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公开(公告)号:US20180358484A1
公开(公告)日:2018-12-13
申请号:US15579815
申请日:2016-06-03
申请人: NAMICS CORPORATION
发明人: Seiya KONNO
IPC分类号: H01L31/0224 , C03C8/18 , H01B1/22 , H01L21/288 , H01L31/0272
摘要: An electro-conductive paste which includes an electro-conductive powder, a multiple oxide containing tellurium oxide, and an organic vehicle. The electro-conductive paste contains 0.1 parts by weight to 10 parts by weight of the multiple oxide based on 100 parts by weight of the electro-conductive powder, and the content ratio of the tellurium oxide in 100% by weight of the multiple oxide as TeO2 is 3% by weight to 30% by weight.
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公开(公告)号:US20200185548A1
公开(公告)日:2020-06-11
申请号:US16323762
申请日:2017-07-12
申请人: NAMICS CORPORATION
发明人: Seiya KONNO , Noriyuki SAKAI
IPC分类号: H01L31/0224 , H01B1/22 , C03C3/062 , C03C8/04
摘要: Provided is a conductive paste for forming bus bar electrodes having high adhesive strength with respect to a passivation film in a crystalline silicon solar cell without having a detrimental effect on the passivation film so as to affect solar cell properties.The conductive paste is a conductive paste formed on a passivation film of a solar cell, containing: (A) silver particles, (B) an organic vehicle, and (C) glass fit containing TeO2 at 1.0 mol % to 20 mol % and Bi2O3 at 10 mol % to 30 mol %.
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公开(公告)号:US20190194059A1
公开(公告)日:2019-06-27
申请号:US16313039
申请日:2017-06-20
申请人: NAMICS CORPORATION
发明人: Seiya KONNO
IPC分类号: C03C8/18 , H01L31/0224 , H01B1/22 , H01L31/02 , H01L31/068 , H01L31/18
CPC分类号: C03C8/18 , H01B1/22 , H01L31/0201 , H01L31/0224 , H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/50
摘要: Provided is a conductive paste for forming a bus bar electrode having high adhesive strength on a passivation film in a crystalline silicon solar cell without having a detrimental effect on the passivation film so as to affect solar cell properties. The conductive paste is a conductive paste for forming an electrode formed on a passivation film of a solar cell, containing: (A) conductive particles, (B) an organic vehicle, and (C) glass frit containing Bi2O3 at 10 mol % to 30 mol % and SiO2 at 5 mol % to 30 mol %, wherein the conductive paste contains the glass frit at 0.3 parts by weight to 2 parts by weight based on 100 parts by weight of the conductive particles.
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