公开(公告)号：US20190259909A1

公开(公告)日：2019-08-22

申请号：US16279981

申请日：2019-02-19

Applicant: NICHIA CORPORATION

Inventor： Takamasa SUNDA ,  Hitoshi NAGAI

IPC: H01L33/10 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/46 ,  H01L33/60 ,  H01L27/15

Abstract: A light emitting element includes: a substrate including a first surface including a first region and a second region; a first semiconductor layered body on the first region of the first surface of the substrate; and a second semiconductor layered body on the second region of the first surface of the substrate. A first angle defined by a first lateral surface of the first semiconductor layered body and the first region is smaller than a second angle defined by a second lateral surface of the first semiconductor layered body and the first region. A fourth angle defined by a second lateral surface of the second semiconductor layered body and the second region is smaller than a third angle defined by a first lateral surface of the second semiconductor layered body and the second region.

公开(公告)号：US20210111307A1

公开(公告)日：2021-04-15

申请号：US17129322

申请日：2020-12-21

Applicant: NICHIA CORPORATION

Inventor： Takamasa SUNDA ,  Hitoshi NAGAI

IPC: H01L33/10 ,  H01L33/24 ,  H01L33/32 ,  H01L27/15 ,  H01L33/46 ,  H01L33/60 ,  H01L33/38

Abstract: A light emitting element includes: a substrate including a first surface including a first region and a second region; a first semiconductor layered body on the first region, the first semiconductor layered body comprising a first light emitting layer and including: a first lateral surface, and a second lateral surface opposite to the first lateral surface; and a second semiconductor layered body on the second region, the second semiconductor layered body comprising a second light emitting layer and including: a first lateral surface facing the second lateral surface and located on a first semiconductor layered body side of the second semiconductor layered body, and a second lateral surface opposite to the first lateral surface and located on a side opposite the first semiconductor layered body side of the second semiconductor layered body.