and the other end connected to a power line and the base terminal; a resistance element having one end connected to the emitter terminal; a transistor that switches between connection and disconnection between the resistance element and ground; collector voltage extended lines that transmit voltage corresponding to collector voltage as the bias voltage; and a transistor that is arranged on a path of one of the collector voltage extended lines and that switches between connection and disconnection between an output terminal of the linear detector circuit and the collector terminal.

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