公开(公告)号：US11844228B2

公开(公告)日：2023-12-12

申请号：US16598801

申请日：2019-10-10

Applicant: University of Central Florida Research Foundation, Inc.

Inventor： Tania Roy ,  Sonali Das

IPC: H10K30/87 ,  G02B5/30 ,  H01L31/108 ,  H01L31/20 ,  H01L31/0216 ,  C01B33/12 ,  H01L31/047

CPC classification number: H10K30/87 ,  C01B33/12 ,  G02B5/3008 ,  H01L31/02167 ,  H01L31/108 ,  H01L31/204 ,  C01P2004/64 ,  H01L31/047

Abstract: A leaf inspired biomimetic light trapping scheme for ultrathin flexible graphene silicon Schottky junction solar cell. An all-dielectric approach comprising of lossless silica and titania nanoparticles is used for mimicking the two essential light trapping mechanisms of a leaf: (1) focusing and waveguiding and (2) scattering. The light trapping scheme uses two optically tuned layers and does not require any nano-structuring of the active silicon substrate, thereby ensuring that the optical gain is not offset due to recombination losses.

公开(公告)号：US20230290894A1

公开(公告)日：2023-09-14

申请号：US17982984

申请日：2022-11-08

Applicant: Solar Inventions LLC

Inventor： Benjamin Mark Damiani

IPC: H01L31/047 ,  H01L31/0216 ,  H01L31/05 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/18 ,  H01L31/0475

CPC classification number: H01L31/047 ,  H01L31/02168 ,  H01L31/05 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/022433 ,  H01L31/03529 ,  H01L31/18 ,  H01L31/0475 ,  H02S20/23

Abstract: A photovoltaic cell may include a substrate configured as a single light absorption region. The cell may include at least one first semiconductor region and at least one second semiconductor region arranged on or in the substrate. The cell may include a plurality of first conductive contacts arranged on the substrate and physically separated from one another and a plurality of second conductive contacts arranged on the substrate and physically separated from one another. Each first conductive contact may be configured to facilitate electrical connection with the at least one first semiconductor region. Each second semiconductor conductive contact may be configured to facilitate electrical connection with the at least one second semiconductor region. Each of the first conductive contacts may form at least one separate cell partition with at least one of the second conductive contacts, thereby forming a plurality of cell partitions on or in the substrate.

公开(公告)号：US09954139B2

公开(公告)日：2018-04-24

申请号：US14780409

申请日：2014-03-26

Applicant: Soitec ,  Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V.

Inventor： Rainer Krause ,  Cecile Aulnette ,  Eric Mazaleyrat ,  Frank Dimroth ,  Eric Guiot

IPC: H01L33/00 ,  H01L21/67 ,  H01L21/683 ,  H01L31/18 ,  H01L31/02 ,  H01L31/028 ,  H01L21/762 ,  H01L31/047 ,  H01L31/024 ,  H01L31/0304

CPC classification number: H01L33/0079 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76251 ,  H01L21/76254 ,  H01L21/76275 ,  H01L31/02008 ,  H01L31/024 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/047 ,  H01L31/1876 ,  H01L31/1892 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2221/68386 ,  H01L2223/54426 ,  Y02E10/50 ,  Y02P70/521

Abstract: This disclosure is related to a manufacturing method for a plurality of photovoltaic cells comprising the steps of: obtaining a plurality of photovoltaic cells placed at a first distance from each other; attaching a stretching material to the plurality of photovoltaic cells; and stretching the stretching material such that the plurality of photovoltaic cells result at a second distance from each other, wherein the second distance is greater that the first distance.

公开(公告)号：US20180108525A1

公开(公告)日：2018-04-19

申请号：US15784891

申请日：2017-10-16

Applicant: Case Western Reserve University

Inventor： Hongping ZHAO ,  Subrina RAFIQUE ,  Lu HAN

IPC: H01L21/02 ,  H01L21/443 ,  C30B29/16 ,  C30B25/16

CPC classification number: H01L21/02565 ,  C30B25/02 ,  C30B25/16 ,  C30B29/16 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/02414 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0257 ,  H01L21/0262 ,  H01L21/443 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/872 ,  H01L31/032 ,  H01L31/047 ,  H01L31/103 ,  H01L31/18

Abstract: A method is disclosed for depositing a high-quality thin films of ultrawide bandgap oxide semiconductors at growth rates that are higher than possible using prior-art methods. Embodiments of the present invention employ LPCVD deposition using vapor formed by evaporating material as a precursor, where the material has a low vapor pressure at the growth temperature for the thin film. The vapor is carried to a reaction chamber by an inert gas, such as argon, where it mixes with a second precursor. The reaction chamber is held at a pressure that nucleation of the precursor materials occurs preferentially on the substrate surface rather than in vapor phase. The low vapor pressure of the material gives rise to growth rates on the substrate surface that a significantly faster than achievable using prior-art growth methods.

