公开(公告)号：US10199063B2

公开(公告)日：2019-02-05

申请号：US15127527

申请日：2015-03-19

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Hiroaki Sukegawa ,  Zhenchao Wen ,  Seiji Mitani ,  Koichiro Inomata ,  Takao Furubayashi ,  Jason Paul Hadorn ,  Tadakatsu Ohkubo ,  Kazuhiro Hono ,  Jungwoo Koo

IPC: G11B5/65 ,  G11B5/73 ,  G11B5/84 ,  G11B5/851 ,  G11B5/66 ,  H01F10/30 ,  H01F10/32 ,  G11B5/39 ,  G11C11/16 ,  H01F10/12

Abstract: Disclosed is a perpendicularly magnetized film structure that uses a highly heat resistant underlayer film on which a cubic or tetragonal perpendicularly magnetized film can grow with high quality, the structure comprising any one substrate (5) of a cubic single crystal substrate having a (001) plane, or a substrate having a cubic oriented film that grows to have the (001) plane; an underlayer (6) formed on the substrate (5) from a thin film of a metal having an hcp structure, such as Ru or Re, in which the [0001] direction of the thin metal film forms an angle in the range of 42° to 54° with respect to the direction or the (001) orientation of the substrate (5); and a perpendicularly magnetized layer (7) located on the metal underlayer (6) and formed from a cubic material selected from the group consisting of a Co-based Heusler alloy, a cobalt-iron (CoFe) alloy having a bcc structure, and the like, as a constituent material, and grown to have the (001) plane.

公开(公告)号：US10832719B2

公开(公告)日：2020-11-10

申请号：US16214375

申请日：2018-12-10

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Hiroaki Sukegawa ,  Zhenchao Wen ,  Seiji Mitani ,  Koichiro Inomata ,  Takao Furubayashi ,  Jason Paul Hadorn ,  Tadakatsu Ohkubo ,  Kazuhiro Hono ,  Jungwoo Koo

IPC: G11B5/65 ,  G11B5/73 ,  G11B5/84 ,  H01F10/32 ,  G11B5/39 ,  G11C11/16 ,  G11B5/851 ,  H01F10/12 ,  G11B5/66 ,  H01F10/30

Abstract: Disclosed is a perpendicularly magnetized film structure using a highly heat resistant underlayer film on which a cubic or tetragonal perpendicularly magnetized film can grow, comprising a substrate of a cubic single crystal substrate having a (001) plane or a substrate having a cubic oriented film that grows to have the (001) plane; an underlayer formed on the substrate from a thin film of a metal having an hcp structure in which the [0001] direction of the thin metal film forms an angle in the range of 42° to 54° with respect to the direction or the (001) orientation of the substrate; and a perpendicularly magnetized layer located on the metal underlayer and formed from a cubic material selected from a Co-based Heusler alloy and a cobalt-iron (CoFe) alloy having a bcc structure a constituent material, and grown to have the (001) plane.