公开(公告)号：US20240213364A1

公开(公告)日：2024-06-27

申请号：US18556293

申请日：2022-04-15

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Yoshinao MIURA ,  Akira NAKAJIMA ,  Xu-Qiang SHEN ,  Hirohisa HIRAI ,  Shinsuke HARADA

IPC: H01L29/78 ,  H01L21/265 ,  H01L29/20 ,  H01L29/861

CPC classification number: H01L29/7811 ,  H01L21/265 ,  H01L29/2003 ,  H01L29/7813 ,  H01L29/8613

Abstract: There is provided a semiconductor equipment including: an element area having an n-type layer, a first p-type layer on the n-type layer, and a second p-type layer on the first p-type layer, the second p-type layer having an acceptor concentration higher than the first p-type layer; and an electric field relaxation region surrounding the element area, in which in the electric field relaxation region, a region containing an impurity element that inactivates a part of acceptors in the first p-type layer and the second p-type layer is provided in the first p-type layer and the second p-type layer.

公开(公告)号：US20240332281A1

公开(公告)日：2024-10-03

申请号：US18737031

申请日：2024-06-07

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Akira NAKAJIMA ,  Shinsuke HARADA ,  Kazutoshi KOJIMA

IPC: H01L27/02 ,  H01L29/20 ,  H01L29/778

CPC classification number: H01L27/0255 ,  H01L29/2003 ,  H01L29/7786

Abstract: A destructive breakdown mode that leads to the destruction of a device is suppressed, in the case where a gallium nitride-based high electron mobility transistor is used as a power device. A diode is connected in antiparallel to a HEMT, and this antiparallel connected diode is designed such that an avalanche breakdown occurs therein before the drain-source voltage, which is the difference between the drain potential applied to a drain electrode and the source potential applied to a source electrode, exceeds the withstand voltage of the HEMT.