公开(公告)号：US20180062032A1

公开(公告)日：2018-03-01

申请号：US15688057

申请日：2017-08-28

Applicant: NICHIA CORPORATION

Inventor： Kazuto OKAMOTO

IPC: H01L33/08 ,  H01L33/20

CPC classification number: H01L33/08 ,  H01L33/20

Abstract: A method of manufacturing a light emitting device includes preparing a wafer having a sapphire substrate with semiconductor structures, forming a plurality of straight-line cleavage starting portions within the substrate by scanning a laser beam, and cleaving the wafer along the cleavage starting portions to obtain a plurality of light emitting devices each having a hexagonal shape. The forming step includes forming first cleavage starting portions with each first cleavage starting portion separated by a first interval from a common vertex point of three adjacent light emitting devices, forming second cleavage starting portions with each first cleavage starting portion separated by a second interval, which is shorter than the first interval, away from the common vertex point, and forming third cleavage starting portions with each first cleavage starting portion separated by a third interval, which is shorter than the first interval, away from the common vertex point.

公开(公告)号：US20150118775A1

公开(公告)日：2015-04-30

申请号：US14526740

申请日：2014-10-29

Applicant: NICHIA CORPORATION

Inventor： Junya NARITA ,  Yohei WAKAI ,  Kazuto OKAMOTO ,  Mizuki NISHIOKA

IPC: H01L33/00

CPC classification number: H01L33/0095

Abstract: A method of manufacturing a nitride semiconductor element includes preparing a wafer having a nitride semiconductor layer which includes p-type dopants, forming an altered portion by condensing laser beam on the wafer, and after the forming an altered portion, forming a p-type nitride semiconductor layer by subjecting the wafer to annealing.

Abstract translation: 制造氮化物半导体元件的方法包括：准备具有氮化物半导体层的晶片，所述氮化物半导体层包含p型掺杂剂，通过将激光束聚焦在晶片上形成改变部分，并且在形成改变部分之后，形成p型氮化物 半导体层通过使晶片退火。

公开(公告)号：US20130256739A1

公开(公告)日：2013-10-03

申请号：US13850614

申请日：2013-03-26

Applicant: NICHIA CORPORATION

Inventor： Yoshikazu MATSUDA ,  Kazuto OKAMOTO

IPC: H01L33/32 ,  H01L33/00

CPC classification number: H01L33/642 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/32 ,  H01L33/40 ,  H01L33/60 ,  H01L33/641

Abstract: Disclosed is a vertical nitride semiconductor device including a conductive substrate; a semiconductor layer bonded to the conductive substrate via a second electrode; a metal layer formed on the conductive substrate; a first electrode formed on the semiconductor layer; and a bonding layer formed between the conductive substrate and the second electrode. The conductive substrate has a flange part, which extends from a side surface of the conductive substrate, on a side of the other front surface thereof. The flange part is formed in a manner in which the conductive substrate and the semiconductor layer are bonded together and then a remaining part of the conductive substrate is divided, the remaining part being formed by cutting off the semiconductor layer and part of the conductive substrate in a thickness direction so as to expose a side surface of the semiconductor layer and the side surface of the conductive substrate.

公开(公告)号：US20160086927A1

公开(公告)日：2016-03-24

申请号：US14857944

申请日：2015-09-18

Applicant: NICHIA CORPORATION

Inventor： Shimpei SASAOKA ,  Kazuto OKAMOTO

IPC: H01L25/075 ,  H01L33/52 ,  H01L33/48 ,  H01L33/50

CPC classification number: H01L25/0753 ,  H01L33/508 ,  H01L2224/16225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light emitting device includes a base, a first light emitting element, a second light emitting element, and a sealing member. The first light emitting element has an active layer of a nitride semiconductor and has a first emission peak wavelength in a blue region. The second light emitting element has an active layer of a nitride semiconductor and has a second emission peak wavelength longer than the first emission peak wavelength of the first light emitting element. The sealing member includes a first region and a second region. The first region contains a phosphor to be excited by light from the first light emitting element. The first region is provided on an element mounting surface. A first upper surface of the first light emitting element is located in the first region. The second region does not substantially contain the phosphor and is provided on the first region.

Abstract translation: 发光器件包括基底，第一发光元件，第二发光元件和密封元件。 第一发光元件具有氮化物半导体的有源层，并且在蓝色区域中具有第一发光峰值波长。 第二发光元件具有氮化物半导体的有源层，并且具有比第一发光元件的第一发光峰值波长长的第二发光峰值波长。 密封构件包括第一区域和第二区域。 第一区域包含要被来自第一发光元件的光激发的荧光体。 第一区域设置在元件安装表面上。 第一发光元件的第一上表面位于第一区域中。 第二区域基本上不含荧光体，并且设置在第一区域上。

公开(公告)号：US20150357539A1

公开(公告)日：2015-12-10

申请号：US14826283

申请日：2015-08-14

Applicant: NICHIA CORPORATION

Inventor： Yoshikazu MATSUDA ,  Kazuto OKAMOTO

IPC: H01L33/64 ,  H01L33/40 ,  H01L33/60 ,  H01L33/32

CPC classification number: H01L33/642 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/32 ,  H01L33/40 ,  H01L33/60 ,  H01L33/641

Abstract: Disclosed is a vertical nitride semiconductor device including a conductive substrate; a semiconductor layer bonded to the conductive substrate via a second electrode; a metal layer formed on the conductive substrate; a first electrode formed on the semiconductor layer; and a bonding layer formed between the conductive substrate and the second electrode. The conductive substrate has a flange part, which extends from a side surface of the conductive substrate, on a side of the other front surface thereof. The flange part is formed in a manner in which the conductive substrate and the semiconductor layer are bonded together and then a remaining part of the conductive substrate is divided, the remaining part being formed by cutting off the semiconductor layer and part of the conductive substrate in a thickness direction so as to expose a side surface of the semiconductor layer and the side surface of the conductive substrate.

Abstract translation: 公开了一种包括导电基板的垂直氮化物半导体器件; 通过第二电极接合到所述导电基板的半导体层; 形成在所述导电性基板上的金属层; 形成在所述半导体层上的第一电极; 以及形成在所述导电基板和所述第二电极之间的接合层。 导电性基板具有从导电性基材的侧面延伸的凸缘部，其另一面的一侧。 凸缘部以导电性基板和半导体层接合的方式形成，然后将导电性基板的剩余部分分割，其余部分通过将半导体层和部分导电性基板切断而形成 厚度方向以暴露半导体层的侧表面和导电基底的侧表面。