利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

4 条记录 (耗时 0.045 秒)

    VERTICAL ACCELEROMETER
    2.
    发明申请
    VERTICAL ACCELEROMETER 有权
    垂直加速度计

    公开(公告)号：US20110138913A1

    公开(公告)日：2011-06-16

    申请号：US12783789

    申请日：2010-05-20

    申请人： Chang Han JE

    发明人： Chang Han JE

    IPC分类号： G01P15/125

    CPC分类号： G01P15/125

    摘要： Provided is a vertical accelerometer for measuring acceleration applied perpendicular to a substrate to increase sensitivity thereof. The vertical accelerometer includes a substrate, and a plurality of unit vertical accelerometers, each having a detection mass disposed on the substrate to be rotated by acceleration applied perpendicular to the substrate, and a detection electrode formed at the detection mass. Here, the unit vertical accelerometers are provided to be in contact with the detection electrodes to detect the acceleration through variation in capacitance due to variation in area in which the contacted detection electrodes overlaps each other.

    摘要翻译： 提供了一种用于测量垂直于衬底施加的加速度以增加其灵敏度的垂直加速度计。 垂直加速度计包括基板和多个单元垂直加速度计，每个单元垂直加速度计具有设置在基板上的检测质量，以通过垂直于基板施加的加速度旋转，以及形成在检测质量处的检测电极。 这里，单位垂直加速度计被设置为与检测电极接触，以通过由于接触的检测电极彼此重叠的面积的变化而发生的电容变化来检测加速度。

    THREE-DIMENSIONAL MEMS STRUCTURE AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    THREE-DIMENSIONAL MEMS STRUCTURE AND METHOD OF MANUFACTURING THE SAME 有权
    三维MEMS结构及其制造方法

    公开(公告)号：US20110049651A1

    公开(公告)日：2011-03-03

    申请号：US12853522

    申请日：2010-08-10

    申请人： Chang Han JE

    发明人： Chang Han JE

    IPC分类号： H01L29/84 ,  H01L21/306

    CPC分类号： B81C1/0015

    摘要： Provided are a three-dimensional (3D) MEMS structure and a method of manufacturing the same. The method of manufacturing the 3D MEMS structure having a floating structure includes depositing a first etch mask on a substrate, etching at least two regions of the first etch mask to expose the substrate, and forming at least one step in the etched region, partially etching the exposed region of the substrate using the first etch mask, and forming at least two grooves, depositing a second etch mask on a sidewall of the groove, and performing an etching process to connect lower regions of the at least two grooves to each other, and forming at least one floating structure.

    摘要翻译： 提供一种三维（3D）MEMS结构及其制造方法。 制造具有浮动结构的3D MEMS结构的方法包括在衬底上沉积第一蚀刻掩模，蚀刻第一蚀刻掩模的至少两个区域以暴露衬底，并且在蚀刻区域中形成至少一个步骤，部分蚀刻 使用第一蚀刻掩模的衬底的暴露区域，并且形成至少两个沟槽，在沟槽的侧壁上沉积第二蚀刻掩模，并且执行蚀刻工艺以将至少两个沟槽的下部区域彼此连接， 并形成至少一个浮动结构。

    MEMS MICROPHONE
    4.
    发明申请
    MEMS MICROPHONE 审中-公开
    MEMS麦克风

    公开(公告)号：US20120139066A1

    公开(公告)日：2012-06-07

    申请号：US13252733

    申请日：2011-10-04

    申请人： Chang Han JE ,  Jaewoo Lee ,  Woo Seok Yang ,  Jongdae Kim

    发明人： Chang Han JE ,  Jaewoo Lee ,  Woo Seok Yang ,  Jongdae Kim

    IPC分类号： H01L29/84

    CPC分类号： H04R19/005 ,  H04R1/222 ,  H04R19/04 ,  H04R31/00

    摘要： Disclosed is a micro electro mechanical system (MEMS) microphone including: a substrate; an acoustic chamber formed by processing the substrate; a lower electrode formed on the acoustic chamber and fixed to the substrate; a diaphragm formed over the lower electrode so as to be spaced apart from the lower electrode by a predetermined interval; and a diaphragm discharge hole formed at a central portion of the diaphragm. According to an exemplary embodiment of the present disclosure, attenuation generated by an air layer between the diaphragm and the lower electrode in a MEMS microphone may be effectively reduced, thereby making it possible to obtain high sensitivity characteristics and reduce a time and a cost required for removing a sacrificial layer between the diaphragm and the lower electrode.

    摘要翻译： 公开了一种微机电系统（MEMS）麦克风，包括：基板; 通过处理衬底形成的声学室; 形成在所述声室上并固定到所述基板的下电极; 隔膜，形成在所述下电极上，以与所述下电极隔开预定间隔; 以及形成在隔膜的中心部分处的隔膜排出孔。 根据本公开的示例性实施例，可以有效地减少由MEMS麦克风中的隔膜和下电极之间的空气层产生的衰减，从而使得可以获得高灵敏度特性并减少所需的时间和成本 去除隔膜和下电极之间的牺牲层。