公开(公告)号：US09899551B2

公开(公告)日：2018-02-20

申请号：US14764599

申请日：2014-01-30

Applicant: BIG SOLAR LIMITED

Inventor： Alexander John Topping

IPC: H01L31/00 ,  H01L31/047 ,  H01L31/0352 ,  H01L31/05 ,  H01L31/18

CPC classification number: H01L31/047 ,  H01L31/035281 ,  H01L31/0504 ,  H01L31/18 ,  Y02E10/50

Abstract: An optoelectronic device comprising a substrate having a first and a second series of grooves and a channel therebetween. Each groove of the first and second series of grooves has a first and a second face and a cavity therebetween. The cavity is at least partially filled with a first semiconductor material. The first face is coated with a conductor material and the second face coated with a second semiconductor material. The channel transects the grooves of the first and second series of grooves. Also a method of producing an optoelectronic device.

公开(公告)号：US20180040649A1

公开(公告)日：2018-02-08

申请号：US15556542

申请日：2016-03-10

Applicant: The Regents of the University of California

Inventor： Shadi A. Dayeh ,  Yun Goo Ro ,  Namseok Park ,  Atsunori Tanaka ,  Siarhei Vishniakou ,  Ahmed Youssef ,  James Buckwalter ,  Cooper Levy

IPC: H01L27/142 ,  A61B5/00 ,  B81C1/00 ,  H01L31/042

CPC classification number: H01L27/142 ,  A61B5/0402 ,  A61B5/0476 ,  A61B5/0488 ,  A61B5/6802 ,  A61B2560/0214 ,  A61B2562/028 ,  A61B2562/125 ,  A61B2562/164 ,  B81B2201/0214 ,  B81C1/00238 ,  B81C2203/0792 ,  H01L31/035227 ,  H01L31/035281 ,  H01L31/042 ,  H01L31/047

Abstract: Methods and devices that monolithically integrate thin film elements/devices, e.g., environmental sensors, batteries and biosensors, with high performance integrated circuits, i.e., integrated circuits formed in a high quality device layer. Preferred embodiments further monolithically integrate a solar cell array. Preferred embodiments provide pin-size and integrated solar powered wearable electronic, ionic, molecular, radiation, etc. sensors and circuits.

公开(公告)号：US20170323996A1

公开(公告)日：2017-11-09

申请号：US15658756

申请日：2017-07-25

Applicant: SolAero Technologies Corp.

Inventor： Marvin Bradford Clevenger ,  Benjamin C. Richards ,  Cory Tourino ,  Lei Yang ,  Daniel Aiken ,  Daniel Derkacs ,  Philip E. Blumenfeld

IPC: H01L31/18 ,  H01L31/047 ,  H01L31/0443 ,  H01L31/0735 ,  H01L31/0687 ,  H01L31/049 ,  H01L31/05 ,  H01L31/0224 ,  H01L31/0203 ,  H01L21/66

CPC classification number: H01L31/1844 ,  H01L22/14 ,  H01L31/0203 ,  H01L31/022425 ,  H01L31/0443 ,  H01L31/047 ,  H01L31/049 ,  H01L31/0504 ,  H01L31/0508 ,  H01L31/0516 ,  H01L31/0687 ,  H01L31/06875 ,  H01L31/0735 ,  H01L31/1892 ,  Y02E10/544 ,  Y02P70/521

Abstract: The present disclosure provides methods of fabricating a multijunction solar cell panel in which one or more of the steps are performed using an automated process. In some embodiments, the automated process uses machine vision.

