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    MULTIJUNCTION SOLAR CELLS
    3.
    发明公开
    MULTIJUNCTION SOLAR CELLS 审中-公开

    公开(公告)号：US20230361234A1

    公开(公告)日：2023-11-09

    申请号：US18221462

    申请日：2023-07-13

    Applicant: SolAero Technologies Corp.

    Inventor： JOHN HART ,  DANIEL DERKACS ,  ZACHARY BITTNER ,  ANDREW ESPENLAUB

    IPC: H01L31/0735 ,  H01L31/0693 ,  H01L31/065 ,  H01L31/0687 ,  H01L31/0725

    CPC classification number: H01L31/0735 ,  H01L31/0693 ,  H01L31/065 ,  H01L31/0687 ,  H01L31/0725

    Abstract: A multijunction solar cell including an upper first solar subcell having an emitter and base layers forming a photoelectric junction; a second solar subcell disposed under and adjacent to the upper first solar subcell, and having an emitter and base layers forming a photoelectric junction; and a third solar subcell disposed under and adjacent to the second solar subcell and having an emitter and base layers forming a photoelectric junction; wherein at least one of the base and emitter layers of at least a particular solar subcell from among the upper first solar subcell, the second solar subcell, and the third solar subcell has a graded band gap throughout at least a portion of thickness of its active layer adjacent to the photoelectric junction and being in a range of 20 to 300 MeV greater than a band gap in the active layer away from the photoelectric junction.

    LIQUID PHASE EPITAXY DOPING AND SILICON PN JUNCTION PHOTOVOLTAIC DEVICES
    4.
    发明申请
    LIQUID PHASE EPITAXY DOPING AND SILICON PN JUNCTION PHOTOVOLTAIC DEVICES 审中-公开

    公开(公告)号：US20180240671A1

    公开(公告)日：2018-08-23

    申请号：US15901363

    申请日：2018-02-21

    Applicant: The Regents of the University of California

    Inventor： David Fenning ,  Ernesto Magana

    IPC: H01L21/228 ,  H01L31/065 ,  H01L31/18 ,  H01L21/02

    CPC classification number: H01L21/228 ,  H01L21/02057 ,  H01L31/065 ,  H01L31/1804 ,  Y02E10/50 ,  Y02P70/521

    Abstract: A method for forming a doped silicon layer or a silicon alloy includes providing a silicon substrate having a silicon surface. An eutectic-former layer with dopant is formed on the silicon surface. Heating is conducted past a system eutectic temperature of the eutectic-former layer and silicon to form a liquid eutectic melt that incorporates some of the silicon near-surface into the liquid eutectic melt. Cooling to supersaturate the liquid eutectic melt with silicon and recrystallize silicon doped with the dopant. A silicon solar cell includes an emitter layer within a silicon substrate. A p-n junction is defined by a junction of the emitter layer with the remaining silicon substrate. The emitter has a doping profile with a doping concentration at the p-n junction that is equal or greater than the doping concentration at a surface of the emitter layer.

    Photovoltaic device with three dimensional charge separation and collection
    8.
    发明授权
    Photovoltaic device with three dimensional charge separation and collection 有权

    公开(公告)号：US09660126B2

    公开(公告)日：2017-05-23

    申请号：US13312780

    申请日：2011-12-06

    Applicant: Wladyslaw Walukiewicz ,  Lothar A. Reichertz ,  Iulian Gherasoiu

    Inventor： Wladyslaw Walukiewicz ,  Lothar A. Reichertz ,  Iulian Gherasoiu

    IPC: H01L31/0352 ,  H01L31/065 ,  H01L31/0304 ,  H01L31/072

    CPC classification number: H01L31/065 ,  H01L31/03048 ,  H01L31/072 ,  Y02E10/544 ,  Y02P70/521

    Abstract: A photovoltaic device having three dimensional (3D) charge separation and collection, where charge separation occurs in 3D depletion regions formed between a p-type doped group III-nitride material in the photovoltaic device and intrinsic structural imperfections extending through the material. The p-type group III-nitride alloy is compositionally graded to straddle the Fermi level pinning by the intrinsic structural imperfections in the material at different locations in the group III-nitride alloy. A field close to the surfaces of the intrinsic defects separates photoexcited electron-hole pairs and drives the separated electrons to accumulate at the surfaces of the intrinsic defects. The intrinsic defects function as n-type conductors and transport the accumulated electrons to the material surface for collection. The compositional grading also creates a potential that drives the accumulated separated electrons toward an n-type group III-nitride layer for collection. The p-type group III-nitride alloy may comprise an alloy of InGaN, InAlN or InGaAlN.

    SOLAR CELL
    10.
    发明申请
    SOLAR CELL 审中-公开
    太阳能电池

    公开(公告)号：US20170077341A1

    公开(公告)日：2017-03-16

    申请号：US15308906

    申请日：2015-04-23

    Applicant: Solar Frontier K.K.

    Inventor： Hiroki SUGIMOTO ,  Takuya KATOU ,  Noriyuki SAKAI

    IPC: H01L31/0749

    CPC classification number: H01L31/0749 ,  H01L31/0326 ,  H01L31/065 ,  H01L31/072 ,  Y02E10/50

    Abstract: This solar cell is provided with a substrate (11), a first electrode layer (12) which is arranged on the substrate (11), a p-type CZTS light absorption layer (13) which is arranged on the first electrode layer (12) and which contains copper, zinc, tin, and group VI elements including sulfur and selenium, and an n-type second electrode layer (15) which is arranged on the CZTS light absorption layer (13), wherein the sulfur concentration in the group VI elements in the CZTS light absorption layer (13) increases, in the depth direction, from the side facing the second electrode layer (15) towards the side facing the first electrode layer (12).

    Abstract translation: 该太阳能电池设置有基板（11），布置在基板（11）上的第一电极层（12），配置在第一电极层（12）上的p型CZTS光吸收层 ），其含有包含硫和硒的铜，锌，锡和VI族元素，以及布置在CZTS光吸收层（13）上的n型第二电极层（15），其中组中的硫浓度 CZTS光吸收层（13）中的VI元件在深度方向上从面向第二电极层（15）的一侧向面向第一电极层（12）的一侧增加。

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