公开(公告)号：US20190019766A1

公开(公告)日：2019-01-17

申请号：US15750614

申请日：2016-08-03

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Yohei Hori ,  Yongxun Liu ,  Shinichi Ouchi ,  Tetsuji Yasuda ,  Meishoku Masahara ,  Toshifumi Irisawa ,  Kazuhiko Endo ,  Hiroyuki Ota ,  Tatsuro Maeda ,  Hanpei Koike ,  Yasuhiro Ogasahara ,  Toshihiro Katashita ,  Koichi Fukuda

IPC: H01L23/00 ,  H01L25/065 ,  H01L23/522

Abstract: A semiconductor device 100 of the present invention includes a front end and back ends A and B, each including a plurality of layers. Further, in the plurality of layers of the back end B, (i) circuits 22, 23, and 24 having a security function are provided in at least one layer having a wiring pitch of 100 nm or more, (ii) a circuit having a security function is provided in at least one wiring layer in M5 or higher level (M5, M6, M7, . . . ), (iii) a circuit having a security function is provided in at least one layer, for which immersion ArF exposure does not need to be used, or (iv) a circuit having a security function is provided in at least one layer that is exposed by using an exposure wavelength of 200 nm or more.

公开(公告)号：US20250063766A1

公开(公告)日：2025-02-20

申请号：US18722538

申请日：2022-11-16

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Wen-Hsin Chang ,  Toshifumi Irisawa ,  Naoya Okada ,  Yuta Saito ,  Shogo Hatayama

IPC: H01L29/786 ,  H01L29/16 ,  H01L29/45 ,  H01L29/66

Abstract: Provided are an electronic/optical device, which is reduced in contact resistance occurring between a layered material layer and a metal electrode layer, and a method of manufacturing the device. The electronic/optical device of the present invention includes a laminated structure in which an intermediate layer is arranged between a layered material layer (2) and a metal electrode layer (3). The intermediate layer is a crystal layer (4) of an intermediate layer-forming material containing: at least one of Sb and Bi; and Te. In addition, the method of manufacturing an electronic/optical device of the present invention includes: an intermediate layer-forming step of forming, on the layered material layer (2), the intermediate layer (crystal layer (4)) obtained by crystallizing an intermediate layer-forming material containing: at least one of Sb and Bi; and Te; and a metal electrode layer-forming step of forming the metal electrode layer (3) on the intermediate layer.