公开(公告)号：US20190333998A1

公开(公告)日：2019-10-31

申请号：US16224882

申请日：2018-12-19

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Keiko MASUMOTO ,  Takashi MITANI ,  Kazuma ETO ,  Kazutoshi KOJIMA ,  Tomohisa KATO

IPC: H01L29/16 ,  H01L29/739 ,  H01L29/66 ,  H01L21/02 ,  C30B23/02 ,  C30B29/36

Abstract: A high quality silicon carbide epitaxial wafer using a p-type silicon carbide single crystal substrate of low resistivity. The silicon carbide epitaxial wafer includes a p-type 4H—SiC single crystal substrate that has a first main surface having an off angle with respect to (0001) plane, and has a resistivity of less than 0.4 Ωcm, and a silicon carbide epitaxial layer that is disposed on the first main surface of the p-type 4H—SiC single crystal substrate, in which an off direction of the off angle is the direction.

公开(公告)号：US20200325595A1

公开(公告)日：2020-10-15

申请号：US16914506

申请日：2020-06-29

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  SHOWA DENKO K.K. ,  DENSO CORPORATION

Inventor： Kazuma ETO ,  Tomohisa KATO ,  Hiromasa SUO ,  Yuichiro TOKUDA

IPC: C30B23/06 ,  C30B29/36 ,  H01L21/02 ,  C30B23/00 ,  H01B1/04

Abstract: A method for producing a p-type 4H-SiC single crystal includes sublimating a nitrided aluminum raw material and a SiC raw material. Further, there is a stacking of a SiC single crystal, which is co-doped with aluminum and nitrogen, on one surface of a seed crystal.

公开(公告)号：US20180274125A1

公开(公告)日：2018-09-27

申请号：US15763596

申请日：2016-09-29

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  SHOWA DENKO K.K.

Inventor： Kazuma ETO ,  Tomohisa KATO ,  Hiromasa SUO ,  Yuichiro TOKUDA

IPC: C30B23/06 ,  C30B29/36

CPC classification number: C30B23/06 ,  C30B29/36

Abstract: The present invention provides a p-type 4H—SiC single crystal, which is doped with both aluminum and nitrogen, and has a nitrogen concentration of 2.0×1019/cm3 or more.