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1.发明申请公开(公告)号：US20190260347A1
公开(公告)日：2019-08-22
申请号：US16244143
申请日：2019-01-10
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Tsutomu TAKAI , Koji YAMAMOTO , Hideki IWAMOTO
Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film disposed on the supporting substrate, a low-acoustic-velocity film disposed on the high-acoustic-velocity film, a piezoelectric layer disposed on the low-acoustic-velocity film, and an interdigital transducer electrode disposed on the piezoelectric layer. The acoustic velocity of a bulk wave that propagates through the high-acoustic-velocity film is higher than the acoustic velocity of an elastic wave that propagates through the piezoelectric layer. The acoustic velocity of a bulk wave that propagates through the low-acoustic-velocity film is lower than the acoustic velocity of an elastic wave that propagates through the piezoelectric layer. The high-acoustic-velocity film is composed of SiNx, where x
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公开(公告)号：US20180358950A1
公开(公告)日：2018-12-13
申请号：US16108165
申请日：2018-08-22
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Koji YAMAMOTO , Tsutomu TAKAI , Seiji KAI , Hisashi YAMAZAKI , Yuji MIWA , Takashi YAMANE , Noriyoshi OTA , Atsushi TANAKA
CPC classification number: H03H9/02897 , H03H9/02866 , H03H9/0561 , H03H9/1092 , H03H9/14544 , H03H9/6489
Abstract: An elastic wave device includes a lamination layer film including a piezoelectric thin film on a support substrate. The lamination layer film is not partially present in a region located in an outer side portion of a region where IDT electrodes are provided. A first insulation layer extends from at least a portion of a region where the lamination layer film is not present to an upper portion of the piezoelectric thin film. A wiring electrode has a width of about 6 μm and extends from the upper portion of the piezoelectric thin film to an upper portion of the first insulation layer, and extends onto a section of the first insulation layer in the region.
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公开(公告)号：US20160294354A1
公开(公告)日：2016-10-06
申请号：US15180234
申请日：2016-06-13
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shin SAIJO , Hisashi YAMAZAKI , Koji YAMAMOTO , Seiji KAI , Munehisa WATANABE
CPC classification number: H03H9/14544 , H03H3/08 , H03H9/02574 , H03H9/02992 , H03H9/0514 , H03H9/0542 , H03H9/0552 , H03H9/1014 , H03H9/1071 , H03H9/132 , H03H9/145
Abstract: In an elastic wave device, a multilayer film including a piezoelectric thin film is provided on a support substrate, an interdigital transducer electrode is provided on one surface of the piezoelectric thin film, a wiring electrode is connected to the interdigital transducer electrode, the wiring electrode includes a lead electrode portion and a pad electrode portion, an external connection terminal is located above the pad electrode portion, the external connection terminal is electrically connected to the pad electrode portion, and the external connection terminal is bonded onto the pad electrode portion on the support substrate so that at least the piezoelectric thin film of the multilayer film is not present below the pad electrode portion.
Abstract translation: 在弹性波装置中，在支撑基板上设置包括压电薄膜的多层膜，在压电薄膜的一个表面上设置叉指式换能器电极，将布线电极连接到叉指式换能器电极，布线电极 包括引线电极部分和焊盘电极部分，外部连接端子位于焊盘电极部分的上方，外部连接端子电连接到焊盘电极部分，并且外部连接端子接合到焊盘电极部分上 支撑基板，使得至少多层膜的压电薄膜不存在于焊盘电极部分的下方。
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公开(公告)号：US20220278667A1
公开(公告)日：2022-09-01
申请号：US17750435
申请日：2022-05-23
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Koji YAMAMOTO , Katsuya DAIMON
Abstract: An acoustic wave device includes first and second electrode fingers on a piezoelectric layer, and third and fourth electrode fingers and a plurality of fourth electrode fingers are provided on the piezoelectric layer. A connection section includes second and third busbars. The second busbar is on the piezoelectric layer and is connected to one end of each of the second electrode fingers. The third busbar is on the piezoelectric layer and is connected to one end of each of the third electrode fingers. A stress relaxation layer is between the connection section and the piezoelectric layer. The stress relaxation layer does not extend to any of a gap between each of the first electrode fingers and the second busbar and a gap between each of the fourth electrode fingers and the third busbar in a plan view from a thickness direction of a support substrate.
