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公开(公告)号：US12119739B2
公开(公告)日：2024-10-15
申请号：US17853746
申请日：2022-06-29
发明人： Marco Giandalia , Jason Zhang , Hongwei Jia , Daniel M. Kinzer
CPC分类号： H02M1/08 , G05F1/573 , H02M1/32 , H02M3/155 , H02M3/158 , H03K3/012 , H02H9/02 , H03K2217/0081
摘要： An electronic circuit is disclosed. The electronic circuit includes a transistor having a gate terminal, a source terminal and a drain terminal, and a gate driver circuit including a pull-down transistor coupled to the gate terminal, and an input terminal arranged to receive an input signal and generate a corresponding output signal at an output terminal coupled to the gate terminal, where the gate driver circuit is arranged to store energy harvested from the input signal and use the stored energy to change a conductive state of the pull-down transistor. In one aspect, the transistor includes gallium nitride (GaN). In another aspect, the pull-down transistor includes GaN.
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公开(公告)号：US20220084978A1
公开(公告)日：2022-03-17
申请号：US17169320
申请日：2021-02-05
发明人： Daniel M. Kinzer , Jason Zhang , Thomas Ribarich
IPC分类号： H01L23/00 , H02M7/219 , H01L29/20 , H01L25/18 , H01L23/495
摘要： An electronic power conversion component includes an electrically conductive package base comprising a source terminal, a drain terminal, at least one I/O terminal and a die-attach pad wherein the source terminal is electrically isolated from the die-attach pad. A GaN-based semiconductor die is secured to the die attach pad and includes a power transistor having a source and a drain, wherein the source is electrically coupled to the source terminal and the drain is electrically coupled to the drain terminal. A plurality of wirebonds electrically couple the source to the source terminal and the drain to the drain terminal. An encapsulant is formed over the GaN-based semiconductor die, the plurality of wirebonds and at least a top surface of the package base.
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公开(公告)号：US11791709B2
公开(公告)日：2023-10-17
申请号：US17853749
申请日：2022-06-29
发明人： Marco Giandalia , Jason Zhang , Hongwei Jia , Daniel M. Kinzer
摘要： A circuit is disclosed. The circuit includes a first transistor including a first drain terminal, a first gate terminal and a first source terminal, a depletion-mode transistor including a second drain terminal, a second gate terminal and a second source terminal, the second drain terminal connected to the first drain terminal, the depletion-mode transistor arranged to sense a first voltage at the first drain terminal and generate a second voltage at the second source terminal, and a comparator arranged to receive the second voltage, and transition the first transistor from an on state to an off state in response to the first transistor entering its saturation region of operation. In one aspect, the first transistor includes gallium nitride (GaN). In another aspect, the circuit further includes a logic circuit arranged to receive an output voltage generated by the comparator and to drive the first gate terminal.
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公开(公告)号：US11715720B2
公开(公告)日：2023-08-01
申请号：US17169320
申请日：2021-02-05
发明人： Daniel M. Kinzer , Jason Zhang , Thomas Ribarich
CPC分类号： H01L24/48 , H01L23/4951 , H01L23/49575 , H01L25/18 , H02M7/219 , H01L29/16 , H01L29/2003 , H01L2224/4807 , H01L2224/48229 , H01L2924/1425 , H01L2924/14252 , H01L2924/15333
摘要： An electronic power conversion component includes an electrically conductive package base comprising a source terminal, a drain terminal, at least one I/O terminal and a die-attach pad wherein the source terminal is electrically isolated from the die-attach pad. A GaN-based semiconductor die is secured to the die attach pad and includes a power transistor having a source and a drain, wherein the source is electrically coupled to the source terminal and the drain is electrically coupled to the drain terminal. A plurality of wirebonds electrically couple the source to the source terminal and the drain to the drain terminal. An encapsulant is formed over the GaN-based semiconductor die, the plurality of wirebonds and at least a top surface of the package base.
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公开(公告)号：US20230006539A1
公开(公告)日：2023-01-05
申请号：US17853746
申请日：2022-06-29
发明人： Marco Giandalia , Jason Zhang , Hongwei Jia , Daniel M. Kinzer
摘要： An electronic circuit is disclosed. The electronic circuit includes a transistor having a gate terminal, a source terminal and a drain terminal, and a gate driver circuit including a pull-down transistor coupled to the gate terminal, and an input terminal arranged to receive an input signal and generate a corresponding output signal at an output terminal coupled to the gate terminal, where the gate driver circuit is arranged to store energy harvested from the input signal and use the stored energy to change a conductive state of the pull-down transistor. In one aspect, the transistor includes gallium nitride (GaN). In another aspect, the pull-down transistor includes GaN.
