公开(公告)号：US20190033069A1

公开(公告)日：2019-01-31

申请号：US16140340

申请日：2018-09-24

Applicant: NOVA MEASURING INSTRUMENTS, INC.

Inventor： Heath A. Pois ,  Wei Ti Lee ,  Lawrence V. Bot ,  Michael C. Kwan ,  Mark Klare ,  Charles Thomas Larson

IPC: G01B15/02 ,  G01N23/2273 ,  G01N23/223

Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.

公开(公告)号：US11029148B2

公开(公告)日：2021-06-08

申请号：US16872568

申请日：2020-05-12

Applicant: NOVA MEASURING INSTRUMENTS, INC.

Inventor： Heath A. Pois ,  Wei Ti Lee ,  Lawrence V. Bot ,  Michael C. Kwan ,  Mark Klare ,  Charles Thomas Larson

IPC: G01B15/02 ,  G01N23/2251 ,  G01N23/225 ,  G01N23/223 ,  G01N23/2273 ,  G01N23/22

Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.

公开(公告)号：US20200370885A1

公开(公告)日：2020-11-26

申请号：US16872568

申请日：2020-05-12

Applicant: NOVA MEASURING INSTRUMENTS, INC.

Inventor： Heath A. Pois ,  Wei Ti Lee ,  Lawrence V. Bot ,  Michael C. Kwan ,  Mark Klare ,  Charles Thomas Larson

IPC: G01B15/02 ,  G01N23/2251 ,  G01N23/225 ,  G01N23/223 ,  G01N23/2273

Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.

公开(公告)号：US11346795B2

公开(公告)日：2022-05-31

申请号：US16949041

申请日：2020-10-09

Applicant: NOVA MEASURING INSTRUMENTS, INC.

Inventor： Charles Thomas Larson ,  Kavita Shah ,  Wei Ti Lee

IPC: G01N23/2273 ,  H01L21/67 ,  C23C16/52 ,  C23C16/24 ,  C23C16/455 ,  C23C16/06

Abstract: XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.

公开(公告)号：US10801978B2

公开(公告)日：2020-10-13

申请号：US16351153

申请日：2019-03-12

Applicant: NOVA MEASURING INSTRUMENTS, INC.

Inventor： Charles Thomas Larson ,  Kavita Shah ,  Wei Ti Lee

IPC: G01N23/2273 ,  H01L21/67 ,  C23C16/52 ,  C23C16/24 ,  C23C16/455 ,  C23C16/06

Abstract: XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.

公开(公告)号：US20210025839A1

公开(公告)日：2021-01-28

申请号：US16949041

申请日：2020-10-09

Applicant: NOVA MEASURING INSTRUMENTS, INC.

Inventor： Charles Thomas Larson ,  Kavita Shah ,  Wei Ti Lee

IPC: G01N23/2273 ,  H01L21/67 ,  C23C16/52 ,  C23C16/24 ,  C23C16/455 ,  C23C16/06

Abstract: XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.

公开(公告)号：US10648802B2

公开(公告)日：2020-05-12

申请号：US16536132

申请日：2019-08-08

Applicant: NOVA MEASURING INSTRUMENTS, INC.

Inventor： Heath A. Pois ,  Wei Ti Lee ,  Lawrence V. Bot ,  Michael C. Kwan ,  Mark Klare ,  Charles Thomas Larson

IPC: G01B15/02 ,  G01N23/2251 ,  G01N23/225 ,  G01N23/223 ,  G01N23/2273 ,  G01N23/22

Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.

公开(公告)号：US20190277783A1

公开(公告)日：2019-09-12

申请号：US16351153

申请日：2019-03-12

Applicant: NOVA MEASURING INSTRUMENTS, INC.

Inventor： Charles Thomas Larson ,  Kavita Shah ,  Wei Ti Lee

IPC: G01N23/2273 ,  H01L21/67 ,  C23C16/06 ,  C23C16/24 ,  C23C16/455 ,  C23C16/52

Abstract: XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.