公开(公告)号：US20230054731A1

公开(公告)日：2023-02-23

申请号：US18045699

申请日：2022-10-11

申请人： Nuvoton Technology Corporation Japan

发明人： Tohru NISHIKAWA ,  Mitsuru NISHITSUJI ,  Kazuya YAMADA ,  Masayuki HATA

IPC分类号： H01S5/40 ,  H01S5/042

摘要： An array type semiconductor laser device includes: a second electrode (p-electrode) disposed on another conductivity type semiconductor layer; a third electrode (n-electrode) disposed on a one conductivity type semiconductor layer and between a first electrode (p-electrode) and the second electrode; a fifth electrode (n-electrode) disposed on the one conductivity type semiconductor layer and between the third electrode and the second electrode; a sixth electrode (n-electrode) disposed on the one conductivity type semiconductor layer and across from the fifth electrode; a first conductor (wire) that electrically connects the second electrode and the third electrode; and a second conductor (n-wiring) that electrically connects the fifth electrode and the sixth electrode.

公开(公告)号：US20220013987A1

公开(公告)日：2022-01-13

申请号：US17487405

申请日：2021-09-28

申请人： Nuvoton Technology Corporation Japan

发明人： Kazuya YAMADA ,  Tougo NAKATANI ,  Hiroki NAGAI ,  Masayuki HATA

IPC分类号： H01S5/16

摘要： A semiconductor laser element includes: a first conductivity-type cladding layer; a first guide layer disposed above the first conductivity-type cladding layer; an active layer disposed above the first guide layer; and a second conductivity-type cladding layer disposed above the active layer. A window region is formed in a region of the active layer including part of at least one of the front-side end face or the rear-side end face, the first conductivity-type cladding layer consists of (AlxGa1-x)0.5In0.5P, the first guide layer consists of (AlyGa1-y)0.5In0.5P, and the second conductivity-type cladding layer consists of (AlzGa1-z)0.5In0.5P, where x, y, and z each denote an Al composition ratio, 0 0.03 is satisfied, where L denotes a length of the resonator and D denotes a length of the window region in the first direction.

公开(公告)号：US20210384701A1

公开(公告)日：2021-12-09

申请号：US17408998

申请日：2021-08-23

申请人： NUVOTON TECHNOLOGY CORPORATION JAPAN

发明人： Masayuki ONO ,  Katsuya SAMONJI ,  Tohru NISHIKAWA ,  Hiroshi ASAKA ,  Mitsuru NISHITSUJI ,  Kazuya YAMADA

IPC分类号： H01S5/0234 ,  H01S5/22

摘要： A semiconductor laser apparatus includes: a semiconductor laser device for junction down mounting that includes a first light-emitting device region and a second light-emitting device region formed separately on a substrate. The first light-emitting device region and the second light-emitting device region in the semiconductor laser device each have a stack structure in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are stacked in stated order. The first light-emitting device region includes a first electrode film located on the n-type semiconductor layer. The second light-emitting device region includes a second electrode film located on the p-type semiconductor layer. The first electrode film and the second electrode film are electrically connected to each other.