公开(公告)号：US20240417835A1

公开(公告)日：2024-12-19

申请号：US18702426

申请日：2022-10-31

Applicant: NIPPON STEEL CORPORATION

Inventor： Kyohei KANKI ,  Hideki TAKABE ,  Katsuhiro NISHIHARA ,  Takafumi AMINO

IPC: C22C38/44 ,  C21D1/18 ,  C21D8/10 ,  C21D9/08 ,  C22C38/00 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C22C38/42 ,  C22C38/46 ,  C22C38/50 ,  C22C38/52

Abstract: A martensitic stainless steel seamless pipe according to the present disclosure has a chemical composition and the microstructure described in the description, and a yield strength of 862 MPa or more. An observation field of view region which is 1.0 μm long in each of L direction and T direction and which includes an inner surface is composed of an inner surface vicinity region, an interior region that is below contact with the inner surface vicinity region, and a hollow region. An inner surface Cu occupancy OScu which is defined as the numerical proportion of sections in which a Cu concentration is more than 2.0% in the inner surface vicinity region, and an interior Cu occupancy OIcu which is defined as the numerical proportion of sections in which the Cu concentration is more than 2.0% in the interior region satisfy Formula (2). OS Cu / OI Cu ≥ 1.2 ( 2 )

公开(公告)号：US20220085362A1

公开(公告)日：2022-03-17

申请号：US17422830

申请日：2020-01-17

Applicant: NIPPON STEEL CORPORATION

Inventor： Sukeyoshi YAMAMOTO ,  Tatsuo NAGATA ,  Shunsuke TANIGUCHI ,  Takafumi AMINO ,  Akira TANIYAMA

IPC: H01M4/38 ,  C22C9/00 ,  H01M10/0525

Abstract: Provided is a negative electrode active material which is excellent in capacity, capacity retention ratio, and a coulombic efficiency when charging/discharging is repeated. The chemical composition of the alloy particles of the negative electrode active material of the present disclosure includes 0.50 to 3.00 mass % of oxygen, and alloy elements containing Sn: 13.0 to 40.0 at % and Si: 6.0 to 40.0 at %, with the balance being Cu and impurities. The structure of the alloy particles includes: one or more types selected from the group consisting of a phase having a D03 structure, and a δ phase; one or more types selected from the group consisting of an ε phase and an η′ phase; and a SiOx phase (x=0.50 to 1.70). The SiOx phase (x=0.50 to 1.70) has a volume fraction of 5.0 to 60.0% and the η′ phase has a volume fraction of 0 to 60.0%.

公开(公告)号：US20200066481A1

公开(公告)日：2020-02-27

申请号：US16489299

申请日：2018-05-31

Applicant: NIPPON STEEL CORPORATION

Inventor： Takashige MORI ,  Takafumi AMINO ,  Naoki MARUYAMA ,  Akira TANIYAMA ,  Shunsuke TANIGUCHI ,  Chie YOKOYAMA

IPC: H01J37/20 ,  H01J37/28

Abstract: There is provided a tilting parameters calculating device for use in a charged particle beam device for making a charged particle beam irradiated to a surface of a sample mounted on a sample stage, the tilting parameters calculating device being configured to calculate tilting parameters, the tilting parameters being input parameters to control a tilting direction and a tilting value of the sample and/or the charged particle beam, the input parameters being necessary to change an incident direction of the charged particle beam with respect to the sample, the tilting parameters calculating device including a tilting parameters calculating unit for calculating the tilting parameters based on information that indicates the incident direction of the charged particle beam with respect to a crystal lying at a selected position on the surface in a state where the incident direction of the charged particle beam with respect to the sample is in a predetermined incident direction, the information being designated on a crystal orientation figure, which is a diagram illustrating the incident direction of the charged particle beam with respect to a crystal coordinate system of the crystal.

公开(公告)号：US20200066480A1

公开(公告)日：2020-02-27

申请号：US16489268

申请日：2018-10-25

Applicant: NIPPON STEEL CORPORATION

Inventor： Takafumi AMINO ,  Takashige MORI ,  Naoki MARUYAMA

IPC: H01J37/20 ,  H01J37/26 ,  H01J37/28 ,  H01J37/22 ,  G01N23/2251

Abstract: There is provided a crystal orientation figure creating device for use in a charged particle beam device for making a charged particle beam irradiated to a surface of a sample, the crystal orientation figure creating device being configured to create a crystal orientation figure, which is a figure representing a crystal coordinate system of a crystal at a position selected on the surface with respect to an incident direction of the charged particle beam, the crystal orientation figure creating device including: an orientation information acquiring unit configured to acquire crystal orientation information with respect to the incident direction at the selected position; an incident direction information acquiring unit configured to acquire information relating to an incident direction of the charged particle beam with respect to the sample; and a crystal orientation figure creating unit configured to create a crystal orientation figure in a changed incident direction at the selected position, based on the crystal orientation information acquired by the orientation information acquiring unit, and the information relating to the incident direction at the time when the crystal orientation information is acquired and the information relating to the changed incident direction, acquired by the incident direction information acquiring unit.