摘要:
With an automatic layout method, a first line having a first line width is generated in a prescribed direction. A second line having a second line width and extending at an oblique angle with respect to the first line is generated, so that the second line terminates at an end portion of the first line with an overlapped area. One or more VIA patterns are read out of a database according to the shape of the overlapped area. The VIA patterns are placed in the overlapped area, so that one of the VIA patterns is located at the intersection of the center lines of the first and second lines. The VIA pattern is a combination of parallelograms, including squares and rectangles.
摘要:
With an automatic layout method, a first line having a firs line width is generated in a prescribed direction. A second line having a second line width and extending at an oblique angle with respect to the first line is generated, so that the second line terminates at an end portion of the first line with an overlapped area. One or more VIA patterns are read out of a database according to the shape of the overlapped area. The VIA patterns are placed in the overlapped area, so that one of the VIA patterns is located at the intersection of the center lines of the first and second lines. The VIA pattern is a combination of parallelograms, including squares and rectangles.
摘要:
There are disclosed a semiconductor integrated circuit device, a semiconductor integrated circuit wiring method and a cell arranging method, which can reduce delay in a semiconductor integrated circuit and improve noise resistibility, achieve facility of wiring design, and reduce production cost. The present invention forms an X-Y reference wiring grid using wirings of a total of M (M≧2) layers in which an n-th (n≧2) layer wiring intersects orthogonally with a (n−1)-th layer wiring, and forms an oblique wiring grid which intersects with the reference wiring layer to have an angle of 45 degree or 135 degree is formed by a (m+1)-th layer wiring and a (m+2)-th layer wiring which are intersected orthogonally with each other, such that the(m+1)-th layer wiring and(m+2)-th layer wiring in the oblique wiring grid has a wiring pitch of {square root over (2)} times of that of wiring in the reference wiring grid, and also wiring widths of {square root over (2)} times of that of wiring in the reference wiring layer.
摘要:
There are disclosed a semiconductor integrated circuit device, a semiconductor integrated circuit wiring method and a cell arranging method, which can reduce delay in a semiconductor integrated circuit and improve noise resistibility, achieve facility of wiring design, and reduce production cost. The present invention forms an X-Y reference wiring grid using wirings of a total of M (M≧2) layers in which an n-th (n≧2) layer wiring intersects orthogonally with a (n−1)-th layer wiring, and forms an oblique wiring grid which intersects with the reference wiring layer to have an angle of 45 degree or 135 degree is formed by a (m+1)-th layer wiring and a (m+2)-th layer wiring which are intersected orthogonally with each other, such that the (m+1)-th layer wiring and (m+2)-th layer wiring in the oblique wiring grid has a wiring pitch of {square root over ( )}2 times of that of wiring in the reference wiring grid, and also wiring widths of {square root over ( )}2 times of that of wiring in the reference wiring layer.
摘要:
There are disclosed a semiconductor integrated circuit device, a semiconductor integrated circuit wiring method and a cell arranging method, which can reduce delay in a semiconductor integrated circuit and improve noise resistibility., achieve facility of wiring design, and reduce production cost. The present invention forms a X-Y reference wiring grid using wirings of a total of M (M≧2) layers in which an n-th (n≧2) layer wiring intersects orthogonally with a (n−1)-th layer wiring, and forms an oblique wiring grid which intersects with the reference wiring layer to have an angle of 45 degree or 135 degree is formed by a (m+1)-th layer wiring and a (m+2)-th layer wiring which are intersected orthogonally with each other, such that the(m+1)-th layer wiring and(m+2)-th layer wiring in the oblique wiring grid has a wiring pitch of {square root over (2)} times of that of wiring in the reference wiring grid, and also wiring widths of {square root over (2)} times of that of wiring in the reference wiring layer.