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公开(公告)号：US20230071909A1
公开(公告)日：2023-03-09
申请号：US17987926
申请日：2022-11-16
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Katsuya DAIMON , Koji YAMAMOTO
IPC: H03H9/25
Abstract: An acoustic wave device includes a piezoelectric substrate and IDT electrodes each including a first pitch portion with a relatively wide electrode finger pitch and a second pitch portion with a relatively narrow electrode finger pitch. A central region is located on a central side in a direction in which electrode fingers extend, and first and second edge regions are located on both sides of the central region. Mass addition films are in the first and second edge regions and include first mass addition films in the first pitch portion and second mass addition films in the second pitch portion. A length of the first mass addition film along an acoustic wave propagation direction is greater than a length of the second mass addition film.
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Patent Agency Ranking
公开(公告)号：US20220182035A1
公开(公告)日：2022-06-09
申请号：US17679403
申请日：2022-02-24
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Katsuya DAIMON , Yasumasa TANIGUCHI , Koji YAMAMOTO
IPC: H03H9/02
Abstract: An acoustic wave device includes a piezoelectric substrate and an IDT electrode on the piezoelectric substrate. The IDT electrode includes first and second electrode fingers. When the propagation direction of acoustic waves is a first direction and the direction orthogonal or substantially orthogonal to the first direction is a second direction, an intersecting region of the IDT electrode includes a central region located toward the middle in the second direction and first and second edge regions on both sides in the second direction of the central region. The first and second electrode fingers include epitaxially grown oriented films in the central region and portions that do not include the oriented films in the first and second edge regions.
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公开(公告)号：US20230045374A1
公开(公告)日：2023-02-09
申请号：US17972605
申请日：2022-10-25
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Koji YAMAMOTO , Katsuya DAIMON
Abstract: An acoustic wave device includes an intermediate layer and a piezoelectric film that are laminated in that order on the support substrate. An interdigital transducer (IDT) electrode is provided on the piezoelectric film. Cavities are provided at least one of a location between the support substrate and the intermediate layer and a location in the intermediate layer.
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公开(公告)号：US20200186128A1
公开(公告)日：2020-06-11
申请号：US16707169
申请日：2019-12-09
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Koji YAMAMOTO , Tsutomu TAKAI , Hideaki TAKAHASHI
Abstract: An acoustic wave device includes a high-acoustic-velocity film, a low-acoustic-velocity film provided on the high-acoustic-velocity film, a piezoelectric layer provided on the low-acoustic-velocity film, and an IDT electrode provided on the piezoelectric layer. An acoustic velocity of bulk waves propagating through the high-acoustic-velocity film is higher than an acoustic velocity of acoustic waves propagating through the piezoelectric layer. An acoustic velocity of bulk waves propagating through the low-acoustic-velocity film is lower than an acoustic velocity of bulk waves propagating through the piezoelectric layer. The low-acoustic-velocity film includes a material including hydrogen atoms.
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公开(公告)号：US20200186119A1
公开(公告)日：2020-06-11
申请号：US16707155
申请日：2019-12-09
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Koji YAMAMOTO , Tsutomu TAKAI , Hideaki TAKAHASHI
Abstract: An acoustic wave device includes a high-acoustic-velocity film, a piezoelectric layer provided directly or indirectly on the high-acoustic-velocity film, an IDT electrode provided on the piezoelectric layer, and a dielectric film provided on the piezoelectric layer to cover the IDT electrode. An acoustic velocity of bulk waves propagating through the high-acoustic-velocity film is higher than an acoustic velocity of acoustic waves propagating through the piezoelectric layer. The dielectric film includes a material including hydrogen atoms.
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公开(公告)号：US20160056789A1
公开(公告)日：2016-02-25
申请号：US14932182
申请日：2015-11-04
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Ryo OTSUBO , Koji YAMAMOTO
CPC classification number: H03H9/02992 , H03H3/02 , H03H3/10 , H03H9/02574 , H03H9/1071 , H03H9/14541
Abstract: An IDT electrode of an elastic wave device includes a first electrode film made of Al or mainly containing Al, a second electrode film with a density larger than that of the first electrode film, an anti-diffusion film which is located between the first electrode film and the second electrode film and which significantly reduces or prevents interdiffusion between the first electrode film and the second electrode film, and a first Ti film located between the first electrode film and the anti-diffusion film, to diffuse a diffusion material into the first electrode film.
Abstract translation: 弹性波装置的IDT电极包括由Al或主要包含Al的第一电极膜，密度大于第一电极膜的第二电极膜，位于第一电极膜之间的防扩散膜 和第二电极膜，并且显着地减少或防止第一电极膜和第二电极膜之间的相互扩散，以及位于第一电极膜和反扩散膜之间的第一Ti膜，以将扩散材料扩散到第一电极 电影。
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