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    Ground substrate and method for producing same
    1.
    发明授权
    Ground substrate and method for producing same 有权

    公开(公告)号：US12163249B2

    公开(公告)日：2024-12-10

    申请号：US17467895

    申请日：2021-09-07

    Applicant: NGK INSULATORS, LTD.

    Inventor： Morimichi Watanabe ,  Jun Yoshikawa

    IPC: C30B29/40 ,  C30B25/18 ,  C30B29/16 ,  H01L21/02 ,  H01L29/24

    Abstract: Provided is a base substrate including an orientation layer used for crystal growth of a nitride or oxide of a Group 13 element, in which a front surface on a side used for the crystal growth of the orientation layer is composed of a material having a corundum-type crystal structure having an a-axis length and/or c-axis length larger than that of sapphire, the orientation layer contains a material selected from the group consisting of α-Cr2O3, α-Fe2O3, α-Ti2O3, α-V2O3, and α-Rh2O3, or a solid solution containing two or more selected from the group consisting of α-Al2O3, α-Cr2O3, α-Fe2O3, α-Ti2O3, α-V2O3, and α-Rh2O3, and a half width of an X-ray rocking curve of a (104) plane of the corundum-type crystal structure is 500 arcsec. or less.

    Zinc oxide sintered body and method for producing same
    2.
    发明授权
    Zinc oxide sintered body and method for producing same 有权

    公开(公告)号：US10717679B2

    公开(公告)日：2020-07-21

    申请号：US15419092

    申请日：2017-01-30

    Applicant: NGK INSULATORS, LTD.

    Inventor： Sota Okochi ,  Jun Yoshikawa ,  Koichi Kondo

    IPC: H01B1/02 ,  C04B35/453 ,  C01G9/02 ,  B32B18/00 ,  C04B35/64 ,  C04B35/645

    Abstract: There is provided a platy zinc oxide sintered compact containing 0.80 wt % or less at least one first dopant element selected from the group consisting of Al, Ga and In, the balance consisting essentially of ZnO and optionally at least one second dopant element selected from the group consisting of Br, Cl, F, Sn, Y, Pr, Ge, B, Sc, Si, Ti, Zr, Hf, Mn, Ta, W, Cu, Ni, Cr, La, Gd, Bi, Ce, Sr and Ba, the second dopant element being optional component, wherein the (002)-plane orientation in the plate surface is 60% or more. The zinc oxide sintered compact of the present invention has excellent properties such as high orientation in addition to transparency and conductivity.

    Polycrystalline gallium-nitride self-supporting substrate and light-emitting element using same
    5.
    发明授权
    Polycrystalline gallium-nitride self-supporting substrate and light-emitting element using same 有权
    多晶氮化镓自支撑基板和使用其的发光元件

    公开(公告)号：US09543473B2

    公开(公告)日：2017-01-10

    申请号：US15072745

    申请日：2016-03-17

    Applicant: NGK INSULATORS, LTD.

    Inventor： Morimichi Watanabe ,  Jun Yoshikawa ,  Yoshitaka Kuraoka ,  Tsutomu Nanataki

    IPC: H01L33/18 ,  H01L33/32 ,  H01L33/00 ,  H01L33/16 ,  C30B9/12 ,  C30B19/02 ,  C30B19/12 ,  C30B29/40 ,  C30B25/18 ,  C30B28/04 ,  C30B29/60 ,  C30B9/00 ,  C30B25/20

    CPC classification number: H01L33/18 ,  C30B9/00 ,  C30B9/12 ,  C30B19/02 ,  C30B19/12 ,  C30B25/18 ,  C30B25/20 ,  C30B28/04 ,  C30B29/406 ,  C30B29/605 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32

    Abstract: Provided is a self-supporting polycrystalline GaN substrate composed of GaN-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate. The crystal orientations of individual GaN-based single crystal grains as determined from inverse pole figure mapping by EBSD analysis on the substrate surface are distributed with tilt angles from the specific crystal orientation, the average tilt angle being 1 to 10°. There is also provided a light emitting device including the self-supporting substrate and a light emitting functional layer, which has at least one layer composed of semiconductor single crystal grains, the at least one layer having a single crystal structure in the direction approximately normal to the substrate. The present invention makes it possible to provide a self-supporting polycrystalline GaN substrate having a reduced defect density at the substrate surface, and to provide a light emitting device having a high luminous efficiency.

    Abstract translation: 本发明提供一种由大致垂直于基板的方向具有特定结晶取向的GaN系单晶粒构成的自支撑多晶GaN衬底。 通过在基板表面上的EBSD分析的反极图映射确定的单个GaN基单晶晶粒的晶体取向以特定晶体取向倾斜角分布，平均倾斜角为1至10°。 还提供了一种包括自支撑基板和发光功能层的发光器件，该发光功能层具有至少一层由半导体单晶晶粒构成的层，所述至少一层具有大致垂直于 底物。 本发明使得可以提供在衬底表面上具有降低的缺陷密度的自支撑多晶GaN衬底，并且提供具有高发光效率的发光器件。

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