摘要:
The present invention provides an noise suppression circuit comprises an internal circuit which has a high and a low level terminals. The low level terminal is connected to a low level power supply (GND) line. The noise suppression circuit further comprises a first transistor in which one main electrode is connected to the high level terminal of the circuit, a bypass capacitor connected between the other main electrode of the first transistor and the low level power supply line, and a second transistor connected between the other main electrode of the first transistor and a high level power supply (VDD) line. The first transistor is conductive when the internal circuit is active, and is not conductive when the internal circuit is inactive. The second transistor is not conductive when the internal circuit is active, and is conductive when the internal circuit is inactive. Moreover, a communication circuit for setting the number of data buses to be newly added to be less than two times a transmission on data, then encoding the data to be sent so as to make the numbers of “0” and “1” in the data to be sent through the data buses equal to each other and accordingly reducing the increase of the number of the data buses to a minimum and thereby suppressing the common phase power supply noise is provided. A communication apparatus comprising the communication circuit is also provided. Furthermore, the bypass capacitor C for noise suppression circuit is formed in an empty space in a ASIC. A polysilicon layer constituting one electrode of the bypass capacitor is formed in the substrate contact region formed between basic cells regularly arranged, each including a plurality of nMOS and pMOS transistors. This bypass capacitor C is connected between the high and the low level power supply lines to reduce the current running through the power supply line to suppress the EMI noise.
摘要:
A noise suppression circuit encompasses an internal circuit, a bypass capacitor, first and second transistors. The internal circuit has high and low level terminals, and the low level terminal is connected to a low level power supply line. The internal circuit is supplied with enable and inverted enable signals. The first transistor has a first control electrode, and one main electrode is connected to the high level terminal. The first control electrode is supplied with the inverted enable signal. The bypass capacitor is connected between the other main electrode of the first transistor and the low level power supply line. The second transistor is connected between the other main electrode of the first transistor and a high level power supply line. The second transistor has a second control electrode supplied with the enable signal. The second transistor is not conductive when the internal circuit is active.
摘要:
A noise suppression circuit encompasses an internal circuit, a bypass capacitor, first and second transistors. The internal circuit has high and low level terminals, and the low level terminal is connected to a low level power supply line. The internal circuit is supplied with enable and inverted enable signals. The first transistor has a first control electrode, and one main electrode is connected to the high level terminal. The first control electrode is supplied with the inverted enable signal. The bypass capacitor is connected between the other main electrode of the first transistor and the low level power supply line. The second transistor is connected between the other main electrode of the first transistor and a high level power supply line. The second transistor has a second control electrode supplied with the enable signal. The second transistor is not conductive when the internal circuit is active.
摘要:
The present invention provides an noise suppression circuit comprises an internal circuit which has a high and a low level terminals. The low level terminal is connected to a low level power supply (GND) line. The noise suppression circuit further comprises a first transistor in which one main electrode is connected to the high level terminal of the circuit, a bypass capacitor connected between the other main electrode of the first transistor and the low level power supply line, and a second transistor connected between the other main electrode of the first transistor and a high level power supply (VDD) line. The first transistor is conductive when the internal circuit is active, and is not conductive when the internal circuit is inactive. The second transistor is not conductive when the internal circuit is active, and is conductive when the internal circuit is inactive. Moreover, a communication circuit for setting the number of data buses to be newly added to be less than two times a transmission on data, then encoding the data to be sent 80 as to make the numbers of “0” and “1” in the data to be sent through the data buses equal to each other and accordingly reducing the increase of the number of the data buses to a minimum and thereby suppressing the common phase power supply noise is provided. A communication apparatus comprising the communication circuit is also provided. Furthermore, the bypass capacitor C for noise suppression circuit is formed in an empty space in a ASIC. A polysilicon layer constituting one electrode of the bypass capacitor is formed in the substrate contact region formed between basic cells regularly arranged, each including a plurality of nMOS and pMOS transistors. This bypass capacitor C is connected between the high and the low level power supply lines to reduce the current running through the power supply line to suppress the EMI noise.
摘要:
A layout method of designing a wiring pattern on a semiconductor integrated circuit chip according to the present invention comprises three steps of omitting a part of or all of a wiring pattern within cells for a plurality of circuit elements for layout results of these predetermined circuit elements to prepare wiring obstruction data (step 1); deciding a specific wiring path connecting between the cells with reference to the prepared wiring obstruction data (step 2); and repositioning of the cell to correct the layout with no design rule violation and no short between this specific wiring path and the wiring pattern within cells (step 3). The pattern layout is performed so that the specific wiring path is wired in the shortest length of wiring path without making a snaking wire path and also uncomplete wiring does not happen to occur.