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    CIGS FILM, AND CIGS SOLAR CELL EMPLOYING THE SAME
    1.
    发明申请
    CIGS FILM, AND CIGS SOLAR CELL EMPLOYING THE SAME 有权
    CIGS薄膜和CIGS太阳能电池

    公开(公告)号：US20150380589A1

    公开(公告)日：2015-12-31

    申请号：US14766552

    申请日：2014-01-24

    Applicant: NITTO DENKO CORPORATION

    Inventor： Seiki Teraji ,  Hiroto Nishii ,  Taichi Watanabe ,  Yusuke Yamamoto ,  Kazunori Kawamura ,  Takashi Minemoto ,  Jakapan Chantana

    IPC: H01L31/065 ,  H01L31/032

    CPC classification number: H01L31/0322 ,  H01L21/02485 ,  H01L21/0251 ,  H01L21/02568 ,  H01L31/03923 ,  H01L31/03928 ,  H01L31/065 ,  H01L31/0749 ,  Y02E10/50 ,  Y02E10/541 ,  Y02E10/543

    Abstract: The present invention provides a CIGS film substantially free from oxidation of a front surface thereof and a CIGS solar cell employing the CIGS film and substantially free from reduction and variation in conversion efficiency. The CIGS film, which is used as a light absorbing layer for the CIGS solar cell, includes: a first region having a Ga/(In+Ga) ratio progressively reduced along its thickness toward a predetermined first thickness position from a back surface of the CIGS film; a second region having a Ga/(In+Ga) ratio progressively increased along its thickness toward a predetermined second thickness position from the first region; and a third region provided on the second region and having a Ga/(In+Ga) ratio progressively reduced along its thickness toward the front surface of the CIGS film.

    Abstract translation: 本发明提供了一种基本上不含氧化前表面的CIGS膜和采用CIGS膜的CIGS太阳能电池，并且基本上没有减少和变化的转换效率。 用作CIGS太阳能电池的光吸收层的CIGS膜包括：具有Ga /（In + Ga）比率的第一区域沿着其厚度朝着预定的第一厚度位置逐渐地从 CIGS电影; 具有Ga /（In + Ga）比率的第二区域沿其厚度从第一区域朝向预定的第二厚度位置逐渐增加; 以及设置在所述第二区域上并且其Ga /（In + Ga）比沿其厚度逐渐减小到所述CIGS膜的前表面的第三区域。

    CIGS FILM PRODUCTION METHOD, AND CIGS SOLAR CELL PRODUCTION METHOD USING THE CIGS FILM PRODUCTION METHOD
    2.
    发明申请
    CIGS FILM PRODUCTION METHOD, AND CIGS SOLAR CELL PRODUCTION METHOD USING THE CIGS FILM PRODUCTION METHOD 审中-公开
    CIGS膜生产方法和CIGS太阳能电池生产方法使用CIGS膜生产方法

    公开(公告)号：US20150357492A1

    公开(公告)日：2015-12-10

    申请号：US14762940

    申请日：2014-01-24

    Applicant: NITTO DENKO CORPORATION

    Inventor： Seiki Teraji ,  Taichi Watanabe ,  Hiroto Nishii ,  Yusuke Yamamoto ,  Kazunori Kawamura ,  Takashi Minemoto ,  Jakapan Chantana

    IPC: H01L31/0392 ,  H01L31/18

    CPC classification number: H01L31/03923 ,  H01L21/02485 ,  H01L21/0251 ,  H01L21/02568 ,  H01L31/0322 ,  H01L31/0749 ,  H01L31/18 ,  H01L31/1884 ,  Y02E10/541 ,  Y02P70/521

    Abstract: A CIGS film production method capable of suppressing oxidation of a front surface of a CIGS film, and a CIGS solar cell production method using the CIGS film production method includes the steps of: forming a first region having a Ga/(In+Ga) ratio progressively reduced as the thickness of the first region increases to a predetermined first thickness position from a back surface of the CIGS film; forming a second region having a Ga/(In+Ga) ratio progressively increased as the thickness of the second region increases to a predetermined second thickness position from the first region; and forming a third region on the second region by vapor-depositing Se and In, the third region having a Ga/(In+Ga) ratio progressively reduced toward a front surface of the CIGS film.

    Abstract translation: 能够抑制CIGS膜的表面的氧化的CIGS膜制造方法和使用CIGS膜制造方法的CIGS太阳能电池的制造方法包括以下步骤：形成Ga /（In + Ga）比率的第一区域 随着第一区域的厚度从CIGS膜的背面增加到预定的第一厚度位置，逐渐减小; 随着第二区域的厚度从第一区域增加到预定的第二厚度位置，形成具有Ga /（In + Ga）比率的第二区域逐渐增加; 并且通过气相沉积Se和In在第二区域上形成第三区域，具有Ga /（In + Ga）比率的第三区域朝向CIGS膜的前表面逐渐减小。

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