公开(公告)号：US3773899A

公开(公告)日：1973-11-20

申请号：US3773899D

申请日：1971-06-14

Applicant: NAT RES DEV

Inventor： LEWIS T

IPC: C30B11/12 ,  C30B25/00 ,  C01B31/36 ,  B01J17/32

CPC classification number: C30B11/12 ,  C30B25/005 ,  C30B29/36

Abstract: A PROCESS FOR THE PRODUCTION OF SILICON CARBIDE WHISKERS COMPRISING MAINTAINING A SILICON-CONTAINING VAPOUR AND A CARBON-CONTAINING VAPOUR AT A TEMPERATURE OF AT LEAST 1,100*C. IN A REACTION ZONE IN THE PRESENCE OF A SUBSTRATE WHEREBY SILICON CARBIDE WHISKERS ARE DEPOSITED UPON THE SUBSTRATE, AND IS CHARACTERISED BY PROVIDING A SUPER-SATURATED CONCENTRATION OF AN IRON-CONTAINING VAPOUR IN THE REACTION ZONE SO THAT WHISKER GROWTH MAY CONTINUE EVEN WHEN THE SUBSTRATE IS SUBSTANTIALLY ENTIRELY COATED WITH WHISKERS GIVING CONSEQUENT INCREASE IN YIELD AND PROCESS EFFICIENCY.