公开(公告)号：US20190333998A1

公开(公告)日：2019-10-31

申请号：US16224882

申请日：2018-12-19

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Keiko MASUMOTO ,  Takashi MITANI ,  Kazuma ETO ,  Kazutoshi KOJIMA ,  Tomohisa KATO

IPC: H01L29/16 ,  H01L29/739 ,  H01L29/66 ,  H01L21/02 ,  C30B23/02 ,  C30B29/36

Abstract: A high quality silicon carbide epitaxial wafer using a p-type silicon carbide single crystal substrate of low resistivity. The silicon carbide epitaxial wafer includes a p-type 4H—SiC single crystal substrate that has a first main surface having an off angle with respect to (0001) plane, and has a resistivity of less than 0.4 Ωcm, and a silicon carbide epitaxial layer that is disposed on the first main surface of the p-type 4H—SiC single crystal substrate, in which an off direction of the off angle is the direction.