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公开(公告)号:US11733035B2
公开(公告)日:2023-08-22
申请号:US17303834
申请日:2021-06-08
Applicant: NOVA MEASURING INSTRUMENTS INC.
Inventor: Heath Pois , Wei T Lee , Lawrence Bot , Michael Kwan , Mark Klare , Charles Larson
IPC: G01B15/02 , G01N23/2251 , G01N23/225 , G01N23/223 , G01N23/2273 , G01N23/22
CPC classification number: G01B15/02 , G01N23/223 , G01N23/225 , G01N23/2251 , G01N23/2273 , G01N23/22
Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.
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2.
公开(公告)号:US20190033069A1
公开(公告)日:2019-01-31
申请号:US16140340
申请日:2018-09-24
Applicant: NOVA MEASURING INSTRUMENTS, INC.
Inventor: Heath A. Pois , Wei Ti Lee , Lawrence V. Bot , Michael C. Kwan , Mark Klare , Charles Thomas Larson
IPC: G01B15/02 , G01N23/2273 , G01N23/223
Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.
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公开(公告)号:US20180328871A1
公开(公告)日:2018-11-15
申请号:US15773145
申请日:2016-11-02
Applicant: Nova Measuring Instruments, Inc.
Inventor: Wei Ti Lee , Heath Pois , Mark Klare , Cornel Bozdog
IPC: G01N23/2273 , G01N23/2208 , G01B15/02
CPC classification number: G01N23/2273 , G01B11/06 , G01B15/02 , G01N23/2208 , G01N23/223 , G01N2223/305 , G01N2223/61 , G01N2223/633 , H01L22/12
Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).
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公开(公告)号:US20230408430A1
公开(公告)日:2023-12-21
申请号:US18206033
申请日:2023-06-05
Applicant: Nova Measuring Instruments, Inc.
Inventor: Wei Ti Lee , Heath Pois , Mark Klare , Cornel Bozdog
IPC: G01N23/2273 , H01L21/66 , G01B11/06 , G01B15/02 , G01N23/2208 , G01N23/223
CPC classification number: G01N23/2273 , H01L22/12 , G01B11/06 , G01B15/02 , G01N23/2208 , G01N23/223 , G01N2223/305 , G01N2223/633 , G01N2223/61
Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).
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公开(公告)号:US10648802B2
公开(公告)日:2020-05-12
申请号:US16536132
申请日:2019-08-08
Applicant: NOVA MEASURING INSTRUMENTS, INC.
Inventor: Heath A. Pois , Wei Ti Lee , Lawrence V. Bot , Michael C. Kwan , Mark Klare , Charles Thomas Larson
IPC: G01B15/02 , G01N23/2251 , G01N23/225 , G01N23/223 , G01N23/2273 , G01N23/22
Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.
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公开(公告)号:US10533961B2
公开(公告)日:2020-01-14
申请号:US15773145
申请日:2016-11-02
Applicant: Nova Measuring Instruments, Inc.
Inventor: Wei Ti Lee , Heath Pois , Mark Klare , Cornel Bozdog
IPC: G01N23/227 , G01N23/223 , G01N23/22 , G01N23/2273 , G01B11/06 , G01B15/02 , G01N23/2208
Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).
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公开(公告)号:US12066391B2
公开(公告)日:2024-08-20
申请号:US18206033
申请日:2023-06-05
Applicant: Nova Measuring Instruments, Inc.
Inventor: Wei Ti Lee , Heath Pois , Mark Klare , Cornel Bozdog
IPC: G01N23/223 , G01B11/06 , G01B15/02 , G01N23/2208 , G01N23/2273 , H01L21/66
CPC classification number: G01N23/2273 , G01B11/06 , G01B15/02 , G01N23/2208 , G01N23/223 , H01L22/12 , G01N2223/305 , G01N2223/61 , G01N2223/633
Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).
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公开(公告)号:US11668663B2
公开(公告)日:2023-06-06
申请号:US16741515
申请日:2020-01-13
Applicant: Nova Measuring Instruments, Inc.
Inventor: Wei Ti Lee , Heath Pois , Mark Klare , Cornel Bozdog
IPC: G01N23/223 , G01N23/2208 , G01B11/06 , G01B15/02 , G01N23/2273 , H01L21/66
CPC classification number: G01N23/2273 , G01B11/06 , G01B15/02 , G01N23/223 , G01N23/2208 , H01L22/12 , G01N2223/305 , G01N2223/61 , G01N2223/633
Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).
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公开(公告)号:US11029148B2
公开(公告)日:2021-06-08
申请号:US16872568
申请日:2020-05-12
Applicant: NOVA MEASURING INSTRUMENTS, INC.
Inventor: Heath A. Pois , Wei Ti Lee , Lawrence V. Bot , Michael C. Kwan , Mark Klare , Charles Thomas Larson
IPC: G01B15/02 , G01N23/2251 , G01N23/225 , G01N23/223 , G01N23/2273 , G01N23/22
Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.
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10.
公开(公告)号:US20200370885A1
公开(公告)日:2020-11-26
申请号:US16872568
申请日:2020-05-12
Applicant: NOVA MEASURING INSTRUMENTS, INC.
Inventor: Heath A. Pois , Wei Ti Lee , Lawrence V. Bot , Michael C. Kwan , Mark Klare , Charles Thomas Larson
IPC: G01B15/02 , G01N23/2251 , G01N23/225 , G01N23/223 , G01N23/2273
Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.
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