公开(公告)号：US20240268058A1

公开(公告)日：2024-08-08

申请号：US18577130

申请日：2021-07-08

Applicant: NISSAN MOTOR CO., LTD. ,  RENAULT s.a.s.

Inventor： Kenta EMORI ,  Jumpei NIIDA ,  Emi TAKAHASHI ,  Shigeharu YAMAGAMI

IPC: H05K7/20 ,  H01L23/467 ,  H05H1/24 ,  H05K1/16

CPC classification number: H05K7/20136 ,  H01L23/467 ,  H05H1/2439 ,  H05K1/16

Abstract: A cooling device cools an electronic component using a plasma actuator provided with a dielectric, a first electrode arranged on one surface of the dielectric to generate an induced flow, and a second electrode arranged on the other surface of the dielectric, in which the electronic component and a third electrode are arranged in a flow direction of the induced flow, and a voltage applied to the third electrode is a voltage that generates a potential difference, which is capable of attracting the induced flow, between the first electrode and the third electrode.

公开(公告)号：US20210384105A1

公开(公告)日：2021-12-09

申请号：US17282450

申请日：2018-10-05

Applicant: NISSAN MOTOR CO., LTD. ,  RENAULT S.A.S.

Inventor： Kenta EMORI ,  Jumpei NIIDA ,  Shigeharu YAMAGAMI

IPC: H01L23/467 ,  H05K7/20 ,  F28F13/12

Abstract: A cooling apparatus including a heat sink to which a heat generating body is joined, a main flow generation device configured to generate a main flow for cooling the heat sink, and an induced flow generation device configured to electrically generate an induced flow. The induced flow generation device is provided to a support member facing the heat sink.

公开(公告)号：US20210183823A1

公开(公告)日：2021-06-17

申请号：US16758994

申请日：2017-10-27

Applicant: NISSAN MOTOR CO., LTD.

Inventor： Kenta EMORI ,  Tetsuya HAYASHI

IPC: H01L25/07 ,  H01L23/00

Abstract: The semiconductor device includes at least three semiconductor elements disposed directly or indirectly on a planar member and constituting an upper arm and a lower arm which perform ON and OFF action at mutually differential times; an upper-surface voltage applied region of each semiconductor element is configured to be narrower than an area of the aforementioned whole semiconductor element in planar view; and each semiconductor element is disposed so that the shortest distance between the semiconductor elements constituting the upper arm is formed so as to be longer than the shortest distance between the semiconductor element constituting the upper arm and the semiconductor element constituting the lower arm.

公开(公告)号：US20160181371A1

公开(公告)日：2016-06-23

申请号：US14905648

申请日：2014-06-03

Applicant: NISSAN MOTOR CO., LTD.

Inventor： Wei NI ,  Tetsuya HAYASHI ,  Toshiharu MARUI ,  Yuji SAITO ,  Kenta EMORI

IPC: H01L29/10 ,  H01L29/66 ,  H01L21/04 ,  H01L29/08 ,  H01L21/306 ,  H01L21/265 ,  H01L29/78 ,  H01L29/16

CPC classification number: H01L29/1095 ,  H01L21/047 ,  H01L21/0475 ,  H01L21/26586 ,  H01L21/30604 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0865 ,  H01L29/0882 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/66696 ,  H01L29/66704 ,  H01L29/7816 ,  H01L29/7825 ,  H01L29/7835

Abstract: The semiconductor device includes: a substrate, an n-type drift region formed on a main surface of the substrate; a p-type well region, an n-type drain region and an n-type source region each formed in the drift region to extend from a second main surface of the drift region opposite to the first main surface of the drift region in contact with the substrate in a direction perpendicular to the second main surface; a gate groove extending from the second main surface in the perpendicular direction and penetrating the source region and the well region in a direction parallel to the first main surface of the substrate; and a gate electrode formed on a surface of the gate groove with a gate insulating film interposed therebetween, wherein the drift region has a higher impurity concentration than the substrate, and the well region extends to the inside of the substrate.

Abstract translation: 半导体器件包括：衬底，形成在衬底的主表面上的n型漂移区; p型阱区，n型漏区和n型源极区，分别形成在漂移区中，从与漂移区的第一主表面相反的第二主表面延伸，与漂移区的第一主表面相接触 所述基板在垂直于所述第二主表面的方向上; 栅极沟槽，其从垂直方向从第二主表面延伸并沿平行于衬底的第一主表面的方向穿透源极区域和阱区域; 以及在所述栅极沟槽的表面上形成有栅极绝缘膜的栅电极，其中所述漂移区域具有比所述衬底更高的杂质浓度，并且所述阱区域延伸到所述衬底的内部。