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    SEMICONDUCTOR LIGHT EMITTING DEVICE
    2.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    半导体发光器件

    公开(公告)号：US20160329465A1

    公开(公告)日：2016-11-10

    申请号：US15216402

    申请日：2016-07-21

    Applicant: NICHIA CORPORATION

    Inventor： Yohei WAKAI ,  Masahiko ONISHI

    IPC: H01L33/22 ,  H01L33/14 ,  H01L33/00 ,  H01L33/44 ,  H01L33/38 ,  H01L33/06 ,  H01L33/32

    CPC classification number: H01L33/22 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/145 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/44 ,  H01L33/58 ,  H01L2933/0083

    Abstract: A semiconductor light emitting device which includes at least one concave on a light extraction surface opposite to a surface on which a semiconductor stack comprising a light emitting layer between a n-type semiconductor layer and a p-type semiconductor layer is mounted. The concave has not less than two slopes each having a different slope angle in a direction that a diameter of the concave becomes narrower toward a bottom of the concave from an opening of the concave and a slope having a gentle slope angle is provided with irregularities and a slope having a steep slope angle is a flat surface.

    Abstract translation: 一种半导体发光器件，其包括在与其上包括在n型半导体层和p型半导体层之间的发光层的半导体叠层的表面相反的光提取表面上的至少一个凹部。 凹部具有不小于两个斜面，每个斜面在凹部的直径从凹部的开口朝向凹部的凹部变窄的方向上具有不同的倾斜角度，并且具有平缓的倾斜角度的斜面具有不规则性，并且 具有陡峭倾斜角的斜面是平坦表面。

    METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR ELEMENT
    5.
    发明申请
    METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR ELEMENT 有权
    制备氮化物半导体元件的方法

    公开(公告)号：US20150118775A1

    公开(公告)日：2015-04-30

    申请号：US14526740

    申请日：2014-10-29

    Applicant: NICHIA CORPORATION

    Inventor： Junya NARITA ,  Yohei WAKAI ,  Kazuto OKAMOTO ,  Mizuki NISHIOKA

    IPC: H01L33/00

    CPC classification number: H01L33/0095

    Abstract: A method of manufacturing a nitride semiconductor element includes preparing a wafer having a nitride semiconductor layer which includes p-type dopants, forming an altered portion by condensing laser beam on the wafer, and after the forming an altered portion, forming a p-type nitride semiconductor layer by subjecting the wafer to annealing.

    Abstract translation: 制造氮化物半导体元件的方法包括：准备具有氮化物半导体层的晶片，所述氮化物半导体层包含p型掺杂剂，通过将激光束聚焦在晶片上形成改变部分，并且在形成改变部分之后，形成p型氮化物 半导体层通过使晶片退火。

    Method for manufacturing semiconductor light emitting device
    6.
    发明申请
    Method for manufacturing semiconductor light emitting device 有权

    公开(公告)号：US20140038328A1

    公开(公告)日：2014-02-06

    申请号：US14021551

    申请日：2013-09-09

    Applicant: Nichia Corporation

    Inventor： Yohei WAKAI ,  Hiroaki MATSUMURA ,  Kenji OKA

    IPC: H01L33/22 ,  H01L33/00

    CPC classification number: H01L33/005 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/36 ,  H01L33/382 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0058

    Abstract: A semiconductor light emitting device having high reliability and excellent light distribution characteristics can be provided with an n-electrode arranged on a light extraction surface on the side opposite to the surface whereupon a semiconductor stack is mounted on a substrate. A plurality of convexes are arranged on a first convex region and a second convex region on the light extraction surface. The second convex region adjoins the interface between the n-electrode and the semiconductor stack, between the first convex region and the n-electrode. The base end of the first convex arranged in the first convex region is positioned closer to a light emitting layer than the interface between the n-electrode and the semiconductor stack, and the base end of the second convex arranged in the second convex region is positioned closer to the interface between the n-electrode and the semiconductor stack than the base end of the first convex.

