公开(公告)号：US11686019B2

公开(公告)日：2023-06-27

申请号：US16644656

申请日：2018-10-11

Applicant: National Institute of Advanced Industrial Science and Technology ,  Asahi Kasei Kabushiki Kaisha

Inventor： Ken Mukai ,  Shuhei Ikenaga ,  Kinji Asaka ,  Toru Morita ,  Yujin Motoyama ,  Yuta Saito

IPC: D01F9/08 ,  D02G3/44 ,  H01B1/04 ,  B82Y30/00 ,  C01B32/168 ,  B82Y40/00

CPC classification number: D01F9/08 ,  C01B32/168 ,  D02G3/441 ,  H01B1/04 ,  B82Y30/00 ,  B82Y40/00 ,  C01B2202/22 ,  C01B2202/36 ,  C01P2002/82 ,  C01P2004/04 ,  C01P2006/10 ,  D10B2101/122 ,  D10B2401/16

Abstract: The purpose of the present disclosure is to provide a CNT fiber that is constituted of aligned carbon nanotubes (CNTs), is thin, has little irregularity in thickness, has excellent winding properties when undergoing coiling processing, and has superior conductivity. Provided is a CNT fiber constituted of carbon nanotubes (CNTs) having a thickness of 0.01 μm-3 mm, having a coefficient of variation for irregularity in thickness of 0.2 or less, having a distribution rate a for deviation from roundness of 40% or greater, and a distribution rate b of 70% or greater. Also provided is a method for manufacturing the CNT fiber.

公开(公告)号：US20210071320A1

公开(公告)日：2021-03-11

申请号：US16644656

申请日：2018-10-11

Applicant: National Institute of Advanced Industrial Science and Technology ,  Asahi Kasei Kabushiki Kaisha

Inventor： Ken Mukai ,  Shuhei Ikenaga ,  Kinji Asaka ,  Toru Morita ,  Yujin Motoyama ,  Yuta Saito

IPC: D01F9/08 ,  D02G3/44 ,  C01B32/168 ,  H01B1/04

Abstract: The purpose of the present disclosure is to provide a CNT fiber that is constituted of aligned carbon nanotubes (CNTs), is thin, has little irregularity in thickness, has excellent winding properties when undergoing coiling processing, and has superior conductivity. Provided is a CNT fiber constituted of carbon nanotubes (CNTs) having a thickness of 0.01 μm-3 mm, having a coefficient of variation for irregularity in thickness of 0.2 or less, having a distribution rate a for deviation from roundness of 40% or greater, and a distribution rate b of 70% or greater. Also provided is a method for manufacturing the CNT fiber.

公开(公告)号：US20180043448A1

公开(公告)日：2018-02-15

申请号：US15558227

申请日：2016-02-22

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Junji Tominaga ,  Yuta Saito

IPC: B23H5/04 ,  H01L29/82

Abstract: A method of initializing a multiferroic element for obtaining a stable element operation includes applying at least one selected from a group consisting of an electric field and a magnetic field to the multiferroic element under a temperature condition equal to or higher than a phase transition temperature. The multiferroic element has a laminated structural body including a first alloy layer and a second alloy layer. The first alloy layer is formed by using any of antimony-tellurium, bismuth-tellurium and bismuth-selenium as a principal component. The second alloy layer is laminated on the first alloy layer, and formed by using a compound represented by the following general formula (1) as a principal component. The second alloy layer is configured to undergo phase transition between a reset phase and a set phase. Electric polarization is not caused in the reset phase, but caused in the set phase. The second alloy layer undergoes the phase transition from the reset phase to the set phase at the phase transition temperature.[Chemical Formula 1] M1-xTex   (1) Here, in the above-mentioned general formula (1), M represents an atom of any of germanium, aluminum and silicon, and x represents a numerical value of 0.5 or more and lower than 1.

公开(公告)号：US20170062711A1

公开(公告)日：2017-03-02

申请号：US15349074

申请日：2016-11-11

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Yuta Saito ,  Junji Tominaga ,  Reiko Kondo

IPC: H01L45/00 ,  C23C14/34

CPC classification number: H01L45/06 ,  C23C14/34 ,  C30B23/025 ,  C30B29/46 ,  C30B29/68 ,  G11C11/161 ,  H01L27/105 ,  H01L29/82 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1625

