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公开(公告)号：US11915920B2
公开(公告)日：2024-02-27
申请号：US17768017
申请日：2020-10-20
Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Inventor： Jie Tang , Shuai Tang , Ta-Wei Chiu , Tadakatsu Ohkubo , Jun Uzuhashi , Kazuhiro Hono , Luchang Qin
Abstract: The present invention provides a simpler method for sharpening a tip of an emitter. In addition, the present invention provides an emitter including a nanoneedle made of a single crystal material, an emitter including a nanowire made of a single crystal material such as hafnium carbide (HfC), both of which stably emit electrons with high efficiency, and an electron gun and an electronic device using any one of these emitters. A method for manufacturing the emitter according to an embodiment of the present invention comprises processing a single crystal material in a vacuum using a focused ion beam to form an end of the single crystal material, through which electrons are to be emitted, into a tapered shape, wherein the processing is performed in an environment in which a periphery of the single crystal material fixed to a support is opened.
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公开(公告)号：US11328743B2
公开(公告)日：2022-05-10
申请号：US17040645
申请日：2019-02-26
Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Inventor： Tomoya Nakatani , Taisuke Sasaki , Takao Furubayashi , Kazuhiro Hono
IPC: G11B5/39 , G01R33/09 , G11B5/02 , G11B5/127 , G11B5/706 , G11C11/16 , H01L43/02 , H01L43/08 , H01L43/10 , G11B5/31 , H01L43/12
Abstract: Provided is a precursor of a current-perpendicular-to-plane giant magnetoresistive element having a laminated structure of ferromagnetic metal layer/nonmagnetic metal layer/ferromagnetic metal layer, the precursor having a nonmagnetic intermediate layer containing a non-magnetic metal and an oxide in a predetermined ratio such that the distribution thereof is nearly uniform at the atomic level. Also provided is a current-perpendicular-to-plane giant magnetoresistive element having a current-confinement structure (CCP) which has: a current confinement structure region made of a conductive alloy and obtained by heat-treating a laminated structure of a ferromagnetic metal layer and a nonmagnetic intermediate layer at a predetermined temperature; and a high-resistance metal alloy region containing an oxide and surrounding the current confinement structure region.
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公开(公告)号：US10395809B2
公开(公告)日：2019-08-27
申请号：US15591348
申请日：2017-05-10
Inventor： Shigeki Takahashi , Yoshiaki Sonobe , Hiroaki Sukegawa , Hwachol Lee , Kazuhiro Hono , Seiji Mitani , Jun Liu
Abstract: Embodiments of the inventive concepts provide a flat perpendicular magnetic layer having a low saturation magnetization and a perpendicular magnetization-type tunnel magnetoresistive element using the same. The perpendicular magnetic layer is a nitrogen-poor (Mn1−xGax)Ny layer (0
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公开(公告)号：US10305027B2
公开(公告)日：2019-05-28
申请号：US15699749
申请日：2017-09-08
Inventor： Yushi Kato , Tadaomi Daibou , Yuuzo Kamiguchi , Naoharu Shimomura , Junichi Ito , Hiroaki Sukegawa , Mohamed Belmoubarik , Po-Han Cheng , Seiji Mitani , Tadakatsu Ohkubo , Kazuhiro Hono
Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The first nonmagnetic layer includes an oxide including an inverse-spinel structure.
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公开(公告)号：US09893260B2
公开(公告)日：2018-02-13
申请号：US14947422
申请日：2015-11-20
Inventor： Yohei Kinoshita , Yuya Sakuraba , Taisuke Sasaki , Kazuhiro Hono
CPC classification number: H01L35/20 , C22C38/00 , C22C2202/00
Abstract: Provided is a thermoelectric material which can increase its anomalous Nernst angle. The thermoelectric material of a magnetic material for a thermoelectric power generation device employs the anomalous Nernst effect, including iron doped with iridium.
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Patent Agency Ranking
公开(公告)号：US11133459B2
公开(公告)日：2021-09-28
申请号：US16498936
申请日：2018-02-15
Applicant: National Institute of Advanced Industrial Science and Technology , TOHOKU UNIVERSITY , NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Inventor： Takayuki Nozaki , Shinji Yuasa , Rachwal Anna Koziol , Masahito Tsujikawa , Masafumi Shirai , Kazuhiro Hono , Tadakatsu Ohkubo , Xiandong Xu
Abstract: According to one embodiment, a magnetic element includes a first layer and a second layer. The first layer includes a first element and a second element. The first element includes at least one selected from the group consisting of Fe, Co, and Ni. The second element includes at least one selected from the group consisting of Ir and Os. The second layer is nonmagnetic.
