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公开(公告)号：US20120314525A1
公开(公告)日：2012-12-13
申请号：US13564842
申请日：2012-08-02
Applicant: Myoung-Jin LEE , Jin-Hong AN
Inventor： Myoung-Jin LEE , Jin-Hong AN
CPC classification number: G11C8/08 , G11C11/4076 , G11C11/4085
Abstract: A semiconductor memory device includes a plurality of wordlines and a driver configured to, when an wordline of the plurality of wordlines is activated by an active command, drive at least one non-activated wordline neighboring the activated wordline and remaining non-activated wordlines with different wordline driving voltage levels during a period of time that the activated wordline is driven to a high voltage level.
Abstract translation: 半导体存储器件包括多个字线和驱动器，其被配置为当多个字线的字线被激活命令激活时，驱动与激活的字线相邻的至少一个非激活字线和具有不同的剩余非激活字线 在激活的字线被驱动到高电压电平的时间段内的字线驱动电压电平。
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公开(公告)号：US20120294097A1
公开(公告)日：2012-11-22
申请号：US13564864
申请日：2012-08-02
Applicant: Myoung-Jin LEE , Jin-Hong AN
Inventor： Myoung-Jin LEE , Jin-Hong AN
IPC: G11C7/00
CPC classification number: G11C8/08 , G11C11/4076 , G11C11/4085
Abstract: A semiconductor memory device includes a plurality of wordlines and a driver configured to, when an wordline of the plurality of wordlines is activated by an active command, drive at least one non-activated wordline neighboring the activated wordline and remaining non-activated wordlines with different wordline driving voltage levels during a period of time that the activated wordline is driven to a high voltage level.
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公开(公告)号：US20100046313A1
公开(公告)日：2010-02-25
申请号：US12544807
申请日：2009-08-20
Applicant: Myoung-Jin LEE , Jin-Hong AN
Inventor： Myoung-Jin LEE , Jin-Hong AN
CPC classification number: G11C8/08 , G11C11/4076 , G11C11/4085
Abstract: A semiconductor memory device includes a plurality of wordlines and a driver configured to, when an wordline of the plurality of wordlines is activated by an active command, drive at least one non-activated wordline neighboring the activated wordline and remaining non-activated wordlines with different wordline driving voltage levels during a period of time that the activated wordline is driven to a high voltage level.
Abstract translation: 半导体存储器件包括多个字线和驱动器，其被配置为当多个字线的字线被激活命令激活时，驱动与激活的字线相邻的至少一个非激活字线和具有不同的剩余非激活字线 在激活的字线被驱动到高电压电平的时间段内的字线驱动电压电平。
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公开(公告)号：US20110128795A1
公开(公告)日：2011-06-02
申请号：US12649393
申请日：2009-12-30
Applicant: Myoung-Jin LEE , Hyung-Sik Won , Ki-Myung Kyung , Joong-Ho Lee
Inventor： Myoung-Jin LEE , Hyung-Sik Won , Ki-Myung Kyung , Joong-Ho Lee
CPC classification number: G11C7/02 , G11C7/065 , G11C7/08 , G11C11/4091
Abstract: A sense amplifier prevents a reduction in sensing margin occurring when data forms an island pattern. The sense amplifier includes a first inverter having an input terminal connected to a bit line and an output terminal connected to a bar bit line, and a second inverter having an input terminal connected to the bar bit line and an output terminal connected to the bit line. The first and second inverters are configured to receive a pull-up voltage through different pull-up voltage lines, respectively.
Abstract translation: 当数据形成岛状图案时，读出放大器可防止发生感测余量的减少。 读出放大器包括：第一反相器，其具有连接到位线的输入端和连接到条形位线的输出端;以及第二反相器，具有连接到条形位线的输入端和连接到位线的输出端 。 第一和第二反相器被配置为分别通过不同的上拉电压线接收上拉电压。
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