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公开(公告)号：US20240312946A1
公开(公告)日：2024-09-19
申请号：US18275595
申请日：2022-01-31
发明人： Tetsuya OYAMADA , Yuya SUTO , Tomohiro UNO , Daizo ODA , Ryo OISHI , Yuto KURIHARA
IPC分类号： H01L23/00
CPC分类号： H01L24/45 , H01L2224/45124 , H01L2924/01012 , H01L2924/01014 , H01L2924/01021 , H01L2924/01026 , H01L2924/01028 , H01L2924/0104 , H01L2924/01046 , H01L2924/01078
摘要： To provide an Al bonding wire for semiconductor devices that stably exhibits a favorable bonding strength at a second bonded part. An Al bonding wire for semiconductor devices containing equal to or larger than 0.01 mass % and smaller than 0.8 mass % of one or more of Sc, Zr, and Mg in total, wherein, as a result of measuring a crystal orientation on a cross-section parallel to a wire axis direction including a wire axis of the bonding wire, 10 an orientation ratio of a crystal orientation angled at 15 degrees or less to the wire axis direction is equal to or higher than 30% and equal to or lower than 90%.
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公开(公告)号：US20240110262A1
公开(公告)日：2024-04-04
申请号：US18275599
申请日：2022-01-31
发明人： Tomohiro UNO , Yuya SUTO , Tetsuya OYAMADA , Daizo ODA , Yuto KURIHARA , Motoki ETO
IPC分类号： C22C21/14 , C22C1/02 , C22C21/00 , C22C21/02 , C22C21/08 , C22C21/16 , C22F1/043 , C22F1/047 , C22F1/057 , H01L23/00
CPC分类号： C22C21/14 , C22C1/026 , C22C21/00 , C22C21/02 , C22C21/08 , C22C21/16 , C22F1/043 , C22F1/047 , C22F1/057 , H01L24/45 , H01L2224/45124
摘要： There is provided an Al wiring material which can achieve sufficient bond reliability of bonded parts in a high-temperature environment at the time when a semiconductor device operates. The Al wiring material containing one or more of Pd and Pt so as to satisfy
3≤x1a≤90 or 10≤x1b≤250, and
3≤(x1a+x1b)≤300,
where x1a and x1b are respectively a content of Pd [mass ppm] and a content of Pt [mass ppm],
with the balance comprising Al, and
an average crystal grain diameter on a cross-section perpendicular to a longitudinal direction of the Al wiring material is 3 to 35 μm.-
公开(公告)号：US20240071978A1
公开(公告)日：2024-02-29
申请号：US18275177
申请日：2022-01-31
发明人： Yuya SUTO , Tomohiro UNO , Tetsuya OYAMADA , Daizo ODA , Motoki ETO , Yuto KURIHARA
IPC分类号： H01L23/00
CPC分类号： H01L24/45 , H01L24/43 , H01L2224/43848 , H01L2224/45015 , H01L2224/45124 , H01L2924/207
摘要： To provide an Al bonding wire exhibiting a favorable high-temperature and high-humidity service life in a high-temperature and high-humidity environment required for next-generation vehicle-mounted power devices. The Al bonding wire for semiconductor devices containing equal to or larger than 3 mass ppm and equal to or smaller than 500 mass ppm of one or more of Pd and Pt in total, in which, as a result of measuring a crystal orientation on a cross section parallel to a wire axis direction including a wire axis of the bonding wire, an orientation ratio of a crystal orientation angled at 15 degrees or less to the wire axis direction is equal to or higher than 30% and equal to or lower than 90%.
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公开(公告)号：US20230302584A1
公开(公告)日：2023-09-28
申请号：US18023198
申请日：2021-08-24
发明人： Tomohiro UNO , Tetsuya OYAMADA , Yuya SUTO , Daizo ODA , Yuto KURIHARA , Ryo OISHI
CPC分类号： B23K35/286 , H01L24/45 , B23K35/0261 , C22C21/02 , C22C21/08 , H01L2224/45124 , B23K2101/40
摘要： There is provided a novel Al wiring material that achieves a favorable high-temperature reliability as well as a favorable workability and bondability during installation and connection to a device. The Al wiring material contains Mg and Si so as to satisfy 0.05≤x1a≤2.5, 0.02≤x1b≤1, and 0.1≤(x1a+x1b)≤3 where x1a is a content of Mg [% by mass] and x1b is a content of Si [% by mass], and contains one or more selected from the group consisting of Sc, Er, Yb, Gd, Ce and Y so as to satisfy 0.001≤x2≤0.5 where x2 is a total content thereof [% by mass], with the balance comprising Al.
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公开(公告)号：US20220341004A1
公开(公告)日：2022-10-27
申请号：US17764872
申请日：2020-09-17
发明人： Yuto KURIHARA , Ryo OISHI , Motoki ETO , Daizo ODA , Tetsuya OYAMADA , Yuya SUTO , Tomohiro UNO
摘要： There is provided an Al wiring material which suppresses a chip crack and achieves thermal shock resistance while suppressing lowering of a yield at the time of manufacture. The Al wiring material contains at least Sc and Zr so as to satisfy 0.01≤x1≤0.5 and 0.01≤x2≤0.3 where x1 is a content of Sc [% by weight] and x2 is a content of Zr [% by weight], with the balance comprising Al.
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