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公开(公告)号：US11105867B2
公开(公告)日：2021-08-31
申请号：US16074135
申请日：2017-01-31
Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Inventor： Hiroaki Sukegawa , Thomas Scheike , Seiji Mitani , Tadakatsu Ohkubo , Kazuhiro Hono , Kouichiro Inomata
Abstract: The object of the present invention is to attain an unconventionally high tunnel magnetoresistance (TMR) ratio by using a barrier layer made of an MgAl2O4 type insulator material with a spinel structure. The problem can be solved by a magnetic tunnel junction in which a barrier layer is made of a cubic nonmagnetic material having a spinel structure, and both of two ferromagnetic layers that are adjacently on and below the barrier layer are made of a Co2FeAl Heusler alloy. Preferably, the nonmagnetic material is made of oxide of an Mg1−xAlx (0
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公开(公告)号：US11004465B2
公开(公告)日：2021-05-11
申请号：US16311367
申请日：2017-06-23
Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Inventor： Shinya Kasai , Yukiko Takahashi , Pohan Cheng , Ikhtiar , Seiji Mitani , Tadakatsu Ohkubo , Kazuhiro Hono
Abstract: An object of the present invention is to provide a Magneto-Resistance (MR) element showing a high Magneto-Resistance (MR) ratio and having a suitable Resistance-Area (RA) for device applications. The MR element of the present invention has a laminated structure including a first ferromagnetic layer 16, a non-magnetic layer 18, and a second ferromagnetic layer 20 on a substrate 10, wherein the first ferromagnetic layer 16 includes a Heusler alloy, the second ferromagnetic layer 20 includes a Heusler alloy, the non-magnetic layer 18 includes a I-III-VI2 chalcopyrite-type compound semiconductor, and the non-magnetic layer 18 has a thickness of 0.5 to 3 nm, and wherein the MR element shows a Magneto-Resistance (MR) change of 40% or more, and has a resistance-area (RA) of 0.1 [Ωμm2] or more and 3 [Ωμm2] or less.
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公开(公告)号：US10832719B2
公开(公告)日：2020-11-10
申请号：US16214375
申请日：2018-12-10
Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Inventor： Hiroaki Sukegawa , Zhenchao Wen , Seiji Mitani , Koichiro Inomata , Takao Furubayashi , Jason Paul Hadorn , Tadakatsu Ohkubo , Kazuhiro Hono , Jungwoo Koo
IPC: G11B5/65 , G11B5/73 , G11B5/84 , H01F10/32 , G11B5/39 , G11C11/16 , G11B5/851 , H01F10/12 , G11B5/66 , H01F10/30
Abstract: Disclosed is a perpendicularly magnetized film structure using a highly heat resistant underlayer film on which a cubic or tetragonal perpendicularly magnetized film can grow, comprising a substrate of a cubic single crystal substrate having a (001) plane or a substrate having a cubic oriented film that grows to have the (001) plane; an underlayer formed on the substrate from a thin film of a metal having an hcp structure in which the [0001] direction of the thin metal film forms an angle in the range of 42° to 54° with respect to the direction or the (001) orientation of the substrate; and a perpendicularly magnetized layer located on the metal underlayer and formed from a cubic material selected from a Co-based Heusler alloy and a cobalt-iron (CoFe) alloy having a bcc structure a constituent material, and grown to have the (001) plane.
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公开(公告)号：US10665776B2
公开(公告)日：2020-05-26
申请号：US16275947
申请日：2019-02-14
Applicant: TDK CORPORATION , NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Inventor： Shinto Ichikawa , Katsuyuki Nakada , Seiji Mitani , Hiroaki Sukegawa , Kazuhiro Hono , Tadakatsu Ohkubo
Abstract: Provided is a magnetoresistance effect element in which a tunnel barrier layer stably has a cation disordered spinel structure. This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer disposed between the first ferromagnetic layer and the second ferromagnetic layer. In addition, the tunnel barrier layer is an oxide of MgxAl1-x (0≤x
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