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公开(公告)号：US10971547B2
公开(公告)日：2021-04-06
申请号：US16628099
申请日：2018-07-03
发明人： Munehiro Tada
摘要： This switch element includes a resistance change element, a first transistor, and a second transistor. The resistance change element includes: a metal deposition type resistance change film; a first electrode; and a second electrode. To the second electrode, a source or a drain of the second transistor is connected. The switch element has a first mode and a second mode, when a potential of the second electrode is made higher than that of the first electrode and the resistance change element is switched from the low resistance state to the high resistance state. The gate voltage is greater in the first mode than in the second mode, and a potential difference between the first and second electrodes is smaller in the first mode than in the second mode.
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公开(公告)号：US12127485B2
公开(公告)日：2024-10-22
申请号：US17421418
申请日：2020-01-07
发明人： Naoki Banno , Munehiro Tada , Hideaki Numata , Koichiro Okamoto
CPC分类号： H10N70/023 , H10B63/30 , H10N70/063 , H10N70/8416 , H10N70/883
摘要： A switching element that has reduced switching voltage and leakage current and that demonstrates high reliability and low power consumption is achieved as a result of comprising: a first insulation layer in which first wiring mainly consisting of copper is embedded in a first wiring groove that opens upward; a second insulation layer which is formed on an upper surface of the first insulation layer and the first wiring and has an opening that reaches the first insulation layer and the first wiring; a first electrode which is the portion of the first wiring that is exposed from the opening; an oxygen supply layer which is formed on an upper surface of the second insulation layer, generates oxygen plasma during etching to form the opening in the second insulation layer, and remains at least in the vicinity of the opening of the upper surface of the second insulation layer; an ion conducting layer which is formed on the upper surface of the first insulation layer and the first electrode that are exposed from the opening, an inner surface of the opening of the second insulation layer, and an upper surface of the oxygen supply layer; and a second electrode that is formed on an upper surface of the ion conducting layer.
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