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公开(公告)号：US10115854B2
公开(公告)日：2018-10-30
申请号：US15508975
申请日：2015-09-04
IPC分类号： H01L31/18 , B23K26/00 , B23K26/354 , B23K26/073 , B23K26/082 , H01L21/02 , H01L31/047 , B23K101/34 , B23K101/40 , B23K103/16 , B23K103/00
摘要： The present disclosure provides a method of manufacturing a semiconductor device. Furthermore the present disclosure provides a photovoltaic device and a light emitting diode manufactured in accordance with the method. The method comprises the steps of forming a germanium layer using deposition techniques compatible with high-volume, low-cost manufacturing, such as magnetron sputtering, and exposing the germanium layer to laser light to reduce the amount of defects in the germanium layer. After the method is performed the germanium layer can be used as a virtual germanium substrate for the growth of III-V materials.
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公开(公告)号：US20170244005A1
公开(公告)日：2017-08-24
申请号：US15508975
申请日：2015-09-04
IPC分类号： H01L31/18 , B23K26/354 , H01L31/047 , B23K26/082 , H01L21/02 , B23K26/00 , B23K26/073
CPC分类号： H01L31/1852 , B23K26/073 , B23K26/082 , B23K26/352 , B23K26/354 , B23K2101/34 , B23K2101/40 , B23K2103/172 , B23K2103/56 , H01L21/02381 , H01L21/02532 , H01L21/02631 , H01L21/02683 , H01L21/02691 , H01L31/047 , H01L31/0687 , H01L31/0693 , H01L31/0725 , H01L31/0735 , H01L31/078 , Y02E10/544 , Y02P70/521
摘要： The present disclosure provides a method of manufacturing a semiconductor device. Furthermore the present disclosure provides a photovoltaic device and a light emitting diode manufactured in accordance with the method. The method comprises the steps of forming a germanium layer using deposition techniques compatible with high-volume, low-cost manufacturing, such as magnetron sputtering, and exposing the germanium layer to laser light to reduce the amount of defects in the germanium layer. After the method is performed the germanium layer can be used as a virtual germanium substrate for the growth of III-V materials.
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