Capacitor
    1.
    发明授权

    公开(公告)号:US11348726B2

    公开(公告)日:2022-05-31

    申请号:US16527170

    申请日:2019-07-31

    Abstract: A capacitor is provided that includes an electrostatic capacitance forming portion with a first electrode/dielectric layer/second electrode structure, and a silicon portion. Moreover, the silicon portion is disposed on at least a part of a side of the electrostatic capacitance forming portion. When the capacitor is viewed in a thickness direction thereof, a region occupied by the silicon portion in a lower portion of the electrostatic capacitance forming portion is 50% or less.

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