METHOD AND APPARATUS FOR IRRADIATING A SEMI-CONDUCTOR WAFER WITH ULTRAVIOLET LIGHT
    5.
    发明申请
    METHOD AND APPARATUS FOR IRRADIATING A SEMI-CONDUCTOR WAFER WITH ULTRAVIOLET LIGHT 审中-公开
    用超紫外线照射半导体滤波器的方法和装置

    公开(公告)号:US20140306603A1

    公开(公告)日:2014-10-16

    申请号:US14217715

    申请日:2014-03-18

    CPC classification number: H01L21/67115 H01J65/044

    Abstract: An apparatus for generating ultraviolet light and irradiating a 450 mm diameter semi-conductor wafer. The apparatus includes a plenum and an array of nine RF irradiator units coupled with the plenum. Each irradiator unit includes a plasma lamp bulb and an RF generator operable to generate a radiation energy field to excite the plasma lamp bulb and emit the ultraviolet light. The nine irradiator units are arranged in three rows with three of the irradiator units in each row.

    Abstract translation: 一种用于产生紫外光并照射450mm直径的半导体晶片的装置。 该装置包括一个增压室和与该增压室相连的九个射频辐射器单元阵列。 每个照射器单元包括等离子体灯泡和RF发生器,其可操作以产生辐射能场以激发等离子体灯泡并发射紫外光。 这9个辐射器单元被排列成三行,每排有三个辐照器单元。

    Method and apparatus for irradiating a semi-conductor wafer with ultraviolet light
    8.
    发明授权
    Method and apparatus for irradiating a semi-conductor wafer with ultraviolet light 有权
    用紫外线照射半导体晶片的方法和装置

    公开(公告)号:US09171747B2

    公开(公告)日:2015-10-27

    申请号:US14217715

    申请日:2014-03-18

    CPC classification number: H01L21/67115 H01J65/044

    Abstract: An apparatus for generating ultraviolet light and irradiating a 450 mm diameter semi-conductor wafer. The apparatus includes a plenum and an array of nine RF irradiator units coupled with the plenum. Each irradiator unit includes a plasma lamp bulb and an RF generator operable to generate a radiation energy field to excite the plasma lamp bulb and emit the ultraviolet light. The nine irradiator units are arranged in three rows with three of the irradiator units in each row.

    Abstract translation: 一种用于产生紫外光并照射450mm直径的半导体晶片的装置。 该装置包括一个增压室和与该增压室相连的九个射频辐射器单元阵列。 每个照射器单元包括等离子体灯泡和RF发生器,其可操作以产生辐射能场以激发等离子体灯泡并发射紫外光。 这9个辐射器单元被排列成三行,每排有三个辐照器单元。

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