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    METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
    1.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT 审中-公开
    制造半导体元件的方法

    公开(公告)号：US20170005225A1

    公开(公告)日：2017-01-05

    申请号：US15196787

    申请日：2016-06-29

    Applicant: NICHIA CORPORATION

    Inventor： Hiroki OKAMOTO ,  Hiroaki TAMEMOTO ,  Junya NARITA

    IPC: H01L33/00 ,  H01L33/16 ,  H01L21/683 ,  H01L29/04 ,  H01L21/78 ,  H01L21/304

    CPC classification number: H01L33/0095 ,  H01L21/304 ,  H01L21/6835 ,  H01L21/78 ,  H01L29/04 ,  H01L2221/68327

    Abstract: A method for manufacturing a semiconductor element is provided. The method includes providing a semiconductor wafer including a substrate and a semiconductor structure on the substrate, forming a cleavage starting portion in the semiconductor wafer, and dividing the semiconductor wafer into a plurality of semiconductor elements by transferring a pressing member on the semiconductor wafer in a state where the pressing member is pressed against the semiconductor wafer to separate the semiconductor wafer at the cleavage starting portion. The pressing member includes a tip portion to be pressed on the semiconductor wafer, and the tip portion has a spherical surface.

    Abstract translation: 提供一种半导体元件的制造方法。 该方法包括在衬底上提供包括衬底和半导体结构的半导体晶片，在半导体晶片中形成切割起始部分，并将半导体晶片分成多个半导体元件，通过在半导体晶片上传送加压构件 其中按压构件被压靠在半导体晶片上以在切割起始部分分离半导体晶片。 按压构件包括被压在半导体晶片上的尖端部分，并且尖端部分具有球形表面。

    METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT
    4.
    发明申请
    METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT 有权
    制造发光元件的方法

    公开(公告)号：US20160284944A1

    公开(公告)日：2016-09-29

    申请号：US15079052

    申请日：2016-03-24

    Applicant: NICHIA CORPORATION

    Inventor： Junya NARITA ,  Takuya OKADA

    IPC: H01L33/48

    CPC classification number: B23K26/40 ,  H01L33/005 ,  H01L33/0095 ,  H01L33/32

    Abstract: A method of manufacturing a light emitting element includes providing a wafer having a substrate and a semiconductor layered body provided on an upper surface of the substrate, irradiating the substrate with laser light from a side of a lower surface opposite to the upper surface of the substrate to form modified regions in the substrate, and dividing the wafer into light emitting elements at the modified regions as a starting point. The semiconductor layered body includes a first p-type semiconductor layer made of a nitride semiconductor and provided on the upper surface of the substrate, an n-type semiconductor layer made of a nitride semiconductor and provided on the first p-type semiconductor layer, an active layer made of a nitride semiconductor and provided on the n-type semiconductor layer, and a second p-type semiconductor layer made of a nitride semiconductor and provided on the active layer.

    Abstract translation: 一种制造发光元件的方法包括提供具有衬底的晶片和设置在衬底的上表面上的半导体层叠体，用与来自衬底的上表面相对的下表面侧的激光照射衬底 以在衬底中形成改质区域，并且将晶片分为修饰区域的发光元件作为起始点。 半导体层叠体包括由氮化物半导体构成的第一p型半导体层，设置在基板的上表面，由氮化物半导体构成的n型半导体层，设置在第一p型半导体层上， 由氮化物半导体制成的有源层，设置在n型半导体层上，第二p型半导体层由氮化物半导体构成，设置在有源层上。

    LIGHT-EMITTING DEVICE
    5.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20160233388A1

    公开(公告)日：2016-08-11

    申请号：US15015130

    申请日：2016-02-04

    Applicant: NICHIA CORPORATION

    Inventor： Hirofumi ICHIKAWA ,  Motohisa KITANI ,  Junya NARITA ,  Keisuke KURASHITA ,  Takanori AKAISHI

    IPC: H01L33/48 ,  H01L25/075 ,  H01L33/62 ,  H01L33/20 ,  H01L33/56

    CPC classification number: H01L33/505 ,  H01L25/0753 ,  H01L33/20 ,  H01L33/38 ,  H01L33/486 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

    Abstract: A light-emitting device includes a package and at least one light-emitting element. The package includes a concave portion which has a bottom surface. The bottom surface includes sides, package distances between opposite sides among the sides, a longest package distance among the package distances, a lower side among the sides, and an upper side among the sides opposite to the lower side. The at least one light-emitting element is arranged on the bottom surface of the concave portion and has a polygonal shape viewed along a front direction. The polygonal shape has light-emitting element distances between vertexes of the polygonal shape and has a longest light-emitting element distance among the light-emitting element distances. The at least one light-emitting element is arranged such that a light-emitting element lateral line along the longest light-emitting element distance is substantially parallel to a package lateral line along the longest package distance.

