公开(公告)号：US20230416090A1

公开(公告)日：2023-12-28

申请号：US18464235

申请日：2023-09-10

Applicant: NICHIA CORPORATION

Inventor： Shimpei KINOSHITA ,  Shoji HOSOKAWA

IPC: C01B21/072 ,  H01L23/00

CPC classification number: C01B21/072 ,  H01L24/01 ,  C01P2004/64 ,  C01P2002/74

Abstract: Provided are silicon-containing aluminum nitride particles having a high reflectance, a method for producing the same, and a light emitting device. In certain embodiment, silicon-containing aluminum nitride particles having a total amount of aluminum and nitrogen of 90% by mass or more, a content of silicon in a range of 1.5% by mass or more and 4.0% by mass or less, and a content of oxygen in a range of 0.5% by mass or more and 2.0% by mass or less, and having an average reflectance in a wavelength range of 380 nm or more and 730 nm or less of 85% or more.

公开(公告)号：US20250145887A1

公开(公告)日：2025-05-08

申请号：US18936924

申请日：2024-11-04

Applicant: NICHIA CORPORATION

Inventor： Teruhiko NOGUCHI ,  Toshiyuki HIRAI ,  Shimpei KINOSHITA

IPC: C09K11/77 ,  H01L33/32 ,  H01L33/50

Abstract: A sintered body contains a fluorescent material being at least one selected from the group consisting of a nitride fluorescent material having a composition of formula (I) and an α-SiAlON fluorescent material having a composition of formula (II), and emits light having a color tone in an area A1 surrounded by lines connecting a point 1a (x=0.549, y=0.425), a point 2a (x=0.562, y=0.438), a point 3a (x=0.589, y=0.411), and a point 4a (x=0.576, y=0.407) in the chromaticity diagram of the CIE 1931 color system upon irradiation with excitation light, wherein, upon irradiation with excitation light, the light emitted from the sintered body has an emission spectrum in which an integral value ratio Z2/Z1 as described in the disclosure is 0.005 or more.

公开(公告)号：US20240279547A1

公开(公告)日：2024-08-22

申请号：US18639313

申请日：2024-04-18

Applicant: NICHIA CORPORATION

Inventor： Takayuki SHINOHARA ,  Shimpei KINOSHITA

IPC: C09K11/77 ,  C01B21/06

CPC classification number: C09K11/77218 ,  C01B21/0602 ,  C01P2002/54 ,  C01P2002/60 ,  C01P2004/03

Abstract: Provided a method for producing a nitride phosphor. The method includes preparing a mixture that comprises a first nitride and a cerium source, the first nitride comprising, as a host crystal, a crystal having the same crystal structure as CaAlSiN3; and performing a heat treatment of the mixture at a temperature of 1,300° C. to 1,900° C. to obtain a second nitride. The first nitride comprises aluminum, silicon, nitrogen, and at least one selected from the group consisting of lithium, calcium, and strontium.

公开(公告)号：US20250034452A1

公开(公告)日：2025-01-30

申请号：US18785467

申请日：2024-07-26

Applicant: NICHIA CORPORATION

Inventor： Teruhiko NOGUCHI ,  Toshiyuki HIRAI ,  Shimpei KINOSHITA

IPC: C09K11/77 ,  C01B21/06

Abstract: A method for producing a ceramic sintered body includes: preparing a molded body containing a nitride fluorescent material having the composition containing Si; N; at least one alkaline earth metal element M1; and a metal element M2 being at least one selected from the group consisting of Eu, Ce, Tb, and Mn, to obtain a composition as described in the disclosure; obtaining a first sintered body by performing primary calcination of the molded body; obtaining a second sintered body by performing secondary calcination of the first sintered body in contact with a solid composed of a molybdenum metal or an alloy containing molybdenum as a main component; and obtaining a third sintered body by performing third calcination of the second sintered body while being placed in a container containing a metal having a melting point higher than that of the molybdenum metal.

公开(公告)号：US20220315837A1

公开(公告)日：2022-10-06

申请号：US17657111

申请日：2022-03-29

Applicant: NICHIA CORPORATION

Inventor： Takayuki SHINOHARA ,  Shimpei KINOSHITA

IPC: C09K11/77 ,  C01B21/06

Abstract: Provided a method for producing a nitride phosphor. The method includes preparing a mixture that comprises a first nitride and a cerium source, the first nitride comprising, as a host crystal, a crystal having the same crystal structure as CaAlSiN3; and performing a heat treatment of the mixture at a temperature of 1,300° C. to 1,900° C. to obtain a second nitride. The first nitride comprises aluminum, silicon, nitrogen, and at least one selected from the group consisting of lithium, calcium, and strontium.