公开(公告)号：US20220199864A1

公开(公告)日：2022-06-23

申请号：US17539521

申请日：2021-12-01

Applicant: NICHIA CORPORATION

Inventor： Eiji MURAMOTO

IPC: H01L33/44 ,  H01L33/00

Abstract: A method for manufacturing a light-emitting element includes: providing a semiconductor stacked body including a first semiconductor layer, an active layer, and a second semiconductor layer, formed in this order on a substrate; exposing a surface of the first semiconductor layer by removing the substrate; and forming a protective film on the surface of the first semiconductor layer by performing steps including: forming a first layer on the surface of the first semiconductor layer by chemical vapor deposition while introducing a source gas to a film formation chamber at a first flow rate, and forming a second layer on the first layer by chemical vapor deposition while introducing a source gas to the film formation chamber at a second flow rate, the second flow rate being less than the first flow rate.

公开(公告)号：US20240006561A1

公开(公告)日：2024-01-04

申请号：US18344443

申请日：2023-06-29

Applicant: NICHIA CORPORATION

Inventor： Eiji MURAMOTO ,  Kosuke YOSHIOKA

IPC: H01L33/38

CPC classification number: H01L33/382 ,  H01L33/32

Abstract: A shortest distance between a first p-side electrode and a second p-side connection portion is greater than a shortest distance between the first p-side electrode and a closest one of first n-side connection portions most proximate to the first p-side electrode among a plurality of first n-side connection portions in the plan view. The second p-side electrode is located at least in a region between the first p-side electrode and the closest one of the first n-side connection portions in the plan view.

公开(公告)号：US20200098946A1

公开(公告)日：2020-03-26

申请号：US16576261

申请日：2019-09-19

Applicant: NICHIA CORPORATION

Inventor： Kenji HASHIZUME ,  Eiji MURAMOTO ,  Nobuyoshi NIKI

IPC: H01L33/00 ,  H01L33/62

Abstract: A method of manufacturing a semiconductor element includes: a first providing step comprising providing a structure body comprising a semiconductor stacked body, the structure body including first surfaces that include surfaces defining at least one first recess; a first forming step comprising forming a first rough-surface portion at or inward of at least a portion of the surfaces defining the first recess of the structure body; a second forming step comprising forming a first metal layer at a first surface side of the structure body; a second providing step comprising providing a substrate on which a second metal layer is disposed; and a bonding step comprising heating the first metal layer and the second metal layer in a state in which the first metal layer and the second metal layer face each other.

公开(公告)号：US20200006914A1

公开(公告)日：2020-01-02

申请号：US16453328

申请日：2019-06-26

Applicant: NICHIA CORPORATION

Inventor： Eiji MURAMOTO ,  Akinori KISHI

IPC: H01S5/028 ,  H01L33/00 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/44 ,  H01L33/38 ,  H01S5/042 ,  H01S5/02 ,  H01S5/343

Abstract: A method for manufacturing a semiconductor element includes: providing a nitride semiconductor layer; performing plasma treatment to at least part of a surface of the nitride semiconductor layer in an oxygen-containing atmosphere while applying bias power; after the performing of the plasma treatment, heat treating the nitride semiconductor layer in an oxygen-containing atmosphere; forming a protective film on a region of the surface of the nitride semiconductor layer where the plasma treatment was performed; and forming an electrode in a region of the surface of the nitride semiconductor layer where the protective film was not formed.

公开(公告)号：US20180062025A1

公开(公告)日：2018-03-01

申请号：US15691559

申请日：2017-08-30

Applicant: NICHIA CORPORATION

Inventor： Eiji MURAMOTO

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/24 ,  H01L23/00

Abstract: A method for manufacturing a light emitting element includes: forming a semiconductor structure on a first substrate; providing a second substrate configured to be bonded above a side of the semiconductor structure opposite the first substrate; forming a metal layer above at least one of (i) a side of the semiconductor structure opposite the first substrate, and/or (ii) a side of the second substrate that is to be located closer to the semiconductor structure; bonding the second substrate above the semiconductor structure via a bonding member; removing the first substrate from the semiconductor structure to obtain a bonded body in which the second substrate is bonded above the semiconductor structure; and singulating the bonded body.

公开(公告)号：US20230246138A1

公开(公告)日：2023-08-03

申请号：US18159279

申请日：2023-01-25

Applicant: NICHIA CORPORATION

Inventor： Eiji MURAMOTO ,  Takumi OTSUKA ,  Yuya YAMAKAMI ,  Haruhiko NISHIKAGE ,  Shota KAMMOTO ,  Akinori KISHI

IPC: H01L33/38 ,  H01L33/32 ,  H01L33/62 ,  H01L33/02

CPC classification number: H01L33/382 ,  H01L33/025 ,  H01L33/32 ,  H01L33/62

Abstract: A light emitting element includes: a semiconductor structure including an n-side layer, a p-side layer, and an active layer, each being made of a nitride semiconductor, wherein the active layer is positioned between the n-side layer and the p-side layer and is configured to emit ultraviolet light; an n-electrode electrically connected to the n-side layer; and a p-electrode comprising a first metal layer in contact with the p-side layer and electrically connected to the p-side layer. The p-side layer comprises a first layer, a second layer disposed on the first layer, and a third layer disposed on the second layer, each containing a p-type impurity. A surface of the second layer includes an exposed region that is exposed from the third layer. The first layer and the second layer contain Al.

公开(公告)号：US20210408322A1

公开(公告)日：2021-12-30

申请号：US17361803

申请日：2021-06-29

Applicant: NICHIA CORPORATION

Inventor： Eiji MURAMOTO ,  Maki FUJIMOTO

IPC: H01L33/00 ,  H01L33/32

Abstract: A method of manufacturing a light-emitting element includes: providing a semiconductor structure including: a first layer containing gallium and nitrogen, a second layer of a first conductive type, the second layer containing gallium, aluminum, and nitrogen and being located on or above the first layer, an active layer located on or above the second layer, and a third layer of a second conductive type, the third layer located on or above the active layer, wherein a thickness of the first layer is larger than a thickness of the second layer; performing chemical-mechanical polishing from a first layer side to reduce the thickness of the first layer; and performing dry etching from the first layer side to remove the first layer and reduce the thickness of the second layer.

公开(公告)号：US20200381583A1

公开(公告)日：2020-12-03

申请号：US16886279

申请日：2020-05-28

Applicant: NICHIA CORPORATION

Inventor： Eiji MURAMOTO

IPC: H01L33/00

Abstract: A method of manufacturing a semiconductor device includes: providing a first member comprising: a first substrate, a semiconductor layer disposed on the first substrate and defining a first recess, and a first metal layer disposed above at least a portion other than the first recess, the first member defining a second recess in a region of a surface of the first member including a region directly above the first recess; providing a second member comprising: a second substrate, a second metal layer on or above the second substrate, a third metal layer on the second metal layer, and a fourth metal layer on the third metal layer; and bonding the first member and the second member together by heating the first metal layer and the fourth metal layer while facing each other. The third metal layer impedes interdiffusion between the second metal layer and the fourth metal layer.