公开(公告)号：US09385251B2

公开(公告)日：2016-07-05

申请号：US13937729

申请日：2013-07-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun-hee Choi ,  Byoung-lyong Choi ,  Tae-ho Kim

IPC: H01L29/15 ,  H01L31/0256 ,  H01L31/0304 ,  H01L33/32 ,  H01L33/00 ,  H01L31/18 ,  H01L31/0352 ,  B82Y20/00 ,  H01L31/047 ,  H01L25/075 ,  H01L33/24 ,  H01L33/56

CPC classification number: H01L31/03044 ,  B82Y20/00 ,  H01L25/0753 ,  H01L31/035218 ,  H01L31/035236 ,  H01L31/03529 ,  H01L31/047 ,  H01L31/1848 ,  H01L31/1856 ,  H01L31/1892 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/24 ,  H01L33/32 ,  H01L33/56 ,  H01L2924/0002 ,  Y02E10/544 ,  Y02P70/521 ,  H01L2924/00

Abstract: A flexible semiconductor device and a method of manufacturing the flexible semiconductor device are provided. The flexible semiconductor device may include at least one vertical semiconductor element that is at least partly embedded in a flexible material layer. The flexible semiconductor device may further include a first electrode formed on a first surface of the flexible material layer and a second electrode formed on a second surface of the flexible material layer. A method of manufacturing a flexible semiconductor device may include separating a flexible material layer, in which the at least one vertical semiconductor element is embedded, from a substrate by weakening or degrading an adhesive force between an underlayer and a buffer layer by using a difference in coefficients of thermal expansion of the underlayer and the buffer layer.

Abstract translation: 提供了柔性半导体器件和制造柔性半导体器件的方法。 柔性半导体器件可以包括至少部分地嵌入柔性材料层中的至少一个垂直半导体元件。 柔性半导体器件还可以包括形成在柔性材料层的第一表面上的第一电极和形成在柔性材料层的第二表面上的第二电极。 制造柔性半导体器件的方法可以包括通过使用下层和缓冲层之间的差异来弱化或降低底层和缓冲层之间的粘合力来将其中嵌入至少一个垂直半导体元件的柔性材料层从衬底分离 底层和缓冲层的热膨胀系数。

公开(公告)号：US20160181457A1

公开(公告)日：2016-06-23

申请号：US14978726

申请日：2015-12-22

Applicant: COMMISSARIA À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Sébastien Dubois ,  Nicolas Enjalbert ,  Jean-Paul Garandet ,  Benoît Martel ,  Jordi Veirman

IPC: H01L31/0747 ,  H01L31/20

CPC classification number: H01L31/0747 ,  H01L21/761 ,  H01L31/0288 ,  H01L31/03529 ,  H01L31/047 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1868 ,  H01L31/202 ,  H01L31/208 ,  Y02E10/547 ,  Y02P70/521

Abstract: A process for fabricating a wafer of thickness, including at least (i) providing a monolithic substrate made of p-doped silicon; (ii) forming crystal defects in predefined portions of at least one of the sides of the substrate; (iii) subjecting the subject to a thermal anneal; (iv) bringing all or some of one of the sides of the substrate into contact with hydrogen; (v) if necessary, promoting the diffusion of the hydrogen; and (vi) subjecting the substrate to a heat treatment.

Abstract translation: 一种制造厚度晶片的方法，至少包括（i）提供由p掺杂硅制成的单片基板; （ii）在所述基板的至少一个侧面的预定部分中形成晶体缺陷; （iii）使受试者进行热退火; （iv）使基材的一侧的全部或一部分与氢接触; （v）如有必要，促进氢的扩散; 和（vi）对基材进行热处理。

公开(公告)号：US20160133773A1

公开(公告)日：2016-05-12

申请号：US14997564

申请日：2016-01-17

Applicant: AZUR SPACE Solar Power GMBH

Inventor： Matthias MEUSEL ,  Gerhard STROBL ,  Frank DIMROTH ,  Andreas BETT

IPC: H01L31/054 ,  H01L31/0304 ,  H01L31/0687 ,  H01L31/047

CPC classification number: H01L31/0725 ,  H01L31/02168 ,  H01L31/02327 ,  H01L31/03046 ,  H01L31/047 ,  H01L31/052 ,  H01L31/0547 ,  H01L31/056 ,  H01L31/0687 ,  H01L31/0735 ,  H01L31/074 ,  Y02E10/52 ,  Y02E10/544

Abstract: A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.

Abstract translation: 单片多重太阳能电池包括至少三个部分电池，半导体镜放置在两个部分电池之间。 本发明的目的是提高所述太阳能电池的辐射稳定性。 为此目的，半导体镜在部分单元的光谱吸收区域的至少一部分中具有高度反射，该区域单元布置在半导体反射镜上方，并且在部分单元的光谱吸收范围内的高透射率被布置 半导体镜下方。