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公开(公告)号：US20230122494A1
公开(公告)日：2023-04-20
申请号：US18084327
申请日：2022-12-19
发明人： Katsuya SAMONJI , Hiroshi ASAKA
IPC分类号： H01S5/02 , H01S5/026 , B23K26/364
摘要： A method of manufacturing a semiconductor laser element includes: first dividing a substrate to produce a divided substrate including waveguides spaced apart in a second direction, the substrate being a substrate on which a nitride-based semiconductor laser stacking structure including waveguides extending in the first direction is formed; cleaving the divided substrate in the second direction to produce a semiconductor laser element including waveguides; and second dividing the semiconductor laser element in the first direction to remove an end portion of the semiconductor laser element in the second direction. The cleaving includes: forming, on the divided substrate, a cleavage lead-in groove extending in the second direction; and cleaving the divided substrate using the cleavage lead-in groove. In the second dividing, a portion including the cleavage lead-in groove is removed as the end portion of the semiconductor laser element in the second direction.
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公开(公告)号：US20210384701A1
公开(公告)日：2021-12-09
申请号：US17408998
申请日：2021-08-23
发明人： Masayuki ONO , Katsuya SAMONJI , Tohru NISHIKAWA , Hiroshi ASAKA , Mitsuru NISHITSUJI , Kazuya YAMADA
IPC分类号： H01S5/0234 , H01S5/22
摘要： A semiconductor laser apparatus includes: a semiconductor laser device for junction down mounting that includes a first light-emitting device region and a second light-emitting device region formed separately on a substrate. The first light-emitting device region and the second light-emitting device region in the semiconductor laser device each have a stack structure in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are stacked in stated order. The first light-emitting device region includes a first electrode film located on the n-type semiconductor layer. The second light-emitting device region includes a second electrode film located on the p-type semiconductor layer. The first electrode film and the second electrode film are electrically connected to each other.
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公开(公告)号：US20210384697A1
公开(公告)日：2021-12-09
申请号：US17410109
申请日：2021-08-24
发明人： Katsuya SAMONJI
IPC分类号： H01S5/00 , H01S5/0683 , H01S5/024 , H01S5/062
摘要： A light source device includes: a first optical element through which emission light emitted from each of semiconductor laser elements propagates; a first light receiver that receives first propagating light that has propagated through the first optical element; a laser driving controller that controls the semiconductor laser elements; and a measurement circuit that measures a first output value that indicates a received-light intensity of the first propagating light that has been received by the first light receiver. The first light receiver is disposed downstream of the first optical element. The laser driving controller drives the semiconductor laser elements by using a plurality of values of a driving current that are different from each other. The measurement circuit measures the first output value of the first propagating light received by first light receiver for each of the plurality of values of the driving current that are different from each other.
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公开(公告)号：US20210281038A1
公开(公告)日：2021-09-09
申请号：US17331128
申请日：2021-05-26
摘要： A semiconductor laser device includes: a semiconductor laminate body; an insulating layer disposed above the semiconductor laminate body and including a first opening extending in a first direction that is a direction from a front end surface toward a rear end surface; a first electrode disposed above the semiconductor laminate body; a second electrode disposed above the first electrode and the insulating layer; and an adhesion layer disposed between the second electrode and the insulating layer. The adhesion layer includes a second opening that at least partially overlaps with the first opening in plan view, the first electrode is at least partially disposed inside the first opening and the second opening, and the second electrode and the adhesion layer are disposed above the insulating layer between the first opening and at least one of the front end surface or the rear end surface.
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公开(公告)号：US20220393428A1
公开(公告)日：2022-12-08
申请号：US17889052
申请日：2022-08-16
发明人： Katsuya SAMONJI
摘要： A light source module that emits a combined laser beam, and includes: a plurality of semiconductor laser elements; and a control circuit that controls power of a laser beam emitted by each of the semiconductor laser elements. The semiconductor laser elements include: a first element group that emits a first laser beam; and a second element group that emits a second laser beam. The combined laser beam includes at least one of the first laser beam or the second laser beam. The control circuit maintains an average combined-beam wavelength that is an average wavelength of the combined laser beam constant for a change in power of the combined laser beam. When the power of the first laser beam and the power of the second laser beam are equal to each other, an average wavelength of the first laser beam is longer than an average wavelength of the second laser beam.
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公开(公告)号：US20210159663A1
公开(公告)日：2021-05-27
申请号：US17170630
申请日：2021-02-08
发明人： Katsuya SAMONJI , Tohru NISHIKAWA
IPC分类号： H01S5/02 , H01S5/024 , H01S5/0231
摘要： Semiconductor light-emitting apparatus includes substrate, submount above substrate, and semiconductor laser above submount. Semiconductor laser and submount are bonded to each other with first bonding material. Substrate and submount are bonded to each other with second bonding material. Submount has first region and second region near substrate, first region being a region on which spacer is disposed, and second region being a region without spacer. Submount is bonded to substrate by covering at least a portion of second region with second bonding material.
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