公开(公告)号：US12018401B2

公开(公告)日：2024-06-25

申请号：US18067834

申请日：2022-12-19

Applicant: NGK Insulators, Ltd.

Inventor： Jun Yoshikawa ,  Miho Maeda ,  Hiroyuki Shibata

IPC: C30B29/16 ,  C30B7/10

CPC classification number: C30B29/16 ,  C30B7/10

Abstract: A gallium oxide single crystal particle according to the present invention is an α-Ga2O3 single crystal particle and has a diameter and a height that exceed 100 μm.

公开(公告)号：US12163252B2

公开(公告)日：2024-12-10

申请号：US17650672

申请日：2022-02-11

Applicant: NGK INSULATORS, LTD.

Inventor： Jun Yoshikawa ,  Miho Maeda

IPC: C30B7/10 ,  C30B29/16

Abstract: An α- or β-Ga2O3 crystal is produced by bringing an aqueous solution including a Ga ion into a supercritical state having a temperature of 400° C. or more and a pressure of 22.1 MPa or more.