    SAPPHIRE SUBSTRATE AND SEMICONDUCTOR
    7.
    发明申请
    SAPPHIRE SUBSTRATE AND SEMICONDUCTOR 有权
    SAPPHIRE底物和半导体

    公开(公告)号：US20130285109A1

    公开(公告)日：2013-10-31

    申请号：US13831138

    申请日：2013-03-14

    Applicant: NICHIA CORPORATION

    Inventor： Junya NARITA ,  Takuya OKADA ,  Yohei WAKAI ,  Yoshiki INOUE ,  Naoya SAKO ,  Katsuyoshi KADAN

    IPC: H01L33/20

    CPC classification number: H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  Y10T428/24 ,  Y10T428/24479

    Abstract: A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated counter-clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.

    Abstract translation: 具有用于生长氮化物半导体以形成氮化物半导体发光器件的主表面的蓝宝石衬底包括主表面上的多个突起。 每个突起具有基本上多边形的底部。 突起的底部的每一侧在其中心具有凹陷。 相应突起的底部的顶点在与蓝宝石基板的晶轴“a”逆时针旋转30度的方向的±10度的范围内延伸。

    METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE
    8.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    制造半导体发光器件的方法

    公开(公告)号：US20140370630A1

    公开(公告)日：2014-12-18

    申请号：US14470565

    申请日：2014-08-27

    Applicant: NICHIA CORPORATION

    Inventor： Yohei WAKAI ,  Hiroaki MATSUMURA ,  Kenji OKA

    IPC: H01L33/00

    CPC classification number: H01L33/005 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/36 ,  H01L33/382 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0058

    Abstract: A semiconductor light emitting device having high reliability and excellent light distribution characteristics can be provided with an n-electrode arranged on a light extraction surface on the side opposite to the surface whereupon a semiconductor stack is mounted on a substrate. A plurality of convexes are arranged on a first convex region and a second convex region on the light extraction surface. The second convex region adjoins the interface between the n-electrode and the semiconductor stack, between the first convex region and the n-electrode. The base end of the first convex arranged in the first convex region is positioned closer to a light emitting layer than the interface between the n-electrode and the semiconductor stack, and the base end of the second convex arranged in the second convex region is positioned closer to the interface between the n-electrode and the semiconductor stack than the base end of the first convex.

    Abstract translation: 可以提供具有高可靠性和优异的配光特性的半导体发光器件，其配置在与衬底上安装有半导体叠层的表面相反的一侧上的光提取表面上的n电极。 多个凸起布置在光提取表面上的第一凸区域和第二凸区域上。 第二凸区域与第一凸区域和n电极之间的n电极和半导体堆叠体之间的界面相邻。 布置在第一凸区域中的第一凸部的基端位于比n电极和半导体叠层之间的界面更靠近发光层的位置，并且布置在第二凸区域中的第二凸起的基端位于 比第一凸起的基端更靠近n电极和半导体叠层之间的界面。

    SAPPHIRE SUBSTRATE AND SEMICONDUCTOR LIGHT EMITTING DEVICE
    9.
    发明申请
    SAPPHIRE SUBSTRATE AND SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    SAPPHIRE基板和半导体发光器件

    公开(公告)号：US20130270593A1

    公开(公告)日：2013-10-17

    申请号：US13831211

    申请日：2013-03-14

    Applicant: NICHIA CORPORATION

    Inventor： Junya NARITA ,  Takuya OKADA ,  Yohei WAKAI ,  Yoshiki INOUE ,  Naoya SAKO ,  Katsuyoshi KADAN

    IPC: H01L33/10

    CPC classification number: H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  Y10T428/24 ,  Y10T428/24479

    Abstract: A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.

    Abstract translation: 具有用于生长氮化物半导体以形成氮化物半导体发光器件的主表面的蓝宝石衬底包括主表面上的多个突起。 每个突起具有基本上多边形的底部。 突起的底部的每一侧在其中心具有凹陷。 各个突起的底部的顶点在与蓝宝石基板的晶轴“a”顺时针旋转30度的方向的±10度的范围内延伸。

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