公开(公告)号：US20040134878A1

公开(公告)日：2004-07-15

申请号：US10704670

申请日：2003-11-12

Applicant: NEC LCD TECHNOLOGIES, LTD.

Inventor： Hidekazu Matsushita ,  Tsuyoshi Katoh ,  Satoshi Doi ,  Akitoshi Maeda

IPC: C30B033/00

CPC classification number: G02F1/13458 ,  G02F1/136227 ,  G02F2001/13629 ,  H01L27/12 ,  H01L27/124

Abstract: A method for manufacturing a TFT panel of an LCD device includes the steps of wet etching a multilayer metallic structure including a high-melting-point metal film (HMPM) film, Al film and another HMPM film while using side etching technique by using a photoresist mask, hot-water washing the side walls of the Al film after the wet etching, and dry etching for configuring the channel region of a TFT in each pixel, and removing the photoresist mask. The presence of the photoresist mask and the protection film prevents corrosion of Al caused by plasma of the etching gas in the dry etching.

Abstract translation: 一种用于制造LCD装置的TFT面板的方法包括以下步骤：使用侧蚀刻技术通过使用光致抗蚀剂来湿蚀刻包括高熔点金属膜（HMPM）膜，Al膜和另一HMPM膜的多层金属结构 掩模，在湿法蚀刻之后热水洗涤Al膜的侧壁，以及干法蚀刻以构成每个像素中的TFT的沟道区域，以及去除光致抗蚀剂掩模。 光致抗蚀剂掩模和保护膜的存在防止了由干蚀刻中的蚀刻气体的等离子体引起的Al的腐蚀。