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公开(公告)号：US20230054731A1
公开(公告)日：2023-02-23
申请号：US18045699
申请日：2022-10-11
摘要： An array type semiconductor laser device includes: a second electrode (p-electrode) disposed on another conductivity type semiconductor layer; a third electrode (n-electrode) disposed on a one conductivity type semiconductor layer and between a first electrode (p-electrode) and the second electrode; a fifth electrode (n-electrode) disposed on the one conductivity type semiconductor layer and between the third electrode and the second electrode; a sixth electrode (n-electrode) disposed on the one conductivity type semiconductor layer and across from the fifth electrode; a first conductor (wire) that electrically connects the second electrode and the third electrode; and a second conductor (n-wiring) that electrically connects the fifth electrode and the sixth electrode.
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公开(公告)号：US20210384701A1
公开(公告)日：2021-12-09
申请号：US17408998
申请日：2021-08-23
发明人： Masayuki ONO , Katsuya SAMONJI , Tohru NISHIKAWA , Hiroshi ASAKA , Mitsuru NISHITSUJI , Kazuya YAMADA
IPC分类号： H01S5/0234 , H01S5/22
摘要： A semiconductor laser apparatus includes: a semiconductor laser device for junction down mounting that includes a first light-emitting device region and a second light-emitting device region formed separately on a substrate. The first light-emitting device region and the second light-emitting device region in the semiconductor laser device each have a stack structure in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are stacked in stated order. The first light-emitting device region includes a first electrode film located on the n-type semiconductor layer. The second light-emitting device region includes a second electrode film located on the p-type semiconductor layer. The first electrode film and the second electrode film are electrically connected to each other.
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