MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS

    公开(公告)号:US20240186170A1

    公开(公告)日:2024-06-06

    申请号:US18346951

    申请日:2023-07-05

    CPC classification number: H01L21/6833

    Abstract: A member for a semiconductor manufacturing apparatus includes: a ceramic plate that has a wafer placement surface at an upper surface thereof; a plug disposition hole that extends through the ceramic plate in an up-down direction and that has a truncated conical space whose upper opening is larger than a lower opening thereof; a truncated conical plug that is disposed in the plug disposition hole, that allows gas to flow in the up-down direction, and whose upper surface is larger than a lower surface thereof; an adhesive layer that is provided between the plug disposition hole and the truncated conical plug; an electrically conductive baseplate that is joined to a lower surface of the ceramic plate through a joint layer; and a gas supply path that is provided in the baseplate and the joint layer and that supplies gas to the truncated conical plug.

    MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS

    公开(公告)号:US20250149368A1

    公开(公告)日:2025-05-08

    申请号:US18651927

    申请日:2024-05-01

    Abstract: A member for semiconductor manufacturing apparatus includes: a ceramic plate having a wafer placement surface on its upper surface and a built-in electrode; a base plate provided on a lower surface of the ceramic plate; a base plate through-hole that penetrates the base plate in an up-down direction; an insulating tube inserted into the base plate through-hole; an adhesive agent pool provided in at least one of an inner circumferential surface of the base plate through-hole or an outer circumferential surface of the insulating tube, and disposed at a position down away from an upper surface of the insulating tube; and an adhesive layer including an insulating tube outer circumferential surface adhesion part formed from the lower surface of the ceramic plate to an intermediate point of the adhesive agent pool.

    WAFER PLACEMENT TABLE
    3.
    发明申请

    公开(公告)号:US20240412998A1

    公开(公告)日:2024-12-12

    申请号:US18581577

    申请日:2024-02-20

    Abstract: A wafer placement table includes: a ceramic plate having a wafer placement surface on its upper surface; a cooling plate provided on a lower surface of the ceramic plate; and a refrigerant flow path provided inside the cooling plate, wherein the refrigerant flow path includes a first portion and a second portion, the second portion continuing from the first portion and being divided into two or more ways forming branches that run side by side, and wherein the first portion has a cross-sectional area smaller than a sum of cross-sectional areas of the respective branches included in the second portion.

    WAFER PLACEMENT TABLE
    4.
    发明公开

    公开(公告)号:US20240355656A1

    公开(公告)日:2024-10-24

    申请号:US18476701

    申请日:2023-09-28

    Abstract: A wafer placement table includes: a ceramic plate having a wafer placement surface, a cooling plate having a refrigerant flow path and being provided on a lower surface-side of the ceramic plate; a first ceramic plate penetration section that reaches the wafer placement surface; a second ceramic plate penetration section that reaches the wafer placement surface; a first gas passage that communicates with the first ceramic plate penetration section; and a second gas passage that communicates with the second ceramic plate penetration section. The first gas passage has a first gas intermediate passage, the second gas passage has a second gas intermediate passage, the second gas intermediate passage is provided above the first gas intermediate passage, and the refrigerant flow path has a first flow path section provided above the first gas intermediate passage, and a second flow path section provided below the second gas intermediate passage.

    WAFER PLACEMENT TABLE
    5.
    发明公开

    公开(公告)号:US20240079218A1

    公开(公告)日:2024-03-07

    申请号:US18168810

    申请日:2023-02-14

    Abstract: A wafer placement table includes an upper substrate; a lower substrate; a through hole extending through the lower substrate in an up-down direction; a plurality of projections provided in a dot pattern, for example, at an entirety of an upper surface of the lower substrate and being in contact with the lower surface of the upper substrate; a heat dissipation sheet having a projection insertion hole and being disposed between the upper substrate and the lower substrate; a screw hole provided, in the lower surface of the upper substrate, at a position facing the through hole; a screw member inserted from a lower surface of the lower substrate into the through hole and screwed into the screw hole; and a thermally conductive paste interposed, for example, between side surfaces of the projections and an inner peripheral surface of the projection insertion hole of the heat dissipation sheet.

    MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS

    公开(公告)号:US20250125125A1

    公开(公告)日:2025-04-17

    申请号:US18652975

    申请日:2024-05-02

    Abstract: A member for semiconductor manufacturing apparatus includes: a ceramic plate having a wafer placement surface on an upper surface and a built-in electrode; a base plate provided on a lower surface of the ceramic plate, and configured to include built-in refrigerant flow paths; a through-hole that penetrates the base plate in an up-down direction; an insulating tube inserted into the through-hole; and a resin-containing adhesive layer provided at least one of between an upper surface of the insulating tube and a lower surface of the ceramic plate or between an outer circumferential surface of the insulating tube and an inner circumferential surface of the through-hole, and configured to fix the insulating tube. A thermal conductivity of the insulating tube is less than or equal to 10 W/mK.

    WAFER PLACEMENT TABLE
    7.
    发明公开

    公开(公告)号:US20240297062A1

    公开(公告)日:2024-09-05

    申请号:US18582759

    申请日:2024-02-21

    CPC classification number: H01L21/6833

    Abstract: A wafer placement table includes a ceramic plate having a wafer placement surface on its top surface and incorporating an electrode; an electrically conductive plate joined to a bottom surface of the ceramic plate; a ceramic plate penetrating part extending through the ceramic plate; an electrically insulating gas passage plug provided in the ceramic plate penetrating part and that allows gas to pass inside; a gas introduction passage provided at least inside the electrically conductive plate and communicating with the ceramic plate penetrating part; and an electrically conductive gas passage part provided in the gas introduction passage, being in contact with a bottom surface of the electrically insulating gas passage plug, being electrically continuous with the electrically conductive plate, and that allows gas to pass inside.

    MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS

    公开(公告)号:US20240153809A1

    公开(公告)日:2024-05-09

    申请号:US18302981

    申请日:2023-04-19

    CPC classification number: H01L21/6833 H01L21/67103

    Abstract: A member for a semiconductor manufacturing apparatus includes a ceramic plate; a composite plate joined to a lower surface of the ceramic plate; a cooling plate formed of a metal material, disposed on a lower surface of the composite plate; a first fastener that fastens the composite plate and the cooling plate; a support plate that is formed of an insulating material and supports a lower surface of the cooling plate; and a second fastener that fastens the cooling plate and the support plate, wherein, when the ceramic plate is heated from room temperature to high temperature, a first layered body including the ceramic plate and the composite plate deforms such that a central portion of the first layered body is convex, and a second layered body including the cooling plate and the support plate deforms such that a central portion of the second layered body is convex.

    MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS

    公开(公告)号:US20250149369A1

    公开(公告)日:2025-05-08

    申请号:US18669836

    申请日:2024-05-21

    Abstract: A member for semiconductor manufacturing apparatus includes a ceramic plate having a wafer placement surface on its upper surface and a built-in electrode; a base plate provided on a lower surface of the ceramic plate; a base plate through-hole that penetrates the base plate in an up-down direction; an insulating tube inserted into the base plate through-hole; an adhesive layer including an insulating tube upper surface adhesion part and an insulating tube outer circumferential surface adhesion part; and a positioning structure configured to perform positioning so that a distance between the lower surface of the ceramic plate and the upper surface of the insulating tube reaches a predetermined distance.

    MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS

    公开(公告)号:US20250132184A1

    公开(公告)日:2025-04-24

    申请号:US18638984

    申请日:2024-04-18

    Abstract: A member for semiconductor manufacturing apparatus includes a ceramic plate having a wafer placement surface on an upper surface and a built-in electrode; a base plate provided on a lower surface of the ceramic plate, and configured to include a built-in refrigerant flow path; a base plate through-hole provided between adjacent parts of the refrigerant flow path, and configured to penetrate the base plate in an up-down direction; an insulating tube provided in the base plate through-hole, and fixed; and a ceramic plate hole open to the lower surface of the ceramic plate, and provided to communicate with an inside of the insulating tube, wherein a wall thickness of the insulating tube continuously varies in a circumferential direction of the insulating tube.

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