    Abstract translation: 发光器件包括封装和至少一个发光元件。 该包装包括具有底面的凹部。 底面包括侧面，侧面之间的相对侧之间的包装间距，包装间距中最长的包装距离，侧面之间的下侧以及与下侧相反的侧面中的上侧。 所述至少一个发光元件设置在所述凹部的底面上，具有沿前方观察的多边形。 多边形具有多边形顶点之间的发光元件距离，并且在发光元件距离之间具有最长的发光元件距离。 所述至少一个发光元件被布置成使得沿着最长发光元件距离的发光元件横向线沿着最长的封装距离基本上平行于封装横向线。

    SAPPHIRE SUBSTRATE AND SEMICONDUCTOR LIGHT EMITTING DEVICE
    6.
    发明申请
    SAPPHIRE SUBSTRATE AND SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    SAPPHIRE基板和半导体发光器件

    公开(公告)号：US20130270593A1

    公开(公告)日：2013-10-17

    申请号：US13831211

    申请日：2013-03-14

    Applicant: NICHIA CORPORATION

    Inventor： Junya NARITA ,  Takuya OKADA ,  Yohei WAKAI ,  Yoshiki INOUE ,  Naoya SAKO ,  Katsuyoshi KADAN

    IPC: H01L33/10

    CPC classification number: H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  Y10T428/24 ,  Y10T428/24479

    Abstract: A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.

    Abstract translation: 具有用于生长氮化物半导体以形成氮化物半导体发光器件的主表面的蓝宝石衬底包括主表面上的多个突起。 每个突起具有基本上多边形的底部。 突起的底部的每一侧在其中心具有凹陷。 各个突起的底部的顶点在与蓝宝石基板的晶轴“a”顺时针旋转30度的方向的±10度的范围内延伸。

    LIGHT EMITTING ELEMENT
    7.
    发明申请
    LIGHT EMITTING ELEMENT 有权

    公开(公告)号：US20210296526A1

    公开(公告)日：2021-09-23

    申请号：US17338446

    申请日：2021-06-03

    Applicant: NICHIA CORPORATION

    Inventor： Shun KITAHAMA ,  Yoshiki INOUE ,  Kazuhiro NAGAMINE ,  Junya NARITA

    IPC: H01L33/00 ,  H01L33/44 ,  H01L33/38 ,  H01L33/14 ,  H01L33/32

    Abstract: A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer located on the substrate, and a p-side nitride semiconductor layer located on the n-side nitride semiconductor layer, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; a first protective layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer; and a current diffusion layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the area inside of the peripheral portion. The current diffusion layer does not overlap the first protective layer in a top view.

    LIGHT EMITTING ELEMENT
    8.
    发明申请
    LIGHT EMITTING ELEMENT 审中-公开

    公开(公告)号：US20200075797A1

    公开(公告)日：2020-03-05

    申请号：US16677287

    申请日：2019-11-07

    Applicant: NICHIA CORPORATION

    Inventor： Shun KITAHAMA ,  Yoshiki INOUE ,  Kazuhiro NAGAMINE ,  Junya NARITA

    IPC: H01L33/00 ,  H01L33/44 ,  H01L33/38 ,  H01L33/14 ,  H01L33/32

    Abstract: A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer containing an n-type impurity and located on the substrate, and a p-side nitride semiconductor layer containing a p-type impurity and located on the n-side nitride semiconductor layer, wherein a resistance of a peripheral portion of the p-side nitride semiconductor layer is higher than a resistance of an area inside of the peripheral portion in a top view, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; and first protective layer located on an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer.

    METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR ELEMENT
    10.
    发明申请
    METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR ELEMENT 有权
    制备氮化物半导体元件的方法

    公开(公告)号：US20150118775A1

    公开(公告)日：2015-04-30

    申请号：US14526740

    申请日：2014-10-29

    Applicant: NICHIA CORPORATION

    Inventor： Junya NARITA ,  Yohei WAKAI ,  Kazuto OKAMOTO ,  Mizuki NISHIOKA

    IPC: H01L33/00

    CPC classification number: H01L33/0095

    Abstract: A method of manufacturing a nitride semiconductor element includes preparing a wafer having a nitride semiconductor layer which includes p-type dopants, forming an altered portion by condensing laser beam on the wafer, and after the forming an altered portion, forming a p-type nitride semiconductor layer by subjecting the wafer to annealing.

    Abstract translation: 制造氮化物半导体元件的方法包括：准备具有氮化物半导体层的晶片，所述氮化物半导体层包含p型掺杂剂，通过将激光束聚焦在晶片上形成改变部分，并且在形成改变部分之后，形成p型氮化物 半导体层通过使晶片退火。

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