公开(公告)号：US20130182208A1

公开(公告)日：2013-07-18

申请号：US13783907

申请日：2013-03-04

Applicant: NEC LCD Technologies, Ltd.

Inventor： Soichi SAITO ,  Shinya NIIOKA ,  Masayuki JUMONJI ,  Hiroshi TANABE ,  Masamichi SHIMODA

IPC: G02F1/1343

CPC classification number: G02F1/134363 ,  G02F1/136286 ,  G02F2001/136295

Abstract: A liquid crystal display device of IPS mode includes an array of pixels arranged in a matrix pattern by crossing a plurality of video signal lines and a plurality of scanning signal lines each other. Each of the pixels is provided with at least a switching element. A transparent insulating film is provided on both signal lines, and a plurality of pixel electrodes, common electrodes and common lines are provided on the transparent insulating film. The common lines are formed in a grid-shaped pattern such that a first group of the common lines is made of a first conductor having lower reflectivity against optical light than that of metal while a second group of the common lines is made of a second conductor including a metal layer such that said first group and said second group are crossing each other along said video signal lines and said scanning signal lines.

Abstract translation: IPS模式的液晶显示装置包括通过使多条视频信号线和多条扫描信号线相互交叉而以矩阵状排列的像素阵列。 每个像素设置有至少一个开关元件。 在两条信号线上设置透明绝缘膜，在透明绝缘膜上设置多个像素电极，公共电极和公共线。 公共线形成为格子状图案，使得第一组公共线由具有比光的反射率低的金属的第一导体制成，而第二组公共线由第二导体 包括金属层，使得所述第一组和所述第二组沿着所述视频信号线和所述扫描信号线彼此交叉。

公开(公告)号：US20130069097A1

公开(公告)日：2013-03-21

申请号：US13676754

申请日：2012-11-14

Applicant: NEC LCD TECHNOLOGIES, LTD.

Inventor： Shigeru MORI ,  Takahiro KORENARI ,  Hiroshi TANABE

IPC: H01L33/58 ,  H01L29/78

CPC classification number: H01L33/58 ,  H01L29/7833 ,  H01L29/78621 ,  H01L29/78633

Abstract: The present invention provides a thin-film transistor manufactured on a transparent substrate having a structure of a top gate type crystalline silicon thin-film transistor in which a light blocking film, a base layer, a crystalline silicon film, a gate insulating film, and a gate electrode film arranged not to overlap at least a channel region are sequentially formed on the transparent substrate; wherein the channel region having channel length L, LDD regions having LDD length d on both sides of the channel region, a source region, and a drain region are formed in the crystalline silicon film; the light blocking film is divided across the channel region; and interval x between the divided light blocking films is equal to or larger than channel length L and equal to or smaller than a sum of channel length L and a double of LDD length d (L+2d). Thereby, the cost for manufacturing the thin-film transistor is low, and the photo leak current of the thin-film transistor is suppressed.

Abstract translation: 本发明提供一种制造在具有顶栅型晶体硅薄膜晶体管的透明基板上的薄膜晶体管，其中遮光膜，基底层，晶体硅膜，栅极绝缘膜和 在透明基板上依次形成布置成不与至少沟道区重叠的栅电极膜; 其中在晶体硅膜中形成具有沟道长度L的沟道区，沟道区两侧具有LDD长度d的LDD区，源区和漏区; 遮光膜在通道区域分割; 并且分割的遮光膜之间的间隔x等于或大于沟道长度L并且等于或小于沟道长度L和LDD长度d（L + 2d）的两倍的总和。 因此，制造薄膜晶体管的成本低，并且薄膜晶体管的光漏电流被抑制。