Abstract: A crystal orientation layer laminated structure capable of widely selecting materials for a base substrate and an electrode substrate, an electronic memory using the crystal orientation layer laminated structure and a method for manufacturing the crystal orientation layer laminated structure are provided. The crystal orientation layer laminated structure according to the present invention has such a feature as including a substrate, including an orientation control layer which is laminated on the substrate, which is made of any of germanium, silicon, tungsten, germanium-silicon, germanium-tungsten and silicon-tungsten, and whose thickness is at least 1 nm or more, and including a first crystal orientation layer which is laminated on the orientation control layer, which is made of any of SbTe, Sb2Te3, BiTe, Bi2Te3, BiSe and Bi2Se3 as a main component, and which is oriented in a certain crystal orientation

Abstract translation: 提供能够广泛选择用于基底基板和电极基板的材料的晶体取向层层叠结构，使用晶体取向层叠结构的电子存储器以及晶体取向层层叠结构的制造方法。 根据本发明的晶体取向层层叠结构具有包括基板的特征，该基板包括层叠在基板上的取向控制层，该取向控制层由锗，硅，钨，锗 - 硅，锗 - 钨和硅 - 钨，并且其厚度为至少1nm以上，并且包括层叠在取向控制层上的由SbTe，Sb2Te3，BiTe，Bi2Te3，BiSe和Bi2Se3中的任一种制成的第一晶体取向层 作为主要成分，其取向为一定的晶体取向

公开(公告)号：US10543545B2

公开(公告)日：2020-01-28

申请号：US15558227

申请日：2016-02-22

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Junji Tominaga ,  Yuta Saito

IPC: B21H5/04 ,  H01L29/82 ,  B23H5/04 ,  H01L29/16

Abstract: A method of initializing a multiferroic element for obtaining a stable element operation includes applying at least one selected from a group consisting of an electric field and a magnetic field to the multiferroic element under a temperature condition equal to or higher than a phase transition temperature. The multiferroic element has a laminated structural body including a first alloy layer and a second alloy layer. The first alloy layer is formed by using any of antimony-tellurium, bismuth-tellurium and bismuth-selenium as a principal component. The second alloy layer is laminated on the first alloy layer, and formed by using a compound represented by the following general formula (1) as a principal component. The second alloy layer is configured to undergo phase transition between a reset phase and a set phase. Electric polarization is not caused in the reset phase, but caused in the set phase. The second alloy layer undergoes the phase transition from the reset phase to the set phase at the phase transition temperature.[Chemical Formula 1] M1-xTex   (1) Here, in the above-mentioned general formula (1), M represents an atom of any of germanium, aluminum and silicon, and x represents a numerical value of 0.5 or more and lower than 1.

公开(公告)号：US10090460B2

公开(公告)日：2018-10-02

申请号：US15349074

申请日：2016-11-11

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Yuta Saito ,  Junji Tominaga ,  Reiko Kondo

IPC: H01L29/49 ,  H01L45/00 ,  H01L27/105 ,  H01L29/82 ,  C23C14/34 ,  C30B23/02 ,  C30B29/46 ,  C30B29/68 ,  G11C11/16

Abstract: A crystal orientation layer laminated structure capable of widely selecting materials for a base substrate and an electrode substrate, an electronic memory using the crystal orientation layer laminated structure and a method for manufacturing the crystal orientation layer laminated structure are provided. The crystal orientation layer laminated structure according to the present invention has such a feature as including a substrate, including an orientation control layer which is laminated on the substrate, which is made of any of germanium, silicon, tungsten, germanium-silicon, germanium-tungsten and silicon-tungsten, and whose thickness is at least 1 nm or more, and including a first crystal orientation layer which is laminated on the orientation control layer, which is made of any of SbTe, Sb2Te3, BiTe, Bi2Te3, BiSe and Bi2Se3 as a main component, and which is oriented in a certain crystal orientation.

公开(公告)号：US20250063766A1

公开(公告)日：2025-02-20

申请号：US18722538

申请日：2022-11-16

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Wen-Hsin Chang ,  Toshifumi Irisawa ,  Naoya Okada ,  Yuta Saito ,  Shogo Hatayama

IPC: H01L29/786 ,  H01L29/16 ,  H01L29/45 ,  H01L29/66

Abstract: Provided are an electronic/optical device, which is reduced in contact resistance occurring between a layered material layer and a metal electrode layer, and a method of manufacturing the device. The electronic/optical device of the present invention includes a laminated structure in which an intermediate layer is arranged between a layered material layer (2) and a metal electrode layer (3). The intermediate layer is a crystal layer (4) of an intermediate layer-forming material containing: at least one of Sb and Bi; and Te. In addition, the method of manufacturing an electronic/optical device of the present invention includes: an intermediate layer-forming step of forming, on the layered material layer (2), the intermediate layer (crystal layer (4)) obtained by crystallizing an intermediate layer-forming material containing: at least one of Sb and Bi; and Te; and a metal electrode layer-forming step of forming the metal electrode layer (3) on the intermediate layer.