公开(公告)号：US20200098946A1

公开(公告)日：2020-03-26

申请号：US16576261

申请日：2019-09-19

Applicant: NICHIA CORPORATION

Inventor： Kenji HASHIZUME ,  Eiji MURAMOTO ,  Nobuyoshi NIKI

IPC: H01L33/00 ,  H01L33/62

Abstract: A method of manufacturing a semiconductor element includes: a first providing step comprising providing a structure body comprising a semiconductor stacked body, the structure body including first surfaces that include surfaces defining at least one first recess; a first forming step comprising forming a first rough-surface portion at or inward of at least a portion of the surfaces defining the first recess of the structure body; a second forming step comprising forming a first metal layer at a first surface side of the structure body; a second providing step comprising providing a substrate on which a second metal layer is disposed; and a bonding step comprising heating the first metal layer and the second metal layer in a state in which the first metal layer and the second metal layer face each other.

公开(公告)号：US20250143023A1

公开(公告)日：2025-05-01

申请号：US18921406

申请日：2024-10-21

Applicant: NICHIA CORPORATION

Inventor： Nobuyoshi NIKI

IPC: H01L33/02 ,  H01L33/32

Abstract: A nitride semiconductor light emitting element includes a semiconductor structure including an n-side semiconductor layer, a p-side semiconductor layer, and an active layer disposed between the n-side semiconductor layer and the p-side semiconductor layer, and a p-side electrode disposed on the p-side semiconductor layer. The p-side semiconductor layer includes a first semiconductor part that includes, successively from the p-side electrode side, a first layer contacting the p-side electrode and containing Al and a p-type impurity, a second layer containing a p-type impurity and having a lower Al composition ratio and a lower p-type impurity concentration than those of the first layer, and a third layer containing a p-type impurity and having a higher Al composition ratio and a lower p-type impurity concentration than that of the first layer, and a larger thickness than the thicknesses of the first and second layers.