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公开(公告)号：US20230421046A1
公开(公告)日：2023-12-28
申请号：US18463198
申请日：2023-09-07
发明人： Marco Giandalia , Jason Zhang , Hongwei Jia , Daniel M. Kinzer
摘要： A circuit is disclosed. The circuit includes a first transistor including a first drain terminal, a first gate terminal and a first source terminal, a depletion-mode transistor including a second drain terminal, a second gate terminal and a second source terminal, the second drain terminal connected to the first drain terminal, the depletion-mode transistor arranged to sense a first voltage at the first drain terminal and generate a second voltage at the second source terminal, and a comparator arranged to receive the second voltage, and transition the first transistor from an on state to an off state in response to the first transistor entering its saturation region of operation. In one aspect, the first transistor includes gallium nitride (GaN). In another aspect, the circuit further includes a logic circuit arranged to receive an output voltage generated by the comparator and to drive the first gate terminal.
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公开(公告)号：US20230387067A1
公开(公告)日：2023-11-30
申请号：US18339123
申请日：2023-06-21
发明人： Daniel M. Kinzer , Jason Zhang , Thomas Ribarich
IPC分类号： H01L23/00 , H01L23/495 , H01L25/18 , H02M7/219
CPC分类号： H01L24/48 , H01L23/4951 , H01L23/49575 , H01L25/18 , H02M7/219 , H01L2924/1425 , H01L2924/15333 , H01L2224/48229 , H01L29/2003
摘要： An electronic power conversion component includes an electrically conductive package base comprising a source terminal, a drain terminal, at least one I/O terminal and a die-attach pad wherein the source terminal is electrically isolated from the die-attach pad. A GaN-based semiconductor die is secured to the die attach pad and includes a power transistor having a source and a drain, wherein the source is electrically coupled to the source terminal and the drain is electrically coupled to the drain terminal. A plurality of wirebonds electrically couple the source to the source terminal and the drain to the drain terminal. An encapsulant is formed over the GaN-based semiconductor die, the plurality of wirebonds and at least a top surface of the package base.
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公开(公告)号：US20230006658A1
公开(公告)日：2023-01-05
申请号：US17853749
申请日：2022-06-29
发明人： Marco Giandalia , Jason Zhang , Hongwei Jia , Daniel M. Kinzer
摘要： A circuit is disclosed. The circuit includes a first transistor including a first drain terminal, a first gate terminal and a first source terminal, a depletion-mode transistor including a second drain terminal, a second gate terminal and a second source terminal, the second drain terminal connected to the first drain terminal, the depletion-mode transistor arranged to sense a first voltage at the first drain terminal and generate a second voltage at the second source terminal, and a comparator arranged to receive the second voltage, and transition the first transistor from an on state to an off state in response to the first transistor entering its saturation region of operation. In one aspect, the first transistor includes gallium nitride (GaN). In another aspect, the circuit further includes a logic circuit arranged to receive an output voltage generated by the comparator and to drive the first gate terminal.
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公开(公告)号：US20220102251A1
公开(公告)日：2022-03-31
申请号：US17448324
申请日：2021-09-21
发明人： Daniel M. Kinzer , Jason Zhang , Thomas Ribarich
IPC分类号： H01L23/495 , H01L23/00 , H01L25/16
摘要： An electronic power conversion component includes an electrically conductive package base comprising a source terminal, a drain terminal, at least one I/O terminal and a die-attach pad wherein the source terminal is electrically isolated from the die-attach pad. A GaN-based semiconductor die is secured to the die attach pad and includes a power transistor having a source and a drain, wherein the source is electrically coupled to the source terminal and the drain is electrically coupled to the drain terminal. A plurality of wirebonds electrically couple the source to the source terminal and the drain to the drain terminal. An encapsulant is formed over the GaN-based semiconductor die, the plurality of wirebonds and at least a top surface of the package base.
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公开(公告)号：US11145579B1
公开(公告)日：2021-10-12
申请号：US17169304
申请日：2021-02-05
发明人： Daniel M. Kinzer , Jason Zhang , Thomas Ribarich
IPC分类号： H01L31/0256 , H01L23/495 , H01L23/00 , H01L25/16
摘要： An electronic power conversion component includes an electrically conductive package base comprising a source terminal, a drain terminal, at least one I/O terminal and a die-attach pad wherein the source terminal is electrically isolated from the die-attach pad. A GaN-based semiconductor die is secured to the die attach pad and includes a power transistor having a source and a drain, wherein the source is electrically coupled to the source terminal and the drain is electrically coupled to the drain terminal. A plurality of wirebonds electrically couple the source to the source terminal and the drain to the drain terminal. An encapsulant is formed over the GaN-based semiconductor die, the plurality of wirebonds and at least a top surface of the package base.
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