公开(公告)号：US20200098946A1

公开(公告)日：2020-03-26

申请号：US16576261

申请日：2019-09-19

Applicant: NICHIA CORPORATION

Inventor： Kenji HASHIZUME ,  Eiji MURAMOTO ,  Nobuyoshi NIKI

IPC: H01L33/00 ,  H01L33/62

Abstract: A method of manufacturing a semiconductor element includes: a first providing step comprising providing a structure body comprising a semiconductor stacked body, the structure body including first surfaces that include surfaces defining at least one first recess; a first forming step comprising forming a first rough-surface portion at or inward of at least a portion of the surfaces defining the first recess of the structure body; a second forming step comprising forming a first metal layer at a first surface side of the structure body; a second providing step comprising providing a substrate on which a second metal layer is disposed; and a bonding step comprising heating the first metal layer and the second metal layer in a state in which the first metal layer and the second metal layer face each other.

公开(公告)号：US20210384375A1

公开(公告)日：2021-12-09

申请号：US17342233

申请日：2021-06-08

Applicant: NICHIA CORPORATION

Inventor： Keiji SAKAMOTO ,  Takashi ABE ,  Hitoshi MINAKUCHI ,  Tsuyoshi ITO ,  Katsuyuki KAWABATA ,  Kenji HASHIZUME

IPC: H01L33/00 ,  H01L33/50

Abstract: A method of manufacturing a light-emitting device includes: providing a substrate having a first surface and a second surface opposite to the first surface; forming, on or above the first surface of the substrate, a semiconductor structure comprising a light-emitting layer; forming a crack inside the substrate, the crack reaching the first surface of the substrate; disposing a wavelength conversion layer on the second surface of the substrate; forming a first recess in the wavelength conversion layer by removing a first portion of the wavelength conversion layer, the first portion overlapping with the crack when viewed in a direction from the wavelength conversion layer toward the semiconductor structure, and leaving a second portion of the wavelength conversion layer between the first recess and the semiconductor structure; and cleaving the second portion along the crack.