CAPACITOR
    6.
    发明申请
    CAPACITOR 有权
    电容器

    公开(公告)号:US20170018368A1

    公开(公告)日:2017-01-19

    申请号:US15204069

    申请日:2016-07-07

    CPC classification number: H01G9/07 H01G9/0029 H01G9/042 H01G9/045 H01G9/055

    Abstract: A capacitor that includes a conductive porous base material; a dielectric layer; and an electrode. The conductive porous base material, the dielectric layer, and the upper electrode are laminated together to constitute an effective part that accumulates charges in the dielectric layer when a voltage is applied between the conductive porous base material and the electrode. The conductive porous base material includes at least one groove having a width of 10 μm or more at ½ of a depth of the at least one groove.

    Abstract translation: 一种电容器,包括导电多孔基材; 电介质层; 和电极。 导电性多孔基材,电介质层和上电极层叠在一起,构成在导电性多孔质基材与电极之间施加电压时在电介质层中蓄积电荷的有效部。 导电性多孔基材包括在至少一个凹槽的深度的1/2处具有10μm以上的宽度的至少一个凹槽。

    CAPACITOR
    7.
    发明申请
    CAPACITOR 审中-公开
    电容器

    公开(公告)号:US20160329158A1

    公开(公告)日:2016-11-10

    申请号:US15213684

    申请日:2016-07-19

    Abstract: A capacitor that includes a porous metal base material, a dielectric layer formed on the porous metal base material, an upper electrode formed on the dielectric layer, a first terminal electrode electrically connected to the porous metal base material, and a second terminal electrode electrically connected to the upper electrode. The porous metal base material includes a high-porosity part and low-porosity parts, and the low-porosity parts are present at a pair of opposed side surfaces of the porous metal base material.

    Abstract translation: 一种电容器,包括多孔金属基材,形成在所述多孔金属基材上的电介质层,形成在所述电介质层上的上电极,与所述多孔金属基材电连接的第一端电极和电连接的第二端电极 到上电极。 多孔金属基材包括高孔隙率部分和低孔隙率部分,并且低孔隙率部分存在于多孔金属基材的一对相对的侧表面。

    Capacitor
    8.
    发明授权

    公开(公告)号:US11348726B2

    公开(公告)日:2022-05-31

    申请号:US16527170

    申请日:2019-07-31

    Abstract: A capacitor is provided that includes an electrostatic capacitance forming portion with a first electrode/dielectric layer/second electrode structure, and a silicon portion. Moreover, the silicon portion is disposed on at least a part of a side of the electrostatic capacitance forming portion. When the capacitor is viewed in a thickness direction thereof, a region occupied by the silicon portion in a lower portion of the electrostatic capacitance forming portion is 50% or less.

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