公开(公告)号：US5858860A

公开(公告)日：1999-01-12

申请号：US795103

申请日：1997-02-06

申请人： Myoung-seob Shim ,  Won-taek Choi ,  Yun-seung Shin

发明人： Myoung-seob Shim ,  Won-taek Choi ,  Yun-seung Shin

IPC分类号： H01L21/316 ,  H01L21/76 ,  H01L21/762

CPC分类号： H01L21/76202 ,  Y10S438/978

摘要： Isolated semiconductor devices are formed by forming field oxide regions in a face of a semiconductor substrate to define active regions therebetween. The field oxide regions extend to above the substrate face and include an oblique surface which extends from above the substrate face to the substrate face. A step reducing region is formed on a respective one of the oblique surfaces of the field oxide regions, extending onto the active regions at the substrate face. The step reducing region can reduce the steepness of the step between the substrate face and the field oxide regions, thereby facilitating further processing and reliability of the semiconductor devices.

摘要翻译： 隔离半导体器件通过在半导体衬底的表面形成场氧化物区域以在其间限定有效区域来形成。 场氧化物区域延伸到衬底面的上方，并且包括从衬底表面上方延伸到衬底面的倾斜表面。 在场氧化物区域的相应一个倾斜表面上形成有延伸到衬底面上的有源区上的阶梯减小区域。 减小栅极区域可以降低衬底面和场氧化物区域之间的台阶的陡度，从而有助于半导体器件的进一步处理和可靠性。

公开(公告)号：US5942803A

公开(公告)日：1999-08-24

申请号：US819601

申请日：1997-03-17

申请人： Myoung-seob Shim ,  Hun-chul Shin ,  Kyung-seok Oh

发明人： Myoung-seob Shim ,  Hun-chul Shin ,  Kyung-seok Oh

IPC分类号： H01L21/28 ,  H01L21/768 ,  H01L23/48

CPC分类号： H01L21/76804 ,  H01L21/76807

摘要： A method for forming an opening in an integrated circuit device with an improved aspect ratio includes the following steps. An inter-insulating layer is formed on a surface of a substrate. A recess having a first width is then formed in the inter-insulating layer. Next, a hole having a second width is formed in the inter-insulating layer at a base of the recess, wherein the first width is greater than the second width. Thus, an opening is formed to have a cross-sectional shape of a step where its upper portion formed by the recess which is wider than its lower portion formed by the hole. Accordingly, open circuits caused by voids formed in the opening in subsequent metal deposition steps may be prevented.

摘要翻译： 在具有改进的纵横比的集成电路器件中形成开口的方法包括以下步骤。 在基板的表面上形成绝缘层。 然后在绝缘层中形成具有第一宽度的凹部。 接下来，在凹部的基部的绝缘层中形成具有第二宽度的孔，其中，第一宽度大于第二宽度。 因此，开口形成为具有由凹部形成的上部比其由孔形成的下部更宽的台阶的截面形状。 因此，可以防止在随后的金属沉积步骤中在开口中形成的空隙引起的开路。

公开(公告)号：US5846596A

公开(公告)日：1998-12-08

申请号：US794929

申请日：1997-02-04

申请人： Myoung-seob Shim ,  Hun-chul Shin

发明人： Myoung-seob Shim ,  Hun-chul Shin

IPC分类号： H01L21/316 ,  H01L21/76 ,  H01L21/762 ,  B05D5/12

CPC分类号： H01L21/76202

摘要： Methods of forming field oxide isolation regions having sloped edges which facilitate uniform step coverage of subsequently patterned metallization, etc. but do not encroach upon semiconductor active regions, include the steps of patterning a first mask on a face of a semiconductor substrate to define an active region thereunder and then forming a pad insulation layer on the face of the substrate and in abutting relation to edges of the first mask. Oxidation resistant spacers are then formed on the edges of the first mask and on the pad insulation layer so that field oxide isolation regions having sloped edges can be formed by growing the pad insulation layer through oxidation so that it extends away from the edges of the first mask and does not undercut the first mask to form parasitic bird's beak oxide extensions. The inclusion of oxidation resistant spacers causes the subsequently formed field oxide isolation regions to have edges which are sloped at low angles of inclination in a direction away from the active region mask instead of being vertical.

摘要翻译： 形成具有倾斜边缘的场氧化物隔离区域的方法，其有助于随后图案化金属化等的均匀步骤覆盖，但不侵占半导体有源区域包括在半导体衬底的表面上构图第一掩模以限定活性 然后在衬底的表面上形成衬垫绝缘层并且与第一掩模的边缘邻接。 然后在第一掩模和焊盘绝缘层的边缘上形成耐氧化间隔物，使得具有倾斜边缘的场氧化物隔离区域可以通过使氧化焊垫绝缘层生长使其远离第一掩模 掩模，并且不会削弱第一个掩模形成寄生鸟的氧化钛延伸。 包含耐氧化间隔物导致随后形成的场氧化物隔离区域具有在远离有源区掩模的方向上以低倾角倾斜的边缘，而不是垂直的边缘。