公开(公告)号：US12127485B2

公开(公告)日：2024-10-22

申请号：US17421418

申请日：2020-01-07

申请人： NANOBRIDGE SEMICONDUCTOR, INC.

发明人： Naoki Banno ,  Munehiro Tada ,  Hideaki Numata ,  Koichiro Okamoto

IPC分类号： H01L27/24 ,  H10B63/00 ,  H10N70/00

CPC分类号： H10N70/023 ,  H10B63/30 ,  H10N70/063 ,  H10N70/8416 ,  H10N70/883

摘要： A switching element that has reduced switching voltage and leakage current and that demonstrates high reliability and low power consumption is achieved as a result of comprising: a first insulation layer in which first wiring mainly consisting of copper is embedded in a first wiring groove that opens upward; a second insulation layer which is formed on an upper surface of the first insulation layer and the first wiring and has an opening that reaches the first insulation layer and the first wiring; a first electrode which is the portion of the first wiring that is exposed from the opening; an oxygen supply layer which is formed on an upper surface of the second insulation layer, generates oxygen plasma during etching to form the opening in the second insulation layer, and remains at least in the vicinity of the opening of the upper surface of the second insulation layer; an ion conducting layer which is formed on the upper surface of the first insulation layer and the first electrode that are exposed from the opening, an inner surface of the opening of the second insulation layer, and an upper surface of the oxygen supply layer; and a second electrode that is formed on an upper surface of the ion conducting layer.