公开(公告)号：US20250063766A1

公开(公告)日：2025-02-20

申请号：US18722538

申请日：2022-11-16

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Wen-Hsin Chang ,  Toshifumi Irisawa ,  Naoya Okada ,  Yuta Saito ,  Shogo Hatayama

IPC: H01L29/786 ,  H01L29/16 ,  H01L29/45 ,  H01L29/66

Abstract: Provided are an electronic/optical device, which is reduced in contact resistance occurring between a layered material layer and a metal electrode layer, and a method of manufacturing the device. The electronic/optical device of the present invention includes a laminated structure in which an intermediate layer is arranged between a layered material layer (2) and a metal electrode layer (3). The intermediate layer is a crystal layer (4) of an intermediate layer-forming material containing: at least one of Sb and Bi; and Te. In addition, the method of manufacturing an electronic/optical device of the present invention includes: an intermediate layer-forming step of forming, on the layered material layer (2), the intermediate layer (crystal layer (4)) obtained by crystallizing an intermediate layer-forming material containing: at least one of Sb and Bi; and Te; and a metal electrode layer-forming step of forming the metal electrode layer (3) on the intermediate layer.

公开(公告)号：US10692986B2

公开(公告)日：2020-06-23

申请号：US16302441

申请日：2017-06-15

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Naoya Okada ,  Noriyuki Uchida ,  Toshihiko Kanayama

IPC: H01L29/45 ,  H01L21/285 ,  C23C16/06 ,  H01L21/28 ,  H01L29/78 ,  H01L29/417 ,  H01L29/786

Abstract: A compound film of tungsten and germanium useful for semiconductor devices, a semiconductor device using the compound film and a method and an apparatus for manufacturing the compound film. Various embodiments include a compound film of tungsten and germanium, which has a germanium/tungsten composition ratio of 0.2 or more and less than 6 and includes an optical energy gap. The compound film of tungsten and germanium is produced on a substrate by causing a material gas of tungsten and a material gas of germanium to undergo a chemical reaction in at least one of a region in a gas phase and a region on the substrate. Various embodiments include a semiconductor device including a stack structure in which a semiconductor substrate, a compound film of tungsten and germanium having a germanium/tungsten composition ratio of 1 or more and 3.2 or less, and a metal electrode are laminated in this order.