公开(公告)号：US10093572B2

公开(公告)日：2018-10-09

申请号：US14660561

申请日：2015-03-17

申请人： NIKON CORPORATION

发明人： Toshio Yoshinari

IPC分类号： C03B19/14 ,  C03B11/08 ,  C03C3/06 ,  G03F1/60 ,  C03B23/049 ,  C03B32/00

摘要： A method for manufacturing an SiO2—TiO2 based glass upon a target by a direct method, includes: an ingot growing step of growing an SiO2—TiO2 based glass ingot having a predetermined length on the target by flame hydrolysis by feeding a silicon compound and a titanium compound into an oxyhydrogen flame, wherein the ingot growing step includes: a first step of increasing a ratio of a feed rate of the titanium compound to a feed rate of the silicon compound as the SiO2—TiO2 based glass ingot grows until the ratio reaches a predetermined value; and a second step of gradually growing the SiO2—TiO2 based glass ingot after the ratio has reached the predetermined value in the first stage with keeping the ratio within a predetermined range.

公开(公告)号：US10266443B2

公开(公告)日：2019-04-23

申请号：US15716084

申请日：2017-09-26

申请人： NIKON CORPORATION

发明人： Toshio Yoshinari ,  Tadahiko Saito

IPC分类号： C03B19/14 ,  C03C3/04 ,  C03B23/00 ,  C03C3/06 ,  C03B32/00 ,  C03B23/049 ,  C03B11/00

摘要： A device for manufacturing SiO2—TiO2 based glass by growing a glass ingot upon a target by a direct method. The device includes the target, comprising a thermal storage portion that accumulates heat by being preheated, and a heat insulating portion that suppresses conduction of heat from the thermal storage portion in a direction opposite to the glass ingot.

公开(公告)号：US09802852B2

公开(公告)日：2017-10-31

申请号：US14582237

申请日：2014-12-24

申请人： NIKON CORPORATION

发明人： Toshio Yoshinari ,  Tadahiko Saito

IPC分类号： C03B19/14 ,  C03B11/00 ,  C03C3/06 ,  C03B32/00 ,  C03B23/00 ,  C03B23/049 ,  C03C3/04

CPC分类号： C03B19/1415 ,  C03B11/00 ,  C03B19/1453 ,  C03B19/1469 ,  C03B19/1476 ,  C03B19/1492 ,  C03B23/0013 ,  C03B23/0496 ,  C03B32/005 ,  C03B2201/12 ,  C03B2201/42 ,  C03C3/04 ,  C03C3/06 ,  C03C2201/12 ,  C03C2201/42 ,  C03C2203/44 ,  C03C2203/52

摘要： A method for manufacturing an SiO2—TiO2 based glass upon a target by a direct method, includes a first process of preheating the target and a second process of growing an SiO2—TiO2 based glass ingot to a predetermined length upon the target which has been preheated, wherein the target is heated in the first process such that, in the second process, the temperature of growing surface of the glass ingot is maintained at or above a predetermined lower limit temperature.