公开(公告)号：US20150118775A1

公开(公告)日：2015-04-30

申请号：US14526740

申请日：2014-10-29

Applicant: NICHIA CORPORATION

Inventor： Junya NARITA ,  Yohei WAKAI ,  Kazuto OKAMOTO ,  Mizuki NISHIOKA

IPC: H01L33/00

CPC classification number: H01L33/0095

Abstract: A method of manufacturing a nitride semiconductor element includes preparing a wafer having a nitride semiconductor layer which includes p-type dopants, forming an altered portion by condensing laser beam on the wafer, and after the forming an altered portion, forming a p-type nitride semiconductor layer by subjecting the wafer to annealing.

Abstract translation: 制造氮化物半导体元件的方法包括：准备具有氮化物半导体层的晶片，所述氮化物半导体层包含p型掺杂剂，通过将激光束聚焦在晶片上形成改变部分，并且在形成改变部分之后，形成p型氮化物 半导体层通